JPS648752U - - Google Patents
Info
- Publication number
- JPS648752U JPS648752U JP10369887U JP10369887U JPS648752U JP S648752 U JPS648752 U JP S648752U JP 10369887 U JP10369887 U JP 10369887U JP 10369887 U JP10369887 U JP 10369887U JP S648752 U JPS648752 U JP S648752U
- Authority
- JP
- Japan
- Prior art keywords
- terminal
- source
- electrode
- drain
- connection portion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/075—Connecting or disconnecting of bond wires
- H10W72/07551—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting
- H10W72/07554—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting changes in dispositions
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Description
第1図aはこの考案の第1の実施例を説明する
ための回路図、第1図bはその構成を示す側面図
、第1図cはこの考案の第2の実施例を説明する
ための回路図、第1図dはその構成を示す側面図
、第2図aは従来のこの種の複合半導体装置の回
路図、第2図bはその構成を示す平面図、第2図
cはその側面図である。
1……金属基板、7……切欠部、Q1〜Qn…
…MOS FETチツプ、S……ソース端子、D
……ドレイン端子、G……ゲート端子、F……フ
ライホイール・ダイオード。
Figure 1a is a circuit diagram for explaining the first embodiment of this invention, Figure 1b is a side view showing its configuration, and Figure 1c is for explaining the second embodiment of this invention. 1d is a side view showing its structure, FIG. 2a is a circuit diagram of a conventional composite semiconductor device of this type, FIG. 2b is a plan view showing its structure, and FIG. 2c is a side view showing its structure. FIG. 1...Metal substrate, 7...Notch, Q1 to Qn ...
...MOS FET chip, S...source terminal, D
...Drain terminal, G...Gate terminal, F...Flywheel diode.
Claims (1)
FETチツプが固着され、ドレン電極、ソース電
極およびゲート電極のそれぞれが外部導出用のド
レン端子、ソース端子およびゲート端子に接続さ
れMOS FETチツプが並列接続されるととも
に、ドレイン端子−ソース端子間にフライホイー
ル・ダイオードを備えた複合半導体装置において
、前記ソース端子の外部接続部から前記フライホ
イール・ダイオードのアノード側に至る最短電流
経路内に、前記ソース電極の接続部が存在しない
ことを特徴とする複合半導体装置。 Multiple MOS on a metal substrate via an insulating layer
The FET chip is fixed, and the drain electrode, source electrode, and gate electrode are each connected to the drain terminal, source terminal, and gate terminal for external conduction, and the MOS FET chips are connected in parallel, and a fly is connected between the drain terminal and the source terminal. A composite semiconductor device including a wheel diode, characterized in that the connection portion of the source electrode does not exist within the shortest current path from the external connection portion of the source terminal to the anode side of the flywheel diode. Semiconductor equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10369887U JPH0526767Y2 (en) | 1987-07-07 | 1987-07-07 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10369887U JPH0526767Y2 (en) | 1987-07-07 | 1987-07-07 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS648752U true JPS648752U (en) | 1989-01-18 |
| JPH0526767Y2 JPH0526767Y2 (en) | 1993-07-07 |
Family
ID=31334762
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10369887U Expired - Lifetime JPH0526767Y2 (en) | 1987-07-07 | 1987-07-07 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0526767Y2 (en) |
-
1987
- 1987-07-07 JP JP10369887U patent/JPH0526767Y2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0526767Y2 (en) | 1993-07-07 |
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