JPS6468951A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6468951A JPS6468951A JP22573587A JP22573587A JPS6468951A JP S6468951 A JPS6468951 A JP S6468951A JP 22573587 A JP22573587 A JP 22573587A JP 22573587 A JP22573587 A JP 22573587A JP S6468951 A JPS6468951 A JP S6468951A
- Authority
- JP
- Japan
- Prior art keywords
- chamber
- heated
- vacuum
- gas
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000010438 heat treatment Methods 0.000 abstract 2
- 230000006866 deterioration Effects 0.000 abstract 1
- 239000006185 dispersion Substances 0.000 abstract 1
- 238000007789 sealing Methods 0.000 abstract 1
Abstract
PURPOSE:To prevent the deterioration of the quality of the half product of a semiconductor device, by alternately repeating supply and exhaustion of heated inactive gas into and out of a vacuum chamber. CONSTITUTION:A half product 1 of a semiconductor device is heated in a vacuum chamber 2. The inside of the chamber 2 is evacuated with a vacuum pump 3 into a vacuum state. The vacuum pump 3 is stopped at a reached vacuum value 5. At the same time, N2 gas, which is heated in a hot N2 feeding unit 4 is injected into the chamber 2 to a preset gas pressure 6. Thereafter, the inside of the chamber 2 is heated to a preset temperature 7. The half product 1 is heated and sealed. During the heating and sealing, the inside of the chamber 2 is evacuated again to the reached value 5. Then, the heated N2 gas is injected to the preset gas pressure 6. Thereafter, these steps are alternately repeated. The atmosphere in the chamber is agitated by the repetition of said heating and exhaustion, and dispersion in temperature is eliminated. In this way, baking is performed in the state of the perfect inactive gas atmosphere.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22573587A JPS6468951A (en) | 1987-09-09 | 1987-09-09 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22573587A JPS6468951A (en) | 1987-09-09 | 1987-09-09 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6468951A true JPS6468951A (en) | 1989-03-15 |
Family
ID=16834007
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22573587A Pending JPS6468951A (en) | 1987-09-09 | 1987-09-09 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6468951A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20000015593A (en) * | 1998-08-31 | 2000-03-15 | 김규현 | Curing method of liquid phase sealing material for semiconductor package |
| CN115059955A (en) * | 2022-05-26 | 2022-09-16 | 袁鸣 | Semiconductor temperature difference heat collection geothermal heater |
| CN117818196A (en) * | 2023-12-28 | 2024-04-05 | 林州致远电子科技有限公司 | A method for reducing the energy consumption of vacuum pump during operation of hot press |
-
1987
- 1987-09-09 JP JP22573587A patent/JPS6468951A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20000015593A (en) * | 1998-08-31 | 2000-03-15 | 김규현 | Curing method of liquid phase sealing material for semiconductor package |
| CN115059955A (en) * | 2022-05-26 | 2022-09-16 | 袁鸣 | Semiconductor temperature difference heat collection geothermal heater |
| CN115059955B (en) * | 2022-05-26 | 2025-05-27 | 袁鸣 | A semiconductor temperature difference collection geothermal heater |
| CN117818196A (en) * | 2023-12-28 | 2024-04-05 | 林州致远电子科技有限公司 | A method for reducing the energy consumption of vacuum pump during operation of hot press |
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