JPS64773A - Photovoltaic element - Google Patents

Photovoltaic element

Info

Publication number
JPS64773A
JPS64773A JP63073894A JP7389488A JPS64773A JP S64773 A JPS64773 A JP S64773A JP 63073894 A JP63073894 A JP 63073894A JP 7389488 A JP7389488 A JP 7389488A JP S64773 A JPS64773 A JP S64773A
Authority
JP
Japan
Prior art keywords
type
thin film
laminated
type layers
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP63073894A
Other languages
Japanese (ja)
Other versions
JP2737111B2 (en
JPH01773A (en
Inventor
Katsumi Nakagawa
Isamu Shimizu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP63073894A priority Critical patent/JP2737111B2/en
Publication of JPH01773A publication Critical patent/JPH01773A/en
Publication of JPS64773A publication Critical patent/JPS64773A/en
Application granted granted Critical
Publication of JP2737111B2 publication Critical patent/JP2737111B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/18—Photovoltaic cells having only Schottky potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1692—Thin semiconductor films on metallic or insulating substrates the films including only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To improve an S/N ratio as an optical sensor, by determining the including amount of hydrogen in a thin film semiconductor layer in the range of a specified atom ratio with respect to a photovoltaic element, which is formed as laminated thin film semiconductors by repeated depositions, and decreasing a dark current. CONSTITUTION:In a PIN type photovoltaic element using silicon thin film semiconductors, the following structures are provided for P-type layers and/or N-type layers: a structure (P-type laminated thin film semiconductor), wherein P-type layers and I-type layers are laminated twice or more so that each layer is thinner than 100Angstrom ; and/or a structure (N-type laminated thin film semiconductor), wherein N-type layers and I-type layers are laminated twice or more so that each layer is thinner than 100Angstrom . The including amount of hydrogen atoms in each film is made to be 1 atom ratio or more and 10 atom ratio or less. On a substrate 1, on which Ag is evaporated, the N-type layers 2 and the I-type layers 3 are laminated three times so that each layer has a thickness of 50Angstrom . Thus an N-type laminated thin film semiconductor is formed. An I-type layer 4 is deposited. Then, the P-type layers 5 and the I-type layers 6 are laminated three times so that each layer has a thickness of 50Angstrom . Thus a P-type laminated thin film semiconductor is formed. Finally, a transparent conductor layer of an ITO thin film and a current collecting electrode are formed.
JP63073894A 1987-03-27 1988-03-28 Photovoltaic element and method for manufacturing the same Expired - Fee Related JP2737111B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63073894A JP2737111B2 (en) 1987-03-27 1988-03-28 Photovoltaic element and method for manufacturing the same

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP62-73626 1987-03-27
JP7362687 1987-03-27
JP63073894A JP2737111B2 (en) 1987-03-27 1988-03-28 Photovoltaic element and method for manufacturing the same

Publications (3)

Publication Number Publication Date
JPH01773A JPH01773A (en) 1989-01-05
JPS64773A true JPS64773A (en) 1989-01-05
JP2737111B2 JP2737111B2 (en) 1998-04-08

Family

ID=26414768

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63073894A Expired - Fee Related JP2737111B2 (en) 1987-03-27 1988-03-28 Photovoltaic element and method for manufacturing the same

Country Status (1)

Country Link
JP (1) JP2737111B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20130129930A (en) * 2010-10-06 2013-11-29 어플라이드 머티어리얼스, 인코포레이티드 Pecvd oxide-nitride and oxide-silicon stacks for 3d memory application

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59202673A (en) * 1983-04-27 1984-11-16 ア−ルシ−エ−　コ−ポレ−ション Superposed photodetector
JPS6233479A (en) * 1985-08-07 1987-02-13 Agency Of Ind Science & Technol solar cells

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59202673A (en) * 1983-04-27 1984-11-16 ア−ルシ−エ−　コ−ポレ−ション Superposed photodetector
JPS6233479A (en) * 1985-08-07 1987-02-13 Agency Of Ind Science & Technol solar cells

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20130129930A (en) * 2010-10-06 2013-11-29 어플라이드 머티어리얼스, 인코포레이티드 Pecvd oxide-nitride and oxide-silicon stacks for 3d memory application
JP2013546169A (en) * 2010-10-06 2013-12-26 アプライド マテリアルズ インコーポレイテッド PECVD oxide-nitride stack and oxide-silicon stack for 3D memory application

Also Published As

Publication number Publication date
JP2737111B2 (en) 1998-04-08

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees