JPS6464324A - Electrode for plasma etching - Google Patents

Electrode for plasma etching

Info

Publication number
JPS6464324A
JPS6464324A JP22028387A JP22028387A JPS6464324A JP S6464324 A JPS6464324 A JP S6464324A JP 22028387 A JP22028387 A JP 22028387A JP 22028387 A JP22028387 A JP 22028387A JP S6464324 A JPS6464324 A JP S6464324A
Authority
JP
Japan
Prior art keywords
film
base material
electrode
graphite base
si3n4
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22028387A
Other languages
Japanese (ja)
Inventor
Hiroaki Tanji
Kenji Kadota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denka Co Ltd
Original Assignee
Denki Kagaku Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denki Kagaku Kogyo KK filed Critical Denki Kagaku Kogyo KK
Priority to JP22028387A priority Critical patent/JPS6464324A/en
Publication of JPS6464324A publication Critical patent/JPS6464324A/en
Pending legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

PURPOSE:To remarkably prolong the life of an electrode and to improve production efficiency by forming a polycrystalline Si3N4 or AlN film on a graphite base material. CONSTITUTION:A high temperature thermal CVD method which utilizes heat and a thermal plasma CVD method which utilizes plasma with the previous CVD method are preferable as a method of forming a polycrystalline Si3N4 or AlN film. A polycrystalline Si3N4 or AlN protective film is general to precipitate it on a graphite base material formed in a desired electrode shape as an electrode, but after the protective film is formed on the graphite base material, it may be formed in the electrode shape. The graphite base material preferably has high density and high strength, and a rigid bonding strength is obtained by roughing the surface. The thickness of the film is preferably 5mum or more to form a continuously dense film and 500mum or less to prevent it from self- cracking or exfoliating due to an internal stress.
JP22028387A 1987-09-04 1987-09-04 Electrode for plasma etching Pending JPS6464324A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22028387A JPS6464324A (en) 1987-09-04 1987-09-04 Electrode for plasma etching

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22028387A JPS6464324A (en) 1987-09-04 1987-09-04 Electrode for plasma etching

Publications (1)

Publication Number Publication Date
JPS6464324A true JPS6464324A (en) 1989-03-10

Family

ID=16748744

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22028387A Pending JPS6464324A (en) 1987-09-04 1987-09-04 Electrode for plasma etching

Country Status (1)

Country Link
JP (1) JPS6464324A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03138381A (en) * 1989-10-20 1991-06-12 Ibiden Co Ltd Electrode plate for plasma etching
EP0595054A1 (en) * 1992-10-30 1994-05-04 Applied Materials, Inc. Method for processing semiconductor wafers at temperatures exceeding 400 degrees C.
JPH06163428A (en) * 1992-11-26 1994-06-10 Ngk Insulators Ltd Corrosion resistant material
JPH07153370A (en) * 1993-11-30 1995-06-16 Kyocera Corp Discharge tube
US5482749A (en) * 1993-06-28 1996-01-09 Applied Materials, Inc. Pretreatment process for treating aluminum-bearing surfaces of deposition chamber prior to deposition of tungsten silicide coating on substrate therein
US5510297A (en) * 1993-06-28 1996-04-23 Applied Materials, Inc. Process for uniform deposition of tungsten silicide on semiconductor wafers by treatment of susceptor having aluminum nitride surface thereon with tungsten silicide after cleaning of susceptor
US6090706A (en) * 1993-06-28 2000-07-18 Applied Materials, Inc. Preconditioning process for treating deposition chamber prior to deposition of tungsten silicide coating on active substrates therein

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58209111A (en) * 1982-05-31 1983-12-06 Toshiba Corp Plasma generator
JPS6116524A (en) * 1984-07-03 1986-01-24 Nec Corp Dry etching device
JPS61246382A (en) * 1985-04-24 1986-11-01 Nec Corp Dry etching device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58209111A (en) * 1982-05-31 1983-12-06 Toshiba Corp Plasma generator
JPS6116524A (en) * 1984-07-03 1986-01-24 Nec Corp Dry etching device
JPS61246382A (en) * 1985-04-24 1986-11-01 Nec Corp Dry etching device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03138381A (en) * 1989-10-20 1991-06-12 Ibiden Co Ltd Electrode plate for plasma etching
EP0595054A1 (en) * 1992-10-30 1994-05-04 Applied Materials, Inc. Method for processing semiconductor wafers at temperatures exceeding 400 degrees C.
JPH06163428A (en) * 1992-11-26 1994-06-10 Ngk Insulators Ltd Corrosion resistant material
US5482749A (en) * 1993-06-28 1996-01-09 Applied Materials, Inc. Pretreatment process for treating aluminum-bearing surfaces of deposition chamber prior to deposition of tungsten silicide coating on substrate therein
US5510297A (en) * 1993-06-28 1996-04-23 Applied Materials, Inc. Process for uniform deposition of tungsten silicide on semiconductor wafers by treatment of susceptor having aluminum nitride surface thereon with tungsten silicide after cleaning of susceptor
US6090706A (en) * 1993-06-28 2000-07-18 Applied Materials, Inc. Preconditioning process for treating deposition chamber prior to deposition of tungsten silicide coating on active substrates therein
JPH07153370A (en) * 1993-11-30 1995-06-16 Kyocera Corp Discharge tube

Similar Documents

Publication Publication Date Title
JPS6483529A (en) Production of glass forming mold
EP0846667A3 (en) Ceramic parts and a producing process thereof
EP0567124A3 (en) Bonding tool having diamond head and method of manufacturing the same
JPH0456765B2 (en)
CA2177012A1 (en) Segmented Substrate for Improved Arc-Jet Diamond Deposition
ATE77776T1 (en) PROCESS FOR PRODUCTION OF METALLIC PRODUCTS FROM POWDER BY HOT ISOSTATIC PRESSURE USING CERAMIC CORE.
JPS645026A (en) Bonding tool
JPS6464325A (en) Electrode for plasma etching
KR100476350B1 (en) Method for manufacturing electrode plate for plasma processing device
JPS6447019A (en) Glassy carbon coated susceptor
US5486263A (en) Etching a diamond body with a molten or partially molten metal
JPS6445792A (en) Production of article coated with pyrolytic boron nitride
JPS56130466A (en) Film forming method
JPS5214600A (en) Process for the production of a thin film of silicon carbide
Saljé et al. Material removal in grinding of advanced ceramics
JPS5727914A (en) Manufacture of thin silicon carbide film
JPS6414914A (en) Jig for manufacture of semiconductor
JPS56100512A (en) Elastic surface wave element and its production
SU1443685A1 (en) Method of producing electrodes of thermal emission energy converter
JPS6452053A (en) Production of superconducting ceramic body
JPS643097A (en) Substrate having high heat conductivity
JPS5721834A (en) Semiconductor substrate
JPS55149195A (en) Manufacture of silicon carbide substrate
JPS5681605A (en) Production of composite cutting body
JP2000290773A (en) Manufacturing method of bulk body by chemical vapor deposition