JPS6473656A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS6473656A
JPS6473656A JP62230081A JP23008187A JPS6473656A JP S6473656 A JPS6473656 A JP S6473656A JP 62230081 A JP62230081 A JP 62230081A JP 23008187 A JP23008187 A JP 23008187A JP S6473656 A JPS6473656 A JP S6473656A
Authority
JP
Japan
Prior art keywords
electrode
film
patterned
insulating film
silicon nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62230081A
Other languages
Japanese (ja)
Inventor
Fumiyuki Ochiai
Shuji Tabuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP62230081A priority Critical patent/JPS6473656A/en
Publication of JPS6473656A publication Critical patent/JPS6473656A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/318—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor the storage electrode having multiple segments

Landscapes

  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To make it possible to increase a capacitance value of a capacitor by providing the following: a first electrode; a dielectric film covering the surface and the under surface of the first electrode; a second electrode formed to face the surface; and the under surface of the first electrode. CONSTITUTION:A field oxide film 2 is formed on a silicon substrate 2; a window is opened in a part of a diffusion layer 1a formed on the silicon substrate 1; a polysilicon film 3 to be used as a gate electrode of a transfer gate transistor and an insulating film 4 are formed. Then, a polysilicon film is formed on the whole surface of the insulating film 4 and is patterned to form an electrode A 5. Then, a silicon nitride film is formed on the surface of the electrode A 5 and is patterned to form an insulating film A 6. In succession, a polysilicon film is formed on the surface of the insulating film A 6 and is patterned to form an electrode B 7. A silicon nitride film is formed so as to cover this electrode B 7 completely; while the silicon nitride film on the side of the electrode B 7 is left, the silicon nitride film on the surface of the electrode A 5 is removed completely. Lastly, a polysilicon film is formed on the surface of an insulating film B 8 and the electrode B 7, and is patterned to form an electrode C 9.
JP62230081A 1987-09-14 1987-09-14 Semiconductor device Pending JPS6473656A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62230081A JPS6473656A (en) 1987-09-14 1987-09-14 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62230081A JPS6473656A (en) 1987-09-14 1987-09-14 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS6473656A true JPS6473656A (en) 1989-03-17

Family

ID=16902250

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62230081A Pending JPS6473656A (en) 1987-09-14 1987-09-14 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS6473656A (en)

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