JPS6473637A - Semiconductor integrated circuit device - Google Patents
Semiconductor integrated circuit deviceInfo
- Publication number
- JPS6473637A JPS6473637A JP62231607A JP23160787A JPS6473637A JP S6473637 A JPS6473637 A JP S6473637A JP 62231607 A JP62231607 A JP 62231607A JP 23160787 A JP23160787 A JP 23160787A JP S6473637 A JPS6473637 A JP S6473637A
- Authority
- JP
- Japan
- Prior art keywords
- wirings
- region
- integrated circuit
- circuit device
- semiconductor integrated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/90—Masterslice integrated circuits
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Abstract
PURPOSE:To shorten the delay time of wirings by so covering at least an electrode of an active element with an insulating film as to pass wirings of first layer on an unused active element in a semiconductor integrated circuit device having a gate array structure. CONSTITUTION:In a semiconductor integrated circuit device, the whole surface of the unused section of many transistor regions 1 on a semiconductor substrate 10 is covered with a low dielectric constant insulating film 3, wirings 4 of a first layer for connecting a first transistor region 1a to a third transistor region 1b can be linearly disposed on a transistor region 1c, and the region 1c becomes a wiring region substantially equal to the original wiring region 5. Accordingly, the electrode leads 2 of the regions 1a, 1b can be connected at the shortest distance by the wirings 4 of the first layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62231607A JPS6473637A (en) | 1987-09-14 | 1987-09-14 | Semiconductor integrated circuit device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62231607A JPS6473637A (en) | 1987-09-14 | 1987-09-14 | Semiconductor integrated circuit device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6473637A true JPS6473637A (en) | 1989-03-17 |
Family
ID=16926163
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62231607A Pending JPS6473637A (en) | 1987-09-14 | 1987-09-14 | Semiconductor integrated circuit device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6473637A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02209769A (en) * | 1989-02-09 | 1990-08-21 | Sony Corp | Master-slice type semiconductor integrated circuit device |
-
1987
- 1987-09-14 JP JP62231607A patent/JPS6473637A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02209769A (en) * | 1989-02-09 | 1990-08-21 | Sony Corp | Master-slice type semiconductor integrated circuit device |
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