JPS6489364A - Manufacture of bipolar semiconductor integrated circuit device - Google Patents
Manufacture of bipolar semiconductor integrated circuit deviceInfo
- Publication number
- JPS6489364A JPS6489364A JP62244741A JP24474187A JPS6489364A JP S6489364 A JPS6489364 A JP S6489364A JP 62244741 A JP62244741 A JP 62244741A JP 24474187 A JP24474187 A JP 24474187A JP S6489364 A JPS6489364 A JP S6489364A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- collector
- emitter
- oxide film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 150000004767 nitrides Chemical class 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 1
- 238000002955 isolation Methods 0.000 abstract 1
- 230000000717 retained effect Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Landscapes
- Bipolar Transistors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62244741A JPH061785B2 (ja) | 1987-09-29 | 1987-09-29 | バイポーラ型半導体集積回路装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62244741A JPH061785B2 (ja) | 1987-09-29 | 1987-09-29 | バイポーラ型半導体集積回路装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6489364A true JPS6489364A (en) | 1989-04-03 |
| JPH061785B2 JPH061785B2 (ja) | 1994-01-05 |
Family
ID=17123201
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62244741A Expired - Lifetime JPH061785B2 (ja) | 1987-09-29 | 1987-09-29 | バイポーラ型半導体集積回路装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH061785B2 (ja) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03126228A (ja) * | 1989-10-12 | 1991-05-29 | Nec Corp | 半導体集積回路装置の製造方法 |
| US10080999B2 (en) | 2014-01-17 | 2018-09-25 | Ttp Labtech Ltd. | Sample vessel agitation apparatus and method |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6021568A (ja) * | 1983-07-15 | 1985-02-02 | Hitachi Ltd | 半導体装置の製造方法 |
-
1987
- 1987-09-29 JP JP62244741A patent/JPH061785B2/ja not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6021568A (ja) * | 1983-07-15 | 1985-02-02 | Hitachi Ltd | 半導体装置の製造方法 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03126228A (ja) * | 1989-10-12 | 1991-05-29 | Nec Corp | 半導体集積回路装置の製造方法 |
| US10080999B2 (en) | 2014-01-17 | 2018-09-25 | Ttp Labtech Ltd. | Sample vessel agitation apparatus and method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH061785B2 (ja) | 1994-01-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4531282A (en) | Bipolar transistors having vertically arrayed collector-base-emitter with novel polycrystalline base electrode surrounding island emitter and method of making same | |
| JPS55128869A (en) | Semiconductor device and method of fabricating the same | |
| JPS5467778A (en) | Production of semiconductor device | |
| JPS5586151A (en) | Manufacture of semiconductor integrated circuit | |
| JPS6489364A (en) | Manufacture of bipolar semiconductor integrated circuit device | |
| JPS6489359A (en) | Manufacture of bipolar semiconductor integrated circuit device | |
| JPS5541737A (en) | Preparation of semiconductor device | |
| JPS5642367A (en) | Manufacture of bipolar integrated circuit | |
| JPS56148863A (en) | Manufacture of semiconductor device | |
| JPS57155772A (en) | Manufacture of semiconductor device | |
| JPH021937A (ja) | トレンチ内にベース及びエミッタ構造を有する半導体バイポーラ・トランジスタ及びその製法 | |
| JPS6482668A (en) | Manufacture of bipolar transistor | |
| JPS6420635A (en) | Semiconductor integrated circuit device | |
| JPS6415974A (en) | Semiconductor device | |
| JPS6453454A (en) | Bipolar transistor and manufacture thereof | |
| JPS5658258A (en) | Semiconductor integrated circuit | |
| JPS6453572A (en) | Semiconductor integrated circuit device with bipolar element | |
| JPS564272A (en) | Semiconductor device | |
| JPS5575234A (en) | Semiconductor device | |
| JPS56133864A (en) | Semiconductor device and manufacture thereof | |
| JPS5787170A (en) | Semiconductor device | |
| JPS5460865A (en) | Semiconductor device | |
| JPS54125983A (en) | Manufacture of semiconductor device | |
| JPS54157475A (en) | Semiconductor device | |
| JPS5591864A (en) | Manufacture of semiconductor device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term | ||
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080105 Year of fee payment: 14 |