JPS6476046A - Pattern forming material - Google Patents

Pattern forming material

Info

Publication number
JPS6476046A
JPS6476046A JP23246887A JP23246887A JPS6476046A JP S6476046 A JPS6476046 A JP S6476046A JP 23246887 A JP23246887 A JP 23246887A JP 23246887 A JP23246887 A JP 23246887A JP S6476046 A JPS6476046 A JP S6476046A
Authority
JP
Japan
Prior art keywords
upper layer
layered structure
layer material
pattern forming
resolution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP23246887A
Other languages
Japanese (ja)
Other versions
JP2572073B2 (en
Inventor
Keiji Watanabe
Yasuhiro Yoneda
Kazumasa Saito
Shoji Shiba
Yoko Kawasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP62232468A priority Critical patent/JP2572073B2/en
Publication of JPS6476046A publication Critical patent/JPS6476046A/en
Application granted granted Critical
Publication of JP2572073B2 publication Critical patent/JP2572073B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Silicon Polymers (AREA)

Abstract

PURPOSE:To obtain an upper layer material for a two layered structure having high sensitivity, resolution, and resistance to oxygen plasma by constituting the upper layer material of a specified three-dimensional chiral siloxane. CONSTITUTION:The title pattern forming material consists of a tree-dimensional chiral silocane expressed by formula I. In formula I, R is a 1-4C alkyl group, 2-3C alkenyl group, cyclohexyl group, or a phenyl group; n is 4, 6, 8, 10 or 12. Polysilsesquioxane is utilized for a material for electron beam negative resist having two layered structure permitting formation of a pattern having always submicron dimension on a substrate having large difference of level. By this method, an upper layer material for a two layered structure resist having high sensitivity, resolution, and resistance to oxygen plasma is obtd.
JP62232468A 1987-09-18 1987-09-18 Pattern forming material Expired - Fee Related JP2572073B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62232468A JP2572073B2 (en) 1987-09-18 1987-09-18 Pattern forming material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62232468A JP2572073B2 (en) 1987-09-18 1987-09-18 Pattern forming material

Publications (2)

Publication Number Publication Date
JPS6476046A true JPS6476046A (en) 1989-03-22
JP2572073B2 JP2572073B2 (en) 1997-01-16

Family

ID=16939770

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62232468A Expired - Fee Related JP2572073B2 (en) 1987-09-18 1987-09-18 Pattern forming material

Country Status (1)

Country Link
JP (1) JP2572073B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2009069465A1 (en) * 2007-11-30 2011-04-14 昭和電工株式会社 Curable composition for transfer material and method for forming fine pattern using the composition

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI338701B (en) * 2002-09-30 2011-03-11 Nippon Steel Chemical Co Cage-type silsesquioxanes resin cotaining functional group and manufacture method thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60108841A (en) * 1983-11-18 1985-06-14 Mitsubishi Electric Corp Photosensitive heat resistant material
JPS60108842A (en) * 1983-11-18 1985-06-14 Mitsubishi Electric Corp Manufacture of semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60108841A (en) * 1983-11-18 1985-06-14 Mitsubishi Electric Corp Photosensitive heat resistant material
JPS60108842A (en) * 1983-11-18 1985-06-14 Mitsubishi Electric Corp Manufacture of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2009069465A1 (en) * 2007-11-30 2011-04-14 昭和電工株式会社 Curable composition for transfer material and method for forming fine pattern using the composition

Also Published As

Publication number Publication date
JP2572073B2 (en) 1997-01-16

Similar Documents

Publication Publication Date Title
JPS5711351A (en) Electrostatic copying machine
JPS57202537A (en) Resist composition for dry development
JPS54628A (en) Multiple copying method for electronic copying apparatus
JPS6476046A (en) Pattern forming material
JPS57168246A (en) Formation of negative pattern
JPS5683746A (en) Electrophotographic image forming member
JPS57167133A (en) Production for magnetic recording medium
TW356579B (en) Planar trenches
JPS57141642A (en) Formation of pattern
JPS643663A (en) Forming method for fine pattern
JPS54591A (en) Element isolating method
JPS5544813A (en) Printing method
JPS56115534A (en) Formation of pattern
JPS5773940A (en) Levelling method of insulation layer
JPS57141641A (en) Formation of positive pattern
JPS5382684A (en) Fluorocarbon cation exchance membrance having phosphorus-containing exchange groups and production thereof
JPS5314555A (en) Depositing method of impurity to silicon wafersa
JPS5299779A (en) Production of silicon mask for x-ray lithography
JPS5511347A (en) Manufacture of dielectric insulated separation substrate
JPS52130575A (en) Semiconductor device and its preparation
JPS6450420A (en) Alignment mark
JPS56112727A (en) Manufacture of x-ray mask
EP0371512A3 (en) Conducting material and method of fabrication thereof
JPS56125434A (en) Surface treatment of molded article
JPS6467918A (en) Formation of fine pattern

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees