JPS6468976A - Manufacture of semiconductor radiation detector - Google Patents

Manufacture of semiconductor radiation detector

Info

Publication number
JPS6468976A
JPS6468976A JP62225983A JP22598387A JPS6468976A JP S6468976 A JPS6468976 A JP S6468976A JP 62225983 A JP62225983 A JP 62225983A JP 22598387 A JP22598387 A JP 22598387A JP S6468976 A JPS6468976 A JP S6468976A
Authority
JP
Japan
Prior art keywords
semiconductor substrate
radiation detector
silicon layer
manufacture
semiconductor radiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62225983A
Other languages
Japanese (ja)
Inventor
Yoshio Mito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP62225983A priority Critical patent/JPS6468976A/en
Publication of JPS6468976A publication Critical patent/JPS6468976A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To manufacture a semiconductor radiation detector in excellent SN ratio by a method wherein a high resistance semiconductor substrate and a low resistance semiconductor substrate are brought into contact with each other to be heat treated. CONSTITUTION:A P-type high resistance silicon layer 5 as a high resistance semiconductor substrate and an N-type low resistance silicon layer as a low resistance semiconductor substrate are cleaned up and then mirror surfaces thereof are brought into direct contact with each other and heat treated for one hour at 700 deg.C in an electric furnace to be formed into one body. The silicon layer 6 is selectively chemical-etched away in thickness of 5mum. Later, aluminum electrodes 7 are formed on the surface of both silicon layers 5, 6. In such a constitution, a PN junction type semiconductor radiation detector in excellent SN ratio can be easily manufactured.
JP62225983A 1987-09-09 1987-09-09 Manufacture of semiconductor radiation detector Pending JPS6468976A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62225983A JPS6468976A (en) 1987-09-09 1987-09-09 Manufacture of semiconductor radiation detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62225983A JPS6468976A (en) 1987-09-09 1987-09-09 Manufacture of semiconductor radiation detector

Publications (1)

Publication Number Publication Date
JPS6468976A true JPS6468976A (en) 1989-03-15

Family

ID=16837951

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62225983A Pending JPS6468976A (en) 1987-09-09 1987-09-09 Manufacture of semiconductor radiation detector

Country Status (1)

Country Link
JP (1) JPS6468976A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6581707B2 (en) * 2000-04-04 2003-06-24 Suzuki Motor Corporation Control apparatus for hybrid vehicle
JP2007136050A (en) * 2005-11-22 2007-06-07 National Univ Corp Shizuoka Univ X-ray detector array

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6581707B2 (en) * 2000-04-04 2003-06-24 Suzuki Motor Corporation Control apparatus for hybrid vehicle
JP2007136050A (en) * 2005-11-22 2007-06-07 National Univ Corp Shizuoka Univ X-ray detector array

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