JPS6467968A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS6467968A JPS6467968A JP22505087A JP22505087A JPS6467968A JP S6467968 A JPS6467968 A JP S6467968A JP 22505087 A JP22505087 A JP 22505087A JP 22505087 A JP22505087 A JP 22505087A JP S6467968 A JPS6467968 A JP S6467968A
- Authority
- JP
- Japan
- Prior art keywords
- region
- type
- semiconductor device
- breakdown strength
- drain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To reduce the resistance of a second drain region and to obtain a high breakdown strength semiconductor device by forming a drain region on the same conductivity type second impurity diffused region. CONSTITUTION:A P-type source region 4, a P<+> type drain region 5, a P<-> type drain region 9 and a gate electrode 8 form a P-channel field effect transistor. Since the drain regions 5, 9 are formed on the same conductivity type P-well region 3, the resistance of the region 9 is reduced, and its mutual conductance is raised. On the other hand, since a thick oxide film 7 is provided, the electrode 8 and the region 6 are scarcely short-circuited therebetween. Since its breakdown strength is determined by the junction of an N-type well region 2 and a P-type well region 3, a semiconductor device having a high breakdown strength is obtained.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22505087A JPS6467968A (en) | 1987-09-08 | 1987-09-08 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22505087A JPS6467968A (en) | 1987-09-08 | 1987-09-08 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6467968A true JPS6467968A (en) | 1989-03-14 |
Family
ID=16823251
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22505087A Pending JPS6467968A (en) | 1987-09-08 | 1987-09-08 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6467968A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100359161B1 (en) * | 1999-12-31 | 2002-10-31 | 주식회사 하이닉스반도체 | A method for fabricating transistor of a semiconductor device |
-
1987
- 1987-09-08 JP JP22505087A patent/JPS6467968A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100359161B1 (en) * | 1999-12-31 | 2002-10-31 | 주식회사 하이닉스반도체 | A method for fabricating transistor of a semiconductor device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS6468970A (en) | Mos transistor | |
| JPS5493981A (en) | Semiconductor device | |
| GB1527095A (en) | Storage arrangements | |
| US4142197A (en) | Drain extensions for closed COS/MOS logic devices | |
| JPS55151363A (en) | Mos semiconductor device and fabricating method of the same | |
| JPS6439069A (en) | Field-effect transistor | |
| JPS645070A (en) | Vertical insulated gate field effect transistor | |
| JPS55121682A (en) | Field effect transistor | |
| KR880006787A (en) | Monolithic integrated circuit | |
| JPS5497384A (en) | Semiconductor device | |
| JPS5322378A (en) | Production of field effect transistor s | |
| JPS54101680A (en) | Semiconductor device | |
| JPS5685851A (en) | Complementary mos type semiconductor device | |
| JPS54132179A (en) | Complementary insulating gate field effect semiconductor device | |
| JPH0812917B2 (en) | Method of operating MIS transistor and MIS transistor | |
| JPS5612773A (en) | Silicon gate mos field-effect transistor | |
| JPS5615068A (en) | Semiconductor device and manufacture thereof | |
| JPS56126970A (en) | Mos field effect transistor and manufacture thereof | |
| JPS6423573A (en) | Semiconductor integrated circuit | |
| EP0097338A3 (en) | Reference voltage generating device | |
| JPS6428860A (en) | Semiconductor device and manufacture thereof | |
| JPS6476768A (en) | Semiconductor device and manufacture thereof | |
| JPS6457672A (en) | High breakdown voltage mos semiconductor device | |
| JPS5546585A (en) | Complementary insulated gate field effect semiconductor device | |
| EP0237029A3 (en) | A heterojunction field effect device operable at a high output current with a high withstand voltage |