JPS6486576A - Integrated circuit - Google Patents
Integrated circuitInfo
- Publication number
- JPS6486576A JPS6486576A JP63089054A JP8905488A JPS6486576A JP S6486576 A JPS6486576 A JP S6486576A JP 63089054 A JP63089054 A JP 63089054A JP 8905488 A JP8905488 A JP 8905488A JP S6486576 A JPS6486576 A JP S6486576A
- Authority
- JP
- Japan
- Prior art keywords
- integrated circuit
- josephson
- josephson element
- substrate
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 4
- 239000004065 semiconductor Substances 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000001816 cooling Methods 0.000 abstract 2
- 239000007788 liquid Substances 0.000 abstract 2
- 229910052757 nitrogen Inorganic materials 0.000 abstract 2
- 229910002480 Cu-O Inorganic materials 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Landscapes
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To obtain a hybrid integrated circuit wherein a semi-conductor element integrated circuit and Josephson element integrated circuit are mounted on the same device, by preparing a semiconductor element integrated circuit and Josephson element integrated circuit which can operate in an atmosphere of the same temperature on the same substrate. CONSTITUTION:MOS integrated circuit is covered with SiO2 film 17, which is formed in an flatting process, and used as a substrate for Josephson element integrated circuit. The Josephson element integrated circuit is formed on the substrate 17 after formation of MOS' integrated circuit. The ground face 8 of the Josephson element is formed of a quternary compound material of Ba- Y-Cu-O, which exhibits superconductivity at high temperature higher than that of liquid nitrogen. The present integrated circuit is provided with Josephson element circuit normally operable at high temperature higher than liquid nitrogen on the same substrate together with semi-conductor circuit. Consequently it is sufficient to have the cooling temperature of about 77K, and cooling at about 77K enables approximately correct LDD resistance value it only LDD temperature is kept at about 4X10<13>cm<-2>. Thus in the present integrated circuit, Josephson elements and semiconductor elements are both normally actuated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63089054A JPS6486576A (en) | 1987-04-13 | 1988-04-13 | Integrated circuit |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8880587 | 1987-04-13 | ||
| JP63089054A JPS6486576A (en) | 1987-04-13 | 1988-04-13 | Integrated circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6486576A true JPS6486576A (en) | 1989-03-31 |
Family
ID=26430144
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63089054A Pending JPS6486576A (en) | 1987-04-13 | 1988-04-13 | Integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6486576A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02298086A (en) * | 1989-05-12 | 1990-12-10 | Matsushita Electric Ind Co Ltd | Manufacture of superconductive device |
| JP2006066783A (en) * | 2004-08-30 | 2006-03-09 | Fujitsu Ltd | Superconducting circuit device and manufacturing method thereof |
-
1988
- 1988-04-13 JP JP63089054A patent/JPS6486576A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02298086A (en) * | 1989-05-12 | 1990-12-10 | Matsushita Electric Ind Co Ltd | Manufacture of superconductive device |
| JP2006066783A (en) * | 2004-08-30 | 2006-03-09 | Fujitsu Ltd | Superconducting circuit device and manufacturing method thereof |
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