JPS648763U - - Google Patents
Info
- Publication number
- JPS648763U JPS648763U JP1987101849U JP10184987U JPS648763U JP S648763 U JPS648763 U JP S648763U JP 1987101849 U JP1987101849 U JP 1987101849U JP 10184987 U JP10184987 U JP 10184987U JP S648763 U JPS648763 U JP S648763U
- Authority
- JP
- Japan
- Prior art keywords
- magnetoresistive
- magnetoresistive element
- utility
- insulating substrate
- scope
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- 229920001721 polyimide Polymers 0.000 claims 1
- 239000010408 film Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Measuring Magnetic Variables (AREA)
- Hall/Mr Elements (AREA)
Description
第１図は本考案による磁気抵抗素子の一実施例
を示す要部平面図、第２図、第３図および第４図
は第１図の要部平面図、第５図ａ，ｂ，ｃは従来
の磁気抵抗素子を説明する図である。
２１……セラミツク基板、２２……ガラス層、
２３……ＳｉＯ２膜、２４……強磁性体薄膜パタ
ーン、２４ａ……配線部、２４ｂ……電極部、２
５……配線パターン、２５ａ……導電部、２６，
２６Ｐ１，２６Ｐ２，２６Ｐ３，２６Ｐ４……ボ
ンデイングパツド、２７，２７ＲＭ１，２７ＲＭ
２，２７ＲＭ３，２７ＲＭ４，２７ＲＭ５，２７
ＲＭ６，２７ＲＭ７，２７ＲＭ８……磁気抵抗体
、２８……保護膜、２９……リード、３０……半
田。
Fig. 1 is a plan view of the main part showing one embodiment of the magnetoresistive element according to the present invention, Figs. 2, 3 and 4 are plan views of the main part of Fig. 1, and Figs. 5 a, b, c. FIG. 2 is a diagram illustrating a conventional magnetoresistive element. 21... Ceramic substrate, 22... Glass layer,
23... SiO 2 film, 24... Ferromagnetic thin film pattern, 24a... Wiring section, 24b... Electrode section, 2
5... Wiring pattern, 25a... Conductive part, 26,
26P 1 , 26P 2 , 26P 3 , 26P 4 ... bonding pad, 27, 27RM 1 , 27RM
2 , 27RM 3 , 27RM 4 , 27RM 5 , 27
RM 6 , 27RM 7 , 27RM 8 ... Magnetoresistive material, 28 ... Protective film, 29 ... Lead, 30 ... Solder.
Claims (1)
低温熱処理型ポリイミド膜を形成したことを特徴
とする磁気抵抗素子。 A magnetoresistive element characterized in that a low-temperature heat-treated polyimide film is formed on an insulating substrate on which a magnetoresistive material is formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1987101849U JPS648763U (en) | 1987-07-03 | 1987-07-03 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1987101849U JPS648763U (en) | 1987-07-03 | 1987-07-03 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS648763U true JPS648763U (en) | 1989-01-18 |
Family
ID=31331215
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1987101849U Pending JPS648763U (en) | 1987-07-03 | 1987-07-03 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS648763U (en) |
-
1987
- 1987-07-03 JP JP1987101849U patent/JPS648763U/ja active Pending