JPS6476992A - Apparatus for growing single crystal - Google Patents

Apparatus for growing single crystal

Info

Publication number
JPS6476992A
JPS6476992A JP14102088A JP14102088A JPS6476992A JP S6476992 A JPS6476992 A JP S6476992A JP 14102088 A JP14102088 A JP 14102088A JP 14102088 A JP14102088 A JP 14102088A JP S6476992 A JPS6476992 A JP S6476992A
Authority
JP
Japan
Prior art keywords
crucible
single crystal
silicon
melt
susceptor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14102088A
Other languages
Japanese (ja)
Other versions
JP2560418B2 (en
Inventor
Michio Kida
Tateaki Sahira
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Metal Corp
Original Assignee
Mitsubishi Metal Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Metal Corp filed Critical Mitsubishi Metal Corp
Priority to JP63141020A priority Critical patent/JP2560418B2/en
Publication of JPS6476992A publication Critical patent/JPS6476992A/en
Application granted granted Critical
Publication of JP2560418B2 publication Critical patent/JP2560418B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE:To surely prevent deformation of upper and peripheral wall of a quartz crucible and prevent occurrence of trouble in pulling up a single crystal, by providing at least one reinforced ring in the crucible. CONSTITUTION:A double crucible 4 consisting of deep dish shaped outside crucible 16 and cylindrical inside crucible 18 is arranged and a resistance heater 20 is arranged in a susceptor arranged in a heat-insulating cylinder 10 housed in a furnace so as to surround the susceptor 12. Then a circular reinforced ring 24 having L-shaped peripheral cross section is mounted in the upper end of the crucible 18. A polycrystal silicon is packed into the crucible 14 and electricity is applied to the heater 20 and the silicon is melted to form the melt 42. Then the crucible 14 is rotated through a driving mechanism 30, shaft 28 and base 26 and simultaneously a seed crystal 38 is immersed into the melt 42 and pulled up while rotating in the reverse direction to rotation of the crucible and a single crystal 44 is grown in the order of neck part 44a, shoulder part 44b and cylindrical part 44c and simultaneously a silicon raw material 46 is fed into the crucible 16 through a feed pipe 40.
JP63141020A 1987-06-08 1988-06-08 Single crystal growing equipment Expired - Lifetime JP2560418B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63141020A JP2560418B2 (en) 1987-06-08 1988-06-08 Single crystal growing equipment

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP14245987 1987-06-08
JP62-142459 1987-06-08
JP63141020A JP2560418B2 (en) 1987-06-08 1988-06-08 Single crystal growing equipment

Publications (2)

Publication Number Publication Date
JPS6476992A true JPS6476992A (en) 1989-03-23
JP2560418B2 JP2560418B2 (en) 1996-12-04

Family

ID=26473368

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63141020A Expired - Lifetime JP2560418B2 (en) 1987-06-08 1988-06-08 Single crystal growing equipment

Country Status (1)

Country Link
JP (1) JP2560418B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02283693A (en) * 1989-04-26 1990-11-21 Nkk Corp Method and device for preparing silicon single crystal
DE4030551A1 (en) * 1989-09-29 1991-04-11 Osaka Titanium Silicon single crystal prodn. - by czochralski method with oxygen concn. controlled by varying crucible partition immersion depth
US7303629B2 (en) * 2004-05-28 2007-12-04 Sumco Corporation Apparatus for pulling single crystal
JP2012140277A (en) * 2010-12-28 2012-07-26 Japan Siper Quarts Corp Composite crucible and method for manufacturing the same
CN112144107A (en) * 2020-09-10 2020-12-29 徐州鑫晶半导体科技有限公司 Crystal Growth Furnace and Crystal Production Process

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5930794A (en) * 1982-08-09 1984-02-18 Toshiba Ceramics Co Ltd Melting crucible device for pulling up single crystal
JPS63166790A (en) * 1986-12-26 1988-07-09 Toshiba Ceramics Co Ltd Pulling up device for silicon single crystal
JPS63303886A (en) * 1987-06-02 1988-12-12 Sumitomo Heavy Ind Ltd Silicon oxide discharge device in single crystal pulling-up device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5930794A (en) * 1982-08-09 1984-02-18 Toshiba Ceramics Co Ltd Melting crucible device for pulling up single crystal
JPS63166790A (en) * 1986-12-26 1988-07-09 Toshiba Ceramics Co Ltd Pulling up device for silicon single crystal
JPS63303886A (en) * 1987-06-02 1988-12-12 Sumitomo Heavy Ind Ltd Silicon oxide discharge device in single crystal pulling-up device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02283693A (en) * 1989-04-26 1990-11-21 Nkk Corp Method and device for preparing silicon single crystal
DE4030551A1 (en) * 1989-09-29 1991-04-11 Osaka Titanium Silicon single crystal prodn. - by czochralski method with oxygen concn. controlled by varying crucible partition immersion depth
DE4030551C2 (en) * 1989-09-29 1992-12-17 Osaka Titanium Co. Ltd., Amagasaki, Hyogo, Jp
US5392729A (en) * 1989-09-29 1995-02-28 Osaka Titanium Co., Ltd. Method of producing silicon single crystal
US7303629B2 (en) * 2004-05-28 2007-12-04 Sumco Corporation Apparatus for pulling single crystal
JP2012140277A (en) * 2010-12-28 2012-07-26 Japan Siper Quarts Corp Composite crucible and method for manufacturing the same
CN112144107A (en) * 2020-09-10 2020-12-29 徐州鑫晶半导体科技有限公司 Crystal Growth Furnace and Crystal Production Process

Also Published As

Publication number Publication date
JP2560418B2 (en) 1996-12-04

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