JPS6489362A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6489362A JPS6489362A JP62245405A JP24540587A JPS6489362A JP S6489362 A JPS6489362 A JP S6489362A JP 62245405 A JP62245405 A JP 62245405A JP 24540587 A JP24540587 A JP 24540587A JP S6489362 A JPS6489362 A JP S6489362A
- Authority
- JP
- Japan
- Prior art keywords
- film
- contact hole
- oxide film
- light shielding
- window
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 239000002184 metal Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 1
- 230000008018 melting Effects 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 229910021332 silicide Inorganic materials 0.000 abstract 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 abstract 1
Landscapes
- Transforming Light Signals Into Electric Signals (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
PURPOSE:To effectively shield with good controllability by forming a window at the contact hole position of a light shielding layer of a burying structure simultaneously with the contact hole. CONSTITUTION:A gate electrode 9 made of a polycrystalline Si film is formed through a gate oxide film 6 on an Si substrate 1, N<+> type layers 2, 3 which become source, drain are formed, and a whole substrate is then covered with a CVD film 10. A high melting point silicide film 11 which becomes a light shielding film is formed on the whole surface of the film 10, and a CVD oxide film 12 is deposited thereon. Resist patterns of the contact holes with the layers 2, 3 are formed, and contact hole is formed through the films 12-10 by anisotropically etching. An oxide film 13 is formed on the sidewall of the film 11 by thermally oxidizing. Then, metal electrodes 141, 142 are formed. In a photodiode section, a photodetecting window is opened at the time of forming the contact hole, a metal film 143 is disposed simultaneously with the electrodes 141, 142 on the film 12 of this section, and double light-shielded.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62245405A JPS6489362A (en) | 1987-09-29 | 1987-09-29 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62245405A JPS6489362A (en) | 1987-09-29 | 1987-09-29 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6489362A true JPS6489362A (en) | 1989-04-03 |
Family
ID=17133163
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62245405A Pending JPS6489362A (en) | 1987-09-29 | 1987-09-29 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6489362A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4933991A (en) * | 1988-09-02 | 1990-06-19 | Love Terry J | Combination dress shirt and tie |
| US6208447B1 (en) | 1997-02-25 | 2001-03-27 | Matsushita Electric Industrial Co., Ltd. | Optical receiver |
-
1987
- 1987-09-29 JP JP62245405A patent/JPS6489362A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4933991A (en) * | 1988-09-02 | 1990-06-19 | Love Terry J | Combination dress shirt and tie |
| US6208447B1 (en) | 1997-02-25 | 2001-03-27 | Matsushita Electric Industrial Co., Ltd. | Optical receiver |
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