JPS647464A - Ion implanting device - Google Patents

Ion implanting device

Info

Publication number
JPS647464A
JPS647464A JP62162863A JP16286387A JPS647464A JP S647464 A JPS647464 A JP S647464A JP 62162863 A JP62162863 A JP 62162863A JP 16286387 A JP16286387 A JP 16286387A JP S647464 A JPS647464 A JP S647464A
Authority
JP
Japan
Prior art keywords
acceleration
low
power source
implantation
low acceleration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62162863A
Other languages
Japanese (ja)
Inventor
Hajime Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP62162863A priority Critical patent/JPS647464A/en
Publication of JPS647464A publication Critical patent/JPS647464A/en
Pending legal-status Critical Current

Links

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  • Electron Sources, Ion Sources (AREA)

Abstract

PURPOSE:To enable a uniform implantation by providing a low acceleration power source, and applying a low acceleration voltage between an ion source and an acceleration electrode. CONSTITUTION:A low acceleration power source 15 is provided for enabling implantation of low acceleration area while parallel beam scanning electrodes (18, 20), (19, 21) comprising two pairs of electrode (X1, X2), (Y1, Y2) and a power source 22 for applying reverse phase voltage wave form to the electrodes (X1, X2), (Y1, Y2) are provided. It is thus possible to handle both low and high acceleration energy areas with one unit, and to form an implantation layer superior in uniformity in a face according to a parallel scanning system.
JP62162863A 1987-06-30 1987-06-30 Ion implanting device Pending JPS647464A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62162863A JPS647464A (en) 1987-06-30 1987-06-30 Ion implanting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62162863A JPS647464A (en) 1987-06-30 1987-06-30 Ion implanting device

Publications (1)

Publication Number Publication Date
JPS647464A true JPS647464A (en) 1989-01-11

Family

ID=15762690

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62162863A Pending JPS647464A (en) 1987-06-30 1987-06-30 Ion implanting device

Country Status (1)

Country Link
JP (1) JPS647464A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009272293A (en) * 2008-04-11 2009-11-19 Hitachi High-Technologies Corp Focused ion beam apparatus

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61239557A (en) * 1985-04-15 1986-10-24 Nissin Electric Co Ltd Ion implanting apparatus
JPS61263038A (en) * 1985-05-16 1986-11-21 Nissin Electric Co Ltd Ion implanting apparatus
JPS62122045A (en) * 1985-11-14 1987-06-03 Hitachi Ltd How to accelerate and decelerate charged particles

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61239557A (en) * 1985-04-15 1986-10-24 Nissin Electric Co Ltd Ion implanting apparatus
JPS61263038A (en) * 1985-05-16 1986-11-21 Nissin Electric Co Ltd Ion implanting apparatus
JPS62122045A (en) * 1985-11-14 1987-06-03 Hitachi Ltd How to accelerate and decelerate charged particles

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009272293A (en) * 2008-04-11 2009-11-19 Hitachi High-Technologies Corp Focused ion beam apparatus

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