JPS64761A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS64761A JPS64761A JP15569387A JP15569387A JPS64761A JP S64761 A JPS64761 A JP S64761A JP 15569387 A JP15569387 A JP 15569387A JP 15569387 A JP15569387 A JP 15569387A JP S64761 A JPS64761 A JP S64761A
- Authority
- JP
- Japan
- Prior art keywords
- side wall
- gate electrode
- metal
- source
- metal silicide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 239000002184 metal Substances 0.000 abstract 5
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical group [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 abstract 5
- 229910021332 silicide Inorganic materials 0.000 abstract 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 2
- 229910052593 corundum Inorganic materials 0.000 abstract 2
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Landscapes
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15569387A JPS64761A (en) | 1987-06-23 | 1987-06-23 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15569387A JPS64761A (en) | 1987-06-23 | 1987-06-23 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01761A JPH01761A (ja) | 1989-01-05 |
| JPS64761A true JPS64761A (en) | 1989-01-05 |
Family
ID=15611476
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15569387A Pending JPS64761A (en) | 1987-06-23 | 1987-06-23 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS64761A (ja) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5521411A (en) * | 1991-12-31 | 1996-05-28 | Sgs-Thomson Microelectronics, Inc. | Transistor spacer etch pinpoint structure |
| US5698883A (en) * | 1989-10-09 | 1997-12-16 | Kabushiki Kaisha Toshiba | MOS field effect transistor and method for manufacturing the same |
| US6724051B1 (en) * | 2000-10-05 | 2004-04-20 | Advanced Micro Devices, Inc. | Nickel silicide process using non-reactive spacer |
| US7428811B2 (en) | 2003-11-26 | 2008-09-30 | Isuzu Motors Limited | Torque converter |
-
1987
- 1987-06-23 JP JP15569387A patent/JPS64761A/ja active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5698883A (en) * | 1989-10-09 | 1997-12-16 | Kabushiki Kaisha Toshiba | MOS field effect transistor and method for manufacturing the same |
| US5521411A (en) * | 1991-12-31 | 1996-05-28 | Sgs-Thomson Microelectronics, Inc. | Transistor spacer etch pinpoint structure |
| US6724051B1 (en) * | 2000-10-05 | 2004-04-20 | Advanced Micro Devices, Inc. | Nickel silicide process using non-reactive spacer |
| US7428811B2 (en) | 2003-11-26 | 2008-09-30 | Isuzu Motors Limited | Torque converter |
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