JPS649680A - Manufacture of semiconductor laser - Google Patents

Abstract

PURPOSE:To form simply a long-lived and highly reliable semiconductor laser, whose highest photo output is large, with good reproducibility by a method wherein a compound semiconductor layer is grown by a MOCVD method and the ultraviolet light of a specified wavelength is irradiated on a window region only during the growth of a compound semiconductor thin film at the window region, where is an active layer region. CONSTITUTION:Raw gas is introduced in a reaction tube 210 through a raw gas introducing system 209 and is caused to flow on a heated GaAs substrate 211 to grow a compound semiconductor thin film. In the formation of a window region, the ultraviolet light of a wavelength of 180-300nm from a KrCl excimer laser 201 is shaped by cylindrical lenses 202, is reflected by a mirror 203 and is turned into parallel beams by synthetic quartz lenses 204 and 205 during the growth of an active layer. Moreover, the focal point of a striped pattern is formed on the substrate by a synthetic quartz reduction lens 207 through a mask 206 with the striped pattern formed thereon. Thereby, by forming the window region having a large energy gap, a long-lived semiconductor laser, whose resonator end surface is never deteriorated and whose maximum output is large, can be obtained with good reproducibility.