JPS6484672A - Photoelectric conversion device - Google Patents
Photoelectric conversion deviceInfo
- Publication number
- JPS6484672A JPS6484672A JP62240846A JP24084687A JPS6484672A JP S6484672 A JPS6484672 A JP S6484672A JP 62240846 A JP62240846 A JP 62240846A JP 24084687 A JP24084687 A JP 24084687A JP S6484672 A JPS6484672 A JP S6484672A
- Authority
- JP
- Japan
- Prior art keywords
- film
- silicon film
- deposited
- band gap
- crystallite
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006243 chemical reaction Methods 0.000 title 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 3
- 229910052710 silicon Inorganic materials 0.000 abstract 3
- 239000010703 silicon Substances 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 2
- 239000013078 crystal Substances 0.000 abstract 1
- 230000000694 effects Effects 0.000 abstract 1
- 230000001747 exhibiting effect Effects 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 230000037230 mobility Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Abstract
PURPOSE:To improve the responsibility of the device to light by providing a first semiconductor film which demonstrates a photoelectric effect, having a band gap greater than that of a second semiconductor material exhibiting the mobilities of electrons and holes than those of the former. CONSTITUTION:A tungstene film is deposited on a glass substrate 7 and etched to form a planar electrode 8. A fine crystal silicon film 9 is deposited on the electrode 8. The crystallite silicon film 9 is oxidized to form a thin silicon oxide film 10. An amorphous silicon film 11 is deposited on the thin silicon oxide film 10. Here, a band gap of the amorphous silicon film is made greater than that of the crystallite silicon film 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62240846A JPS6484672A (en) | 1987-09-28 | 1987-09-28 | Photoelectric conversion device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62240846A JPS6484672A (en) | 1987-09-28 | 1987-09-28 | Photoelectric conversion device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6484672A true JPS6484672A (en) | 1989-03-29 |
Family
ID=17065577
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62240846A Pending JPS6484672A (en) | 1987-09-28 | 1987-09-28 | Photoelectric conversion device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6484672A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04226084A (en) * | 1990-05-23 | 1992-08-14 | Mitsubishi Electric Corp | Solar cell and its manufacture |
| WO2007074683A1 (en) * | 2005-12-26 | 2007-07-05 | Kaneka Corporation | Stacked photoelectric transducer |
| JP2014027001A (en) * | 2012-07-24 | 2014-02-06 | Toyota Gakuen | Photoelectric conversion element |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59138372A (en) * | 1983-01-27 | 1984-08-08 | Canon Inc | Photo sensor |
| JPS6042877A (en) * | 1983-08-17 | 1985-03-07 | Mitsubishi Electric Corp | Photo receiving element |
| JPS60239072A (en) * | 1984-05-11 | 1985-11-27 | Ricoh Co Ltd | Photosensor |
| JPS617670A (en) * | 1984-06-22 | 1986-01-14 | Ricoh Co Ltd | Photoelectric conversion film |
| JPS6184859A (en) * | 1984-10-02 | 1986-04-30 | Matsushita Electric Ind Co Ltd | light detection device |
-
1987
- 1987-09-28 JP JP62240846A patent/JPS6484672A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59138372A (en) * | 1983-01-27 | 1984-08-08 | Canon Inc | Photo sensor |
| JPS6042877A (en) * | 1983-08-17 | 1985-03-07 | Mitsubishi Electric Corp | Photo receiving element |
| JPS60239072A (en) * | 1984-05-11 | 1985-11-27 | Ricoh Co Ltd | Photosensor |
| JPS617670A (en) * | 1984-06-22 | 1986-01-14 | Ricoh Co Ltd | Photoelectric conversion film |
| JPS6184859A (en) * | 1984-10-02 | 1986-04-30 | Matsushita Electric Ind Co Ltd | light detection device |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04226084A (en) * | 1990-05-23 | 1992-08-14 | Mitsubishi Electric Corp | Solar cell and its manufacture |
| WO2007074683A1 (en) * | 2005-12-26 | 2007-07-05 | Kaneka Corporation | Stacked photoelectric transducer |
| US7851695B2 (en) | 2005-12-26 | 2010-12-14 | Kaneka Corporation | Stacked-type photoelectric conversion device |
| JP2014027001A (en) * | 2012-07-24 | 2014-02-06 | Toyota Gakuen | Photoelectric conversion element |
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