JPS649655A - Photodetector built-in type semiconductor integrated circuit - Google Patents

Photodetector built-in type semiconductor integrated circuit

Info

Publication number
JPS649655A
JPS649655A JP62165673A JP16567387A JPS649655A JP S649655 A JPS649655 A JP S649655A JP 62165673 A JP62165673 A JP 62165673A JP 16567387 A JP16567387 A JP 16567387A JP S649655 A JPS649655 A JP S649655A
Authority
JP
Japan
Prior art keywords
type semiconductor
region
integrated circuit
type
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62165673A
Other languages
Japanese (ja)
Other versions
JPH07120761B2 (en
Inventor
Atsuo Hori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62165673A priority Critical patent/JPH07120761B2/en
Publication of JPS649655A publication Critical patent/JPS649655A/en
Publication of JPH07120761B2 publication Critical patent/JPH07120761B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To contrive accomplishment of both high quality and low cost of a photodetector built-in type semiconductor integrated circuit by a method wherein said integrated circuit is constituted in such a manner that an electronic circuit, consisting of a P-N junction photodiode and the bipolar transistor with which the output signal of the P-N junction photodiode will be amplified, is contained therein. CONSTITUTION:The title integrated circuit is provided with a P-type semiconductor region 2, a P-type semiconductor layer 5 provided in the region (N-type epitaxial layer 2-1) surrounded by a P-type semiconductor base plate 1, a P-N junction diode having an electrode wiring 9, with which the P-type semiconductor layer 5 and a P-type semiconductor region will be connected, and an electronic circuit containing a bipolar transistor with which the output signal of said P-N junction photodiode will be amplified. The P-N junction photodiode has an N-type epitaxial layer 2-1 as a cathode region, and it has also a P-type semiconductor layer 5, a P-type insulation isolation region 3-2 and a P-type semiconductor base plate 1 as an anode region, and they are shielded by connecting said anode region to the reference potential terminal of earthing terminal and the like. As the anode region is provided on the circumference of the P-N junction diode above-mentioned, the title integrated circuit has an excellent photoelectric conversion efficiency.
JP62165673A 1987-07-01 1987-07-01 Semiconductor integrated circuit with built-in light receiving element Expired - Lifetime JPH07120761B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62165673A JPH07120761B2 (en) 1987-07-01 1987-07-01 Semiconductor integrated circuit with built-in light receiving element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62165673A JPH07120761B2 (en) 1987-07-01 1987-07-01 Semiconductor integrated circuit with built-in light receiving element

Publications (2)

Publication Number Publication Date
JPS649655A true JPS649655A (en) 1989-01-12
JPH07120761B2 JPH07120761B2 (en) 1995-12-20

Family

ID=15816854

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62165673A Expired - Lifetime JPH07120761B2 (en) 1987-07-01 1987-07-01 Semiconductor integrated circuit with built-in light receiving element

Country Status (1)

Country Link
JP (1) JPH07120761B2 (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0399460A (en) * 1989-09-12 1991-04-24 Mitsubishi Electric Corp Semiconductor device
JPH0440553U (en) * 1990-08-02 1992-04-07
JPH0730143A (en) * 1993-07-13 1995-01-31 Nec Corp Optical-coupling semiconductor device
US6208447B1 (en) 1997-02-25 2001-03-27 Matsushita Electric Industrial Co., Ltd. Optical receiver
WO2008143211A1 (en) * 2007-05-18 2008-11-27 Sharp Kabushiki Kaisha Display device
WO2008143213A1 (en) * 2007-05-18 2008-11-27 Sharp Kabushiki Kaisha Display device
US8309901B2 (en) 2007-05-18 2012-11-13 Sharp Kabushiki Kaisha Display device adjusting luminance of display based at least on detections by ambient light sensors

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62131570A (en) * 1985-12-03 1987-06-13 Sharp Corp Semiconductor light receiving device
JPS62226659A (en) * 1986-03-28 1987-10-05 Canon Inc Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62131570A (en) * 1985-12-03 1987-06-13 Sharp Corp Semiconductor light receiving device
JPS62226659A (en) * 1986-03-28 1987-10-05 Canon Inc Semiconductor device

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0399460A (en) * 1989-09-12 1991-04-24 Mitsubishi Electric Corp Semiconductor device
JPH0440553U (en) * 1990-08-02 1992-04-07
JPH0730143A (en) * 1993-07-13 1995-01-31 Nec Corp Optical-coupling semiconductor device
US6208447B1 (en) 1997-02-25 2001-03-27 Matsushita Electric Industrial Co., Ltd. Optical receiver
WO2008143211A1 (en) * 2007-05-18 2008-11-27 Sharp Kabushiki Kaisha Display device
WO2008143213A1 (en) * 2007-05-18 2008-11-27 Sharp Kabushiki Kaisha Display device
US8309901B2 (en) 2007-05-18 2012-11-13 Sharp Kabushiki Kaisha Display device adjusting luminance of display based at least on detections by ambient light sensors
JP5073741B2 (en) * 2007-05-18 2012-11-14 シャープ株式会社 Display device
US8368676B2 (en) 2007-05-18 2013-02-05 Sharp Kabushiki Kaisha Display device with light shield
JP5225985B2 (en) * 2007-05-18 2013-07-03 シャープ株式会社 Display device

Also Published As

Publication number Publication date
JPH07120761B2 (en) 1995-12-20

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