JPS53143183A - Semicondutor integrated circuit device and production of the same - Google Patents

Semicondutor integrated circuit device and production of the same

Info

Publication number
JPS53143183A
JPS53143183A JP5770677A JP5770677A JPS53143183A JP S53143183 A JPS53143183 A JP S53143183A JP 5770677 A JP5770677 A JP 5770677A JP 5770677 A JP5770677 A JP 5770677A JP S53143183 A JPS53143183 A JP S53143183A
Authority
JP
Japan
Prior art keywords
production
same
integrated circuit
circuit device
semicondutor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5770677A
Other languages
Japanese (ja)
Inventor
Kaoru Niino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP5770677A priority Critical patent/JPS53143183A/en
Publication of JPS53143183A publication Critical patent/JPS53143183A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To produce a CJ type FET device by selectively forming p layer and n layer on one main surface of a substrate respectively through epitaxial growth.
JP5770677A 1977-05-20 1977-05-20 Semicondutor integrated circuit device and production of the same Pending JPS53143183A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5770677A JPS53143183A (en) 1977-05-20 1977-05-20 Semicondutor integrated circuit device and production of the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5770677A JPS53143183A (en) 1977-05-20 1977-05-20 Semicondutor integrated circuit device and production of the same

Publications (1)

Publication Number Publication Date
JPS53143183A true JPS53143183A (en) 1978-12-13

Family

ID=13063377

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5770677A Pending JPS53143183A (en) 1977-05-20 1977-05-20 Semicondutor integrated circuit device and production of the same

Country Status (1)

Country Link
JP (1) JPS53143183A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005098964A1 (en) * 2004-04-08 2005-10-20 Austriamicrosystems Ag High voltage depletion layer field effect transistor

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5025181A (en) * 1973-02-26 1975-03-17
JPS5244188A (en) * 1975-10-06 1977-04-06 Hitachi Ltd Semiconductor integrated circuit and process for production of the sam e
JPS5253678A (en) * 1975-10-29 1977-04-30 Hitachi Ltd Semiconductor integrated circuit and productin of the same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5025181A (en) * 1973-02-26 1975-03-17
JPS5244188A (en) * 1975-10-06 1977-04-06 Hitachi Ltd Semiconductor integrated circuit and process for production of the sam e
JPS5253678A (en) * 1975-10-29 1977-04-30 Hitachi Ltd Semiconductor integrated circuit and productin of the same

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005098964A1 (en) * 2004-04-08 2005-10-20 Austriamicrosystems Ag High voltage depletion layer field effect transistor
KR100962233B1 (en) 2004-04-08 2010-06-11 오스트리아마이크로시스템즈 아게 High Voltage Junction Field Effect Transistor
US7781809B2 (en) 2004-04-08 2010-08-24 Austriamicrosystems Ag High voltage depletion layer field effect transistor
DE102004018153B4 (en) * 2004-04-08 2012-06-14 Austriamicrosystems Ag High-voltage junction field-effect transistor with retrograde gate well and method for its production
DE102004018153B9 (en) * 2004-04-08 2012-08-23 Austriamicrosystems Ag High-voltage junction field-effect transistor with retrograde gate well and method for its production

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