JPS649680A - Manufacture of semiconductor laser - Google Patents

Manufacture of semiconductor laser

Info

Publication number
JPS649680A
JPS649680A JP16560987A JP16560987A JPS649680A JP S649680 A JPS649680 A JP S649680A JP 16560987 A JP16560987 A JP 16560987A JP 16560987 A JP16560987 A JP 16560987A JP S649680 A JPS649680 A JP S649680A
Authority
JP
Japan
Prior art keywords
window region
compound semiconductor
semiconductor laser
whose
lived
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16560987A
Other languages
English (en)
Other versions
JP2545233B2 (ja
Inventor
Tatsuya Asaga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP62165609A priority Critical patent/JP2545233B2/ja
Publication of JPS649680A publication Critical patent/JPS649680A/ja
Application granted granted Critical
Publication of JP2545233B2 publication Critical patent/JP2545233B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Semiconductor Lasers (AREA)
JP62165609A 1987-07-02 1987-07-02 半導体レ−ザの製造方法 Expired - Lifetime JP2545233B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62165609A JP2545233B2 (ja) 1987-07-02 1987-07-02 半導体レ−ザの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62165609A JP2545233B2 (ja) 1987-07-02 1987-07-02 半導体レ−ザの製造方法

Publications (2)

Publication Number Publication Date
JPS649680A true JPS649680A (en) 1989-01-12
JP2545233B2 JP2545233B2 (ja) 1996-10-16

Family

ID=15815612

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62165609A Expired - Lifetime JP2545233B2 (ja) 1987-07-02 1987-07-02 半導体レ−ザの製造方法

Country Status (1)

Country Link
JP (1) JP2545233B2 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998042891A1 (en) * 1997-03-26 1998-10-01 Tetra Laval Holdings & Finance, S.A. Process for coating the interior wall of a container

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61220394A (ja) * 1985-03-26 1986-09-30 Mitsubishi Electric Corp レーザダイオードの製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61220394A (ja) * 1985-03-26 1986-09-30 Mitsubishi Electric Corp レーザダイオードの製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998042891A1 (en) * 1997-03-26 1998-10-01 Tetra Laval Holdings & Finance, S.A. Process for coating the interior wall of a container

Also Published As

Publication number Publication date
JP2545233B2 (ja) 1996-10-16

Similar Documents

Publication Publication Date Title
KR100979456B1 (ko) 프리스탠딩 (알루미늄, 갈륨, 인듐)질화물 및 이를 제조하기 위한 분리방법
US4843031A (en) Method of fabricating compound semiconductor laser using selective irradiation
JPS649680A (en) Manufacture of semiconductor laser
US20210175388A1 (en) Patterned epitaxial structure laser lift-off device
JPH0821756B2 (ja) 半導体レーザの製造方法
JPH02286358A (ja) 発光装置
JPS5992523A (ja) 結晶成長法
JP2962750B2 (ja) レーザcvd法による光学素子製造におけるレーザビームの照射方法
CN208538816U (zh) 一种图形化外延结构激光剥离装置
JP2664389B2 (ja) 半導体レーザの製造方法
JPH0271574A (ja) 半導体レーザ及びその製造方法
JP2629190B2 (ja) 半導体レーザの製造方法
JPH06306616A (ja) 半導体素子の製造方法
KR100234005B1 (ko) 산화알루미늄갈륨비소를 이용한 광전소자의 전류차단구조 형성방법
JP2629194B2 (ja) 半導体レーザの製造方法
KR910004055B1 (ko) 선택적 에피탁시를 이용한 표면 반사거울면의 제조방법
JPH0322410A (ja) 半導体薄膜形成法
JPH02230785A (ja) 半導体レーザの製造方法
JPS60216556A (ja) 半導体装置の製造方法
JPH01241503A (ja) マイクロレンズおよびその製造方法
Chen et al. Laser Assisted Atomic Layer Epitaxy-A Vehicle to Optoelectronic Integration
JPS6131392A (ja) 気相結晶成長装置
Sandoval et al. Continuous graded cavity for unstable resonator laser diodes by laser‐assisted chemical etching
JPH0586076B2 (ja)
JPH0964483A (ja) 光半導体装置の製造方法

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term