JPS647526A - Manufacture of semiconductor element - Google Patents

Manufacture of semiconductor element

Info

Publication number
JPS647526A
JPS647526A JP16092487A JP16092487A JPS647526A JP S647526 A JPS647526 A JP S647526A JP 16092487 A JP16092487 A JP 16092487A JP 16092487 A JP16092487 A JP 16092487A JP S647526 A JPS647526 A JP S647526A
Authority
JP
Japan
Prior art keywords
ingaalasp
hbr
etched away
etching speed
semiconductor element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16092487A
Other languages
Japanese (ja)
Other versions
JP2680310B2 (en
Inventor
Kazuhiko Itaya
Yukio Watanabe
Masayuki Ishikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP62160924A priority Critical patent/JP2680310B2/en
Publication of JPS647526A publication Critical patent/JPS647526A/en
Application granted granted Critical
Publication of JP2680310B2 publication Critical patent/JP2680310B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Weting (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To enable InGaAlAsP to be etched away in excellent controllability by a method wherein InGaAlAsP is chemically etched away using an etchant containing Br2 or HBr or both. CONSTITUTION:A solution containing Br or HBr or both is used as an etchant In1-s-tGasAltAs1-uPu(0<=s, t, u>=1). When saturated water solution of liquid Br2 and HBr is used, if the ratio of Br to HBr is set up within the range of 1:60-1:5, sufficient etching speed subject to on dependence on the values of s, t, and u can be assured furthermore, if the etched at that time contains water and the voluminal ratio of Br to water using liquid Br2 is set up within the range of 1:6000-1:150, InGaAlAsP can be etched away at stable etching speed with no roughness on the etching surface. Through these procedures, InGaAlAsP can be etched away at stable etching speed with less dependence on s, t, and u to improve the characteristics of the semiconductor element.
JP62160924A 1987-06-30 1987-06-30 Method for manufacturing semiconductor device Expired - Fee Related JP2680310B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62160924A JP2680310B2 (en) 1987-06-30 1987-06-30 Method for manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62160924A JP2680310B2 (en) 1987-06-30 1987-06-30 Method for manufacturing semiconductor device

Publications (2)

Publication Number Publication Date
JPS647526A true JPS647526A (en) 1989-01-11
JP2680310B2 JP2680310B2 (en) 1997-11-19

Family

ID=15725223

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62160924A Expired - Fee Related JP2680310B2 (en) 1987-06-30 1987-06-30 Method for manufacturing semiconductor device

Country Status (1)

Country Link
JP (1) JP2680310B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02311034A (en) * 1989-05-26 1990-12-26 Toshiba Corp Digital communication system
JP2015070072A (en) * 2013-09-27 2015-04-13 Jx日鉱日石金属株式会社 Compound semiconductor element manufacturing method and etchant
JP2015512139A (en) * 2012-01-13 2015-04-23 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ Method for depositing a group III-V layer on a substrate

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61176122A (en) * 1985-01-31 1986-08-07 Fujitsu Ltd Manufacture of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61176122A (en) * 1985-01-31 1986-08-07 Fujitsu Ltd Manufacture of semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02311034A (en) * 1989-05-26 1990-12-26 Toshiba Corp Digital communication system
JP2015512139A (en) * 2012-01-13 2015-04-23 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ Method for depositing a group III-V layer on a substrate
JP2015070072A (en) * 2013-09-27 2015-04-13 Jx日鉱日石金属株式会社 Compound semiconductor element manufacturing method and etchant

Also Published As

Publication number Publication date
JP2680310B2 (en) 1997-11-19

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees