JPS6489552A - Ceramic substrate - Google Patents

Ceramic substrate

Info

Publication number
JPS6489552A
JPS6489552A JP62247562A JP24756287A JPS6489552A JP S6489552 A JPS6489552 A JP S6489552A JP 62247562 A JP62247562 A JP 62247562A JP 24756287 A JP24756287 A JP 24756287A JP S6489552 A JPS6489552 A JP S6489552A
Authority
JP
Japan
Prior art keywords
lead frame
substrate
bonded
stress relaxation
relaxation layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62247562A
Other languages
Japanese (ja)
Inventor
Takashi Takahashi
Yasuyuki Sugiura
Noriko Nakagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP62247562A priority Critical patent/JPS6489552A/en
Publication of JPS6489552A publication Critical patent/JPS6489552A/en
Pending legal-status Critical Current

Links

Landscapes

  • Ceramic Products (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Abstract

PURPOSE:To prevent cracking in junctions of a ceramic substrate and the degradation of junction strength by using a structure in which a metal lead frame is attached to a ceramic plate of aluminum nitride with a thermal-stress relaxation layer applied between them. CONSTITUTION:A semiconductor chip 2, e.g., Si chip, is bonded to one surface of an AlN substrate 1 with brazing metal. A lead frame 4 is bonded to the other surface of the substrate 1, for example, using a metallization or brazing metal layer 3. The lead frame 4 is composed, for example, of a 42 alloy or sealing metal 4B of covar cladded with a stress relaxation layer 4A of copper or copper alloy. This lead frame is bonded to the substrate on the stress relaxation layer 4A.
JP62247562A 1987-09-30 1987-09-30 Ceramic substrate Pending JPS6489552A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62247562A JPS6489552A (en) 1987-09-30 1987-09-30 Ceramic substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62247562A JPS6489552A (en) 1987-09-30 1987-09-30 Ceramic substrate

Publications (1)

Publication Number Publication Date
JPS6489552A true JPS6489552A (en) 1989-04-04

Family

ID=17165342

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62247562A Pending JPS6489552A (en) 1987-09-30 1987-09-30 Ceramic substrate

Country Status (1)

Country Link
JP (1) JPS6489552A (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60242653A (en) * 1984-05-16 1985-12-02 Daido Steel Co Ltd Composite material for lead frame
JPS61245555A (en) * 1985-04-24 1986-10-31 Toshiba Corp Terminal connecting structure for semiconductor
JPS61269343A (en) * 1985-05-24 1986-11-28 Hitachi Ltd Ceramic package
JPS6247153A (en) * 1985-08-27 1987-02-28 Ibiden Co Ltd semiconductor equipment

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60242653A (en) * 1984-05-16 1985-12-02 Daido Steel Co Ltd Composite material for lead frame
JPS61245555A (en) * 1985-04-24 1986-10-31 Toshiba Corp Terminal connecting structure for semiconductor
JPS61269343A (en) * 1985-05-24 1986-11-28 Hitachi Ltd Ceramic package
JPS6247153A (en) * 1985-08-27 1987-02-28 Ibiden Co Ltd semiconductor equipment

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