KR20130102632A - 도가니 - Google Patents
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- KR20130102632A KR20130102632A KR1020137017900A KR20137017900A KR20130102632A KR 20130102632 A KR20130102632 A KR 20130102632A KR 1020137017900 A KR1020137017900 A KR 1020137017900A KR 20137017900 A KR20137017900 A KR 20137017900A KR 20130102632 A KR20130102632 A KR 20130102632A
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- C30B28/00—Production of homogeneous polycrystalline material with defined structure
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- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
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- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
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- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
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- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
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- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/327—Iron group oxides, their mixed metal oxides, or oxide-forming salts thereof
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- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
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Abstract
Description
Claims (16)
- · 고체 및 액체의 슬러리를 준비하는 단계로서,
상기 고체는,
·규소 금속 분말
·25 % (w/w)까지 SiC 분말
·10 % (w/w)까지 SiN
·0,5 % (w/w)까지의 촉매
·1 % (w/w)까지의 결합제
로 이루어진, 단계,
·도가니의 그린 성형체(green body of a crucible) 내로 상기 슬러리를 형성하는 단계,
·질화 규소(silicon nitride)에 적어도 부분적으로 상기 규소를 반응시키기 위해, 임의적으로 비활성 기체를 포함하는, 질소 분위기(nitrogen atmosphere)에서 상기 그린 성형체를 가열하는 단계,
를 포함하는 규소의 결정화를 위한 도가니를 제조하기 위한 방법.
- 제1항에 있어서,
상기 규소 금속 분말의 입자 크기가 0 내지 100 μm, 바람직하게 0 내지 45 μm의 범위인 것인, 방법.
- 제1항 또는 제2항에 있어서,
적어도 75 % (w/w)의 상기 고체는 규소 금속 분말인 것인, 방법.
- 제1항 내지 제3항 중 어느 한 항에 있어서,
상기 고체는 15 % (w/w)까지의 SiC 분말을 포함하는 것인, 방법.
- 제1항 내지 제4항 중 어느 한 항에 있어서,
상기 촉매는 FeO이고 및/또는 상기 결합제는 수성 중합체 분산액(aqueous polymer dispersion)인 것인, 방법.
- 제1항 내지 제5항 중 어느 한 항에 있어서,
상기 비활성 기체는, 아르곤, 헬륨 및 이의 혼합물로부터 선택되는 것인, 방법.
- 제1항 내지 제6항 중 어느 한 항에 있어서,
임의적으로 비활성 기체를 포함하는, 질소 대기(atmosphere)의 압력은 200 내지 1400 mbar인 것인, 방법.
- 제1항 내지 제7항 중 어느 한 항에 있어서,
가열은, 1050 ℃ 이상, 바람직하게 1250 ℃ 이상, 보다 바람직하게 1400 ℃이상의 온도에서 수행(conduct)되는 것인, 방법.
- 제1항 내지 제8항 중 어느 한 항에 있어서,
가열은, 1000 ℃ 이상의 온도에서, 3 내지 14 일 동안 수행되는 것인, 방법.
- 제1항 내지 제9항 중 어느 한 항에 있어서,
상기 규소 금속 분말은, 바이모달 또는 다중 입경 분포(bimodal or multimodal particle size distribution)로 있는 것인, 방법.
- 제1항 내지 제10항 중 어느 한 항의 방법에 의해 수득가능한 도가니.
- 제11항에 있어서,
ASTM C-20에 따라 측정된, 14 내지 25 %의 겉보기 기공률(apparent porosity)을 갖는 것인, 도가니.
- 제11항 또는 제12항에 있어서,
2.3 내지 2.6 kg/dm3 의 밀도를 갖는, 도가니.
- 규소의 결정화를 위한 제10항 내지 제13항 중 어느 한 항의 도가니의 용도.
- 제14항에 있어서,
상기 규소는 단결정질(monocrystalline)인 것인, 용도.
- 제14항에 있어서,
상기 규소는 다결정질(polycrystalline)인 것인, 용도.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP10196529 | 2010-12-22 | ||
| EP10196529.1 | 2010-12-22 | ||
| PCT/EP2011/073250 WO2012084832A1 (en) | 2010-12-22 | 2011-12-19 | Crucibles |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20130102632A true KR20130102632A (ko) | 2013-09-17 |
| KR101550115B1 KR101550115B1 (ko) | 2015-09-03 |
Family
ID=43560033
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020137017900A Expired - Fee Related KR101550115B1 (ko) | 2010-12-22 | 2011-12-19 | 도가니 |
Country Status (14)
| Country | Link |
|---|---|
| US (1) | US20130284084A1 (ko) |
| EP (1) | EP2655705B1 (ko) |
| JP (1) | JP2014503459A (ko) |
| KR (1) | KR101550115B1 (ko) |
| CN (1) | CN103298983B (ko) |
| AR (1) | AR084513A1 (ko) |
| DK (1) | DK2655705T3 (ko) |
| ES (1) | ES2535340T3 (ko) |
| HU (1) | HUE025241T2 (ko) |
| PL (1) | PL2655705T3 (ko) |
| SG (1) | SG191169A1 (ko) |
| SI (1) | SI2655705T1 (ko) |
| TW (1) | TWI523827B (ko) |
| WO (1) | WO2012084832A1 (ko) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105198440B (zh) * | 2015-11-02 | 2018-02-06 | 攀枝花学院 | 耐热震性碳化硅坩埚及其制作工艺 |
| DE102018206982B4 (de) * | 2018-05-04 | 2025-02-20 | Alzchem Trostberg Gmbh | Tiegel zur Herstellung von multikristallinem Silicium mittels gerichteter Erstarrung, Verfahren zu dessen Herstellung und dessen Verwendung |
| FR3131295B1 (fr) | 2021-12-23 | 2023-12-29 | Saint Gobain Ct Recherches | support de cuisson de poudre alcaline avec revêtement de porosité contrôlée |
| FR3159808B1 (fr) | 2024-02-29 | 2026-02-13 | Saint Gobain Ct Recherches | support poreux avec revêtement céramique de porosité contrôlée |
| WO2026041719A1 (fr) | 2024-08-22 | 2026-02-26 | Saint-Gobain Centre De Recherches Et D'etudes Europeen | Support de cuisson comprenant un revêtement de grains de borocarbonitrure et une phase liante phosphatee |
| FR3165693A3 (fr) | 2024-08-22 | 2026-02-27 | Saint-Gobain Centre De Recherches Et D'etudes Europeen | Support de cuisson comprenant un revêtement de grains de borocarbonitrure et une phase liante phosphatée |
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| GB895769A (en) * | 1959-02-27 | 1962-05-09 | Nat Res Dev | Improvements in or relating to shaped silicon nitride bodies and their manufacture |
| US3206318A (en) | 1961-04-25 | 1965-09-14 | Showa Denko Kk | Refractory material |
| GB1206468A (en) * | 1967-04-10 | 1970-09-23 | Lucas Industries Ltd | Method of manufacturing silicon nitride powder |
| GB1373816A (en) * | 1972-05-11 | 1974-11-13 | Advanced Materials Eng | Method of making ceramic hollow -ware articles from powdered material |
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| CA2116644A1 (en) * | 1994-02-28 | 1995-08-29 | Yasunobu Kawakami | Silicon nitride reaction-sintered body and method and apparatus for producing same |
| US5928601A (en) * | 1994-02-28 | 1999-07-27 | Honda Giken Kogyo Kabushiki Kaisha | Method for producing silicon nitride reaction sintered body |
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| JPH11278812A (ja) * | 1998-03-30 | 1999-10-12 | Shin Etsu Chem Co Ltd | 窒化ケイ素粉末の製造方法 |
| NO317080B1 (no) * | 2002-08-15 | 2004-08-02 | Crusin As | Silisiumnitriddigler som er bestandige mot silisiumsmelter og fremgangsmate for fremstilling av slike digler |
| EP1811064A1 (fr) * | 2006-01-12 | 2007-07-25 | Vesuvius Crucible Company | Creuset pour le traitement de silicium à l'état fondu |
| KR20090024797A (ko) * | 2006-06-23 | 2009-03-09 | 알이씨 스캔웨이퍼 에이에스 | 재사용가능한 도가니 및 이를 제조하는 방법 |
| KR20090023498A (ko) * | 2006-06-23 | 2009-03-04 | 알이씨 스캔웨이퍼 에이에스 | 반도체 등급 다결정 실리콘 잉곳의 직접 응결을 위한 도가니 및 방법 |
| DE102006060561C5 (de) * | 2006-12-21 | 2015-09-10 | Schott Ag | Verfahren zur Herstellung eines Quarzglasformkörpers |
| US8062704B2 (en) * | 2007-08-02 | 2011-11-22 | Motech Americas, Llc | Silicon release coating, method of making same, and method of using same |
| CN201567387U (zh) * | 2009-12-01 | 2010-09-01 | 江苏华盛精细陶瓷科技有限公司 | 太阳能电池用氮化硅坩埚 |
| CN201553616U (zh) * | 2009-12-01 | 2010-08-18 | 江苏华盛精细陶瓷科技有限公司 | 多晶硅太阳能电池铸锭用氮化硅坩埚 |
-
2011
- 2011-12-19 ES ES11807894.8T patent/ES2535340T3/es active Active
- 2011-12-19 KR KR1020137017900A patent/KR101550115B1/ko not_active Expired - Fee Related
- 2011-12-19 DK DK11807894T patent/DK2655705T3/en active
- 2011-12-19 WO PCT/EP2011/073250 patent/WO2012084832A1/en not_active Ceased
- 2011-12-19 EP EP11807894.8A patent/EP2655705B1/en not_active Not-in-force
- 2011-12-19 JP JP2013545272A patent/JP2014503459A/ja active Pending
- 2011-12-19 SG SG2013045984A patent/SG191169A1/en unknown
- 2011-12-19 PL PL11807894T patent/PL2655705T3/pl unknown
- 2011-12-19 HU HUE11807894A patent/HUE025241T2/en unknown
- 2011-12-19 SI SI201130464T patent/SI2655705T1/sl unknown
- 2011-12-19 US US13/997,155 patent/US20130284084A1/en not_active Abandoned
- 2011-12-19 CN CN201180058403.6A patent/CN103298983B/zh not_active Expired - Fee Related
- 2011-12-21 AR ARP110104852A patent/AR084513A1/es not_active Application Discontinuation
- 2011-12-22 TW TW100148208A patent/TWI523827B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| ES2535340T3 (es) | 2015-05-08 |
| US20130284084A1 (en) | 2013-10-31 |
| WO2012084832A1 (en) | 2012-06-28 |
| TW201226364A (en) | 2012-07-01 |
| CN103298983A (zh) | 2013-09-11 |
| EP2655705B1 (en) | 2015-01-28 |
| DK2655705T3 (en) | 2015-04-27 |
| SG191169A1 (en) | 2013-07-31 |
| JP2014503459A (ja) | 2014-02-13 |
| SI2655705T1 (sl) | 2015-07-31 |
| PL2655705T3 (pl) | 2015-08-31 |
| EP2655705A1 (en) | 2013-10-30 |
| TWI523827B (zh) | 2016-03-01 |
| AR084513A1 (es) | 2013-05-22 |
| CN103298983B (zh) | 2016-03-16 |
| HUE025241T2 (en) | 2016-03-29 |
| KR101550115B1 (ko) | 2015-09-03 |
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