JPS6489334A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS6489334A
JPS6489334A JP62247169A JP24716987A JPS6489334A JP S6489334 A JPS6489334 A JP S6489334A JP 62247169 A JP62247169 A JP 62247169A JP 24716987 A JP24716987 A JP 24716987A JP S6489334 A JPS6489334 A JP S6489334A
Authority
JP
Japan
Prior art keywords
pad
aluminum
wiring
polycrystalline
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62247169A
Other languages
Japanese (ja)
Inventor
Masahiro Kawamata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62247169A priority Critical patent/JPS6489334A/en
Publication of JPS6489334A publication Critical patent/JPS6489334A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/981—Auxiliary members, e.g. spacers
    • H10W72/983—Reinforcing structures, e.g. collars

Landscapes

  • Wire Bonding (AREA)

Abstract

PURPOSE:To obtain a pad adapted for a bipolar IC having relatively large self-heat generation and easily exposed with a high temperature by forming an aluminum 2-layer structure laid on a polycrystalline Si when a bonding pad is formed at an IC. CONSTITUTION:A polycrystalline Si pad 3 having an area of a square of approx. 100mum is formed simultaneously upon formation of a polycrystalline Si film, such as an emitter electrode on a semiconductor substrate 1 formed with an insulating film 2 on its surface by LOCOS oxidizing. Then, a first aluminum wiring layer 4 is formed on the part of the film 2, the whole surface including the pad 3 and the layer 4 is covered with an interlayer insulating film 5, an opening 5a for forming a contact between the wiring 4 and second aluminum wiring 6a is opened, and an opening 5b is also opened on the pad 3. Thereafter, an aluminum pad 6 is laminated on the pad 3, a second aluminum wiring 6A connected thereto is provided on the wiring 4, and the whole surface is covered with a protective film 7 while exposing the pad 6.
JP62247169A 1987-09-29 1987-09-29 Semiconductor integrated circuit device Pending JPS6489334A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62247169A JPS6489334A (en) 1987-09-29 1987-09-29 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62247169A JPS6489334A (en) 1987-09-29 1987-09-29 Semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPS6489334A true JPS6489334A (en) 1989-04-03

Family

ID=17159467

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62247169A Pending JPS6489334A (en) 1987-09-29 1987-09-29 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS6489334A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111894144A (en) * 2020-07-30 2020-11-06 福州鼓楼纹英建筑工程有限责任公司 Eccentric injection reinforcement connection structure between prefabricated reinforced concrete members

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111894144A (en) * 2020-07-30 2020-11-06 福州鼓楼纹英建筑工程有限责任公司 Eccentric injection reinforcement connection structure between prefabricated reinforced concrete members

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