JPS6467979A - Semiconductor photodetector - Google Patents

Semiconductor photodetector

Info

Publication number
JPS6467979A
JPS6467979A JP62225035A JP22503587A JPS6467979A JP S6467979 A JPS6467979 A JP S6467979A JP 62225035 A JP62225035 A JP 62225035A JP 22503587 A JP22503587 A JP 22503587A JP S6467979 A JPS6467979 A JP S6467979A
Authority
JP
Japan
Prior art keywords
light
region
electrodes
electrode
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62225035A
Other languages
Japanese (ja)
Inventor
Tetsuo Shiba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP62225035A priority Critical patent/JPS6467979A/en
Publication of JPS6467979A publication Critical patent/JPS6467979A/en
Pending legal-status Critical Current

Links

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To respond at a high speed by reducing the thickness of a light absorption layer of a section formed with electrodes as compared wit that of a region formed with no electrode. CONSTITUTION:An undoped GaAs light-absorbing layer 2 and Schottky electrodes 3, 4 are formed on a semi-insulating GaAs substrate 1. When the difference in thickness between a region provided with electrodes and the light- absorbing region with no electrode is represented by (d), the electric field in the latter region has a predetermined intensity given by the ratio of an applied bias to a distance between the electrodes up to the depth (d) in the region to which a light is not incident and on which no electrode is formed. Accordingly, when the difference (d) in thickness is selected to approx. 2mum to the same degree as the absorption length of the light, such as the light of 0.8mum, electron and hole pairs generated in the GaAs are all selected by the electric field having this predetermined intensity. Therefore, a slow component is not generated.
JP62225035A 1987-09-08 1987-09-08 Semiconductor photodetector Pending JPS6467979A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62225035A JPS6467979A (en) 1987-09-08 1987-09-08 Semiconductor photodetector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62225035A JPS6467979A (en) 1987-09-08 1987-09-08 Semiconductor photodetector

Publications (1)

Publication Number Publication Date
JPS6467979A true JPS6467979A (en) 1989-03-14

Family

ID=16823036

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62225035A Pending JPS6467979A (en) 1987-09-08 1987-09-08 Semiconductor photodetector

Country Status (1)

Country Link
JP (1) JPS6467979A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011179990A (en) * 2010-03-02 2011-09-15 Canon Inc Photoconductive element

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011179990A (en) * 2010-03-02 2011-09-15 Canon Inc Photoconductive element

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