JPS6477982A - Machining method of substrate - Google Patents

Machining method of substrate

Info

Publication number
JPS6477982A
JPS6477982A JP23540787A JP23540787A JPS6477982A JP S6477982 A JPS6477982 A JP S6477982A JP 23540787 A JP23540787 A JP 23540787A JP 23540787 A JP23540787 A JP 23540787A JP S6477982 A JPS6477982 A JP S6477982A
Authority
JP
Japan
Prior art keywords
substrate
recess part
layer
main surface
etched
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23540787A
Other languages
Japanese (ja)
Inventor
Katsumi Yagi
Kazuo Tabuchi
Yasuhiko Nomura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP23540787A priority Critical patent/JPS6477982A/en
Publication of JPS6477982A publication Critical patent/JPS6477982A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H01S5/0203—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0207—Substrates having a special shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To prevent the yield of sudden change in surface orientation, by providing a first step for forming a recess part in a substrate by a selective etching method, providing a second step for wet-etching the surface of the substrate and the inner surface of the recess part, and shaping the corner part of the recess part formed by the first step into the curved surface. CONSTITUTION:A resist film 14 having a hole 13 in one main surface of a substrate 11 is formed. One main surface of the substrate 11 is etched by using sulfuric acid based etching liquid. A recess part 12 having a rectangular cross section is formed. Then, the resist film 14 is removed. One main surface of the substrate 11 and the inner surface of the recess part 12 are etched again by using the same sulfuric acid based etching liquid. Then, a buffer layer 15, an N-type clad layer 16, a first light guide layer 17, an MQW active layer 18, a second light guide layer 19, a P-type clad layer 20 and a cap layer 21 are sequentially laminated. Finally, a part other than the grown layers 15-21 directly over a bottom surface 12a of the recess part is etched away. Thus a mesa type semiconductor laser 22 is formed. In this way, the life of the semiconductor laser formed in the recess part, which is formed in the substrate, is made long.
JP23540787A 1987-09-18 1987-09-18 Machining method of substrate Pending JPS6477982A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23540787A JPS6477982A (en) 1987-09-18 1987-09-18 Machining method of substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23540787A JPS6477982A (en) 1987-09-18 1987-09-18 Machining method of substrate

Publications (1)

Publication Number Publication Date
JPS6477982A true JPS6477982A (en) 1989-03-23

Family

ID=16985636

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23540787A Pending JPS6477982A (en) 1987-09-18 1987-09-18 Machining method of substrate

Country Status (1)

Country Link
JP (1) JPS6477982A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002134820A (en) * 2000-10-27 2002-05-10 Oki Electric Ind Co Ltd Semiconductor laser

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60245187A (en) * 1984-05-19 1985-12-04 Fujitsu Ltd Manufacture of semiconductor device
JPS6441293A (en) * 1987-08-07 1989-02-13 Nec Corp Manufacture of substrate for optoelectronic integrated circuit

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60245187A (en) * 1984-05-19 1985-12-04 Fujitsu Ltd Manufacture of semiconductor device
JPS6441293A (en) * 1987-08-07 1989-02-13 Nec Corp Manufacture of substrate for optoelectronic integrated circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002134820A (en) * 2000-10-27 2002-05-10 Oki Electric Ind Co Ltd Semiconductor laser

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