JPS649622A - Manufacture of thin film element - Google Patents

Manufacture of thin film element

Info

Publication number
JPS649622A
JPS649622A JP62164528A JP16452887A JPS649622A JP S649622 A JPS649622 A JP S649622A JP 62164528 A JP62164528 A JP 62164528A JP 16452887 A JP16452887 A JP 16452887A JP S649622 A JPS649622 A JP S649622A
Authority
JP
Japan
Prior art keywords
substrate
reactor
pattern
thin film
projected
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62164528A
Other languages
Japanese (ja)
Inventor
Kenji Iijima
Atsushi Abe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP62164528A priority Critical patent/JPS649622A/en
Publication of JPS649622A publication Critical patent/JPS649622A/en
Pending legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To make it possible to form an arbitrary thin film pattern without taking out a substrate out of a reactor, by projecting exciting light which activates a raw gas, etchant or the surface of the substrate in conformity with a specified thin film forming pattern or an etching pattern on the thin film substrate from the outside of a container. CONSTITUTION:As a raw material gas, trimethylaluminum(TMA) is supplied into a reactor 9. A mask pattern 2 is projected on a substrate 6 with CO2 laser. Then the inside of the reactor 9 is exhausted, and mixed gas of TMA and N2O at a ratio of 1:1 is introduced. An ArF excimer laser beam is projected on the substrate surface, and an Al2O3 film is formed. Then, the inside of the reactor 9 is exhausted again, and mono-silane (SiH4) is introduced, with the entire ArF laser being projected on the entire substrate. An Si film is formed in this way. Thereafter, the inside of the reactor 9 is exhausted again, and CH3Br is introduced as etching gas. The pattern 2 is projected on the substrate 6 by using the second harmonic waves of the Ar laser, and the Si film is etched. Thereafter, the inside of the reactor 9 exhausted, and TMA gas, which is diluted with helium, is introduced. The pattern 2 is irradiated with CO2 laser, and an aluminum thin film is formed.
JP62164528A 1987-07-01 1987-07-01 Manufacture of thin film element Pending JPS649622A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62164528A JPS649622A (en) 1987-07-01 1987-07-01 Manufacture of thin film element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62164528A JPS649622A (en) 1987-07-01 1987-07-01 Manufacture of thin film element

Publications (1)

Publication Number Publication Date
JPS649622A true JPS649622A (en) 1989-01-12

Family

ID=15794880

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62164528A Pending JPS649622A (en) 1987-07-01 1987-07-01 Manufacture of thin film element

Country Status (1)

Country Link
JP (1) JPS649622A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02220438A (en) * 1989-02-22 1990-09-03 Hitachi Ltd Method and apparatus for laser treatment

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02220438A (en) * 1989-02-22 1990-09-03 Hitachi Ltd Method and apparatus for laser treatment

Similar Documents

Publication Publication Date Title
ATE158110T1 (en) SELECTIVE ETCHING OF THIN LAYERS
JPS5593225A (en) Forming method of minute pattern
JPS649622A (en) Manufacture of thin film element
Yu et al. Metalorganic surface chemical adsorption deposition of AlN films by ammonia and trimethylaluminum
JPS5638464A (en) Formation of nitride film
JPS6425419A (en) Etching
JPS5321576A (en) Mask for x-ray exposure
JPS53124979A (en) Plasma etching method
JPS5719034A (en) Vapor growth apparatus
JPS56100443A (en) Manufacture of semiconductor device
JPS5692197A (en) Production of oriented crystal thin film
JPS5491059A (en) Etching method for phosphorus glass by plasma etching
JPS5353991A (en) Gallium phosphide light emitting element
JPS57136932A (en) Photochemical reaction device
JPS57172734A (en) Exposing process for electronic beam
JPS5346700A (en) Exposuring method for resist
JPS532074A (en) Scribing method for semiconductor wafer
JPS6418231A (en) Two-wavelength laser cvd device
JPS6464322A (en) Method of removing organic material
JPS6437839A (en) Etching
JPS6425422A (en) Etching method
JPS56122005A (en) Luminous flux synthesizer
JPS64730A (en) Formation of multilayer thin-film
JPS5397374A (en) Mask producing method
JPS533788A (en) Frequency adjustment method of crystal vibrator