JPS6457712A - Vapor growth device - Google Patents

Vapor growth device

Info

Publication number
JPS6457712A
JPS6457712A JP21578487A JP21578487A JPS6457712A JP S6457712 A JPS6457712 A JP S6457712A JP 21578487 A JP21578487 A JP 21578487A JP 21578487 A JP21578487 A JP 21578487A JP S6457712 A JPS6457712 A JP S6457712A
Authority
JP
Japan
Prior art keywords
gas
susceptor
source
control bodies
flow control
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21578487A
Other languages
Japanese (ja)
Inventor
Kaoru Ikegami
Junichi Sakamoto
Eiryo Takasuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Steel Corp
Original Assignee
Sumitomo Metal Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Metal Industries Ltd filed Critical Sumitomo Metal Industries Ltd
Priority to JP21578487A priority Critical patent/JPS6457712A/en
Publication of JPS6457712A publication Critical patent/JPS6457712A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To form a uniform thin-film, and to improve operating efficiency by mounting gas-flow control bodies being radially extended in the radial direction of a susceptor and supplying a sample with a source gas in a relative concentric rotatable manner to the susceptor on the sample holding side of the susceptor and narrowing source-gas flowing spaces in the control bodies toward the outside diameter side of the susceptor. CONSTITUTION:Source-gas flowing spaces in gas-flow control bodies 8 are supplied with an silicon source gas by using a source-gas supply pipe 7 while the inside of a reaction vessel 1 is fed with a purge gas by employing a purge-gas supply pipe 9, and the silicon source gas is controlled and guided by the gas-flow control bodies 8. When a susceptor 6 on which samples A, A... are placed is turned while lighting lamps 10, silicon thin-films are formed onto the surfaces of the samples A, A... The gas-flow control bodies 8 constitute source-gas flowing sections 8B, 8B... extended radially in the radial direction of the susceptor 6 to the four quarters from a central section 8A. Each source-gas flowing section 8B is unified respectively by combining a pair of parallel side plates 8a, 8a extended in the radial direction of the susceptor 6 and a top plate 8b, height of which is lowered toward the outside diameter side of the susceptor 6.
JP21578487A 1987-08-28 1987-08-28 Vapor growth device Pending JPS6457712A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21578487A JPS6457712A (en) 1987-08-28 1987-08-28 Vapor growth device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21578487A JPS6457712A (en) 1987-08-28 1987-08-28 Vapor growth device

Publications (1)

Publication Number Publication Date
JPS6457712A true JPS6457712A (en) 1989-03-06

Family

ID=16678174

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21578487A Pending JPS6457712A (en) 1987-08-28 1987-08-28 Vapor growth device

Country Status (1)

Country Link
JP (1) JPS6457712A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100804169B1 (en) * 2005-12-31 2008-02-18 주식회사 아이피에스 Susceptor for Thin Film Deposition Chamber
JP2008524842A (en) * 2004-12-16 2008-07-10 株式会社フュージョンエード Thin film deposition apparatus and method
CN101818333A (en) * 2009-02-26 2010-09-01 日本派欧尼株式会社 The epitaxially growing equipment of III group-III nitride semiconductor
JP2011124384A (en) * 2009-12-10 2011-06-23 Tokyo Electron Ltd Film deposition apparatus
JP2013042008A (en) * 2011-08-17 2013-02-28 Tokyo Electron Ltd Deposition apparatus
JP2014192501A (en) * 2013-03-28 2014-10-06 Tokyo Electron Ltd Film forming device

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008524842A (en) * 2004-12-16 2008-07-10 株式会社フュージョンエード Thin film deposition apparatus and method
KR100804169B1 (en) * 2005-12-31 2008-02-18 주식회사 아이피에스 Susceptor for Thin Film Deposition Chamber
CN101818333A (en) * 2009-02-26 2010-09-01 日本派欧尼株式会社 The epitaxially growing equipment of III group-III nitride semiconductor
JP2010232624A (en) * 2009-02-26 2010-10-14 Japan Pionics Co Ltd III-nitride semiconductor vapor phase growth system
JP2011124384A (en) * 2009-12-10 2011-06-23 Tokyo Electron Ltd Film deposition apparatus
JP2013042008A (en) * 2011-08-17 2013-02-28 Tokyo Electron Ltd Deposition apparatus
US9062373B2 (en) 2011-08-17 2015-06-23 Tokyo Electron Limited Film deposition apparatus
TWI505358B (en) * 2011-08-17 2015-10-21 東京威力科創股份有限公司 Film deposition apparatus
JP2014192501A (en) * 2013-03-28 2014-10-06 Tokyo Electron Ltd Film forming device

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