KR20170043459A - 부가 일액 경화형 열전도성 실리콘 그리스 조성물 - Google Patents
부가 일액 경화형 열전도성 실리콘 그리스 조성물 Download PDFInfo
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Abstract
본 발명에 따르면, 높은 형상 보유 특성을 가지고, 경도가 낮으며, 정상 온도에서 저장될 수 있는 조성물이 제공될 수 있다.
Description
| 화합된 양 (중량부) | 실시예 | 비교예 | |||||||||
| 1 | 2 | 3 | 4 | 5 | 6 | 7 | 1 | 2 | 3 | ||
| 성분 (A) | A-1 | 75 | 75 | 75 | 75 | 75 | 75 | 75 | 75 | 75 | 75 |
| A-2 | 10 | 10 | 10 | 10 | 10 | 10 | 10 | 10 | 10 | 10 | |
| 성분 (B) | B-1 | 0.25 | 0.25 | 0.25 | 0.25 | 0 | 0 | 0 | 0 | 0 | 0.25 |
| B-2 | 0 | 0 | 0 | 0 | 0.22 | 0.22 | 0.22 | 0 | 0 | 0 | |
| B-3 | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 0.6 | 0 | 0 | |
| B-4 | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 2.2 | 0 | |
| 성분 (C) | C-1 | 1.2 | 1.2 | 0 | 0 | 1.2 | 1.2 | 1.2 | 1.2 | 1.2 | 0 |
| C-2 | 0 | 0 | 0.3 | 0.3 | 0 | 0 | 0 | 0 | 0 | 0 | |
| C-3 | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 0.6 | |
| 성분 (D) | D-1 | 1,000 | 1,000 | 1,000 | 1,000 | 1,000 | 0 | 0 | 1,000 | 1,000 | 1,000 |
| D-2 | 0 | 0 | 0 | 0 | 0 | 600 | 600 | 0 | 0 | 0 | |
| 성분 (E) | E-1 | 15 | 15 | 15 | 15 | 15 | 15 | 15 | 15 | 15 | 15 |
| 성분 (F) | F-1 | 2.5 | 0 | 2.5 | 0 | 0 | 2.5 | 0 | 2.5 | 2.5 | 0 |
| 성분 (H) | H-1 | 0.1 | 0.1 | 0.1 | 0.1 | 0.1 | 0 | 0 | 0 | 0 | 0 |
| Si-H/Si-Vi (mol/mol) | 0.4 | 0.4 | 0.4 | 0.4 | 0.4 | 0.4 | 0.4 | 0.4 | 0.4 | 0.4 | |
| 점도 (Pa·s) | 94 | 81 | 105 | 92 | 92 | 126 | 111 | 88 | 71 | - | |
| 열 전도성 (W/m·℃) | 3.0 | 3.0 | 3.1 | 3.1 | 3.0 | 3.0 | 3.0 | 3.0 | 2.8 | - | |
| 경도 (Asker C) | 31 | 30 | 32 | 31 | 26 | 20 | 19 | 51 | 40 | - | |
| 형상 보유 특성 (mm) | 0 | 0.1 | 0 | 0.1 | 0.1 | 0 | 0.1 | 0 | 0 | - | |
| 25℃ 저장 안정성 (경과일) |
적어도 180 |
적어도 180 | 적어도 180 |
적어도 180 |
적어도 180 | 적어도 180 |
적어도 180 | 2 미만 |
5 미만 |
- | |
| 25℃에서 저장 후 점도 (Paㆍs) | 117 | 105 | 116 | 99 | 103 | 151 | 139 | - | - | - | |
| 40℃에서 가속화 후의 점도 (Paㆍs) | 193 | 180 | 142 | 123 | 187 | 229 | 202 | - | - | - | |
Claims (5)
- 정상 온도에서 저장될 수 있는 부가 일액 경화형 열전도성 실리콘 그리스 조성물로서, 조성물은
(A) 분자당 적어도 하나의 알케닐기를 함유하고 25℃에서 50 mPa·s 내지 100,000 mPa·s의 점도를 가지는 오가노폴리실록산 100 중량부;
(B) 분자당 적어도 2개의 규소-결합된 수소 원자를 함유하며, R2SiO 단위 (여기서 R은 독립적으로 치환되지 않았거나 치환된 1가 탄화수소기를 나타냄)를 갖지 않고, 어떠한 말단 단부에서도 규소-결합된 수소 원자를 갖지 않으며, 측쇄 또는 쇄들에서만 규소-결합된 수소 원자를 가지고, 실질적으로 직쇄 형태인, {Si-H 기의 수}/{조성물 중의 알케닐기의 수}의 비율이 0.1 내지 5.0의 범위 내에 있게 되는 양으로 존재하는 오가노하이드로젠폴리실록산;
(C) 트라이메틸(아세틸아세토네이토)백금 착체,
백금 트라이메틸(2,4-펜탄다이오네이트) 착체,
백금 트라이메틸(3,5-헵탄다이오네이트) 착체,
백금 트라이메틸(메틸아세토아세테이트) 착체,
비스(2,4-펜탄다이오네이토)백금 착체,
비스(2,4-헥산다이오네이토)백금 착체,
비스(2,4-헵탄다이오네이토)백금 착체,
비스(3,5-헵탄다이오네이토)백금 착체,
비스(1-페닐-1,3-부탄다이오네이토)백금 착체,
비스(1,3-다이페닐-1,3-프로판다이오네이토)백금 착체,
(1,5-사이클로옥타다이에닐)다이메틸 백금 착체,
(1,5-사이클로옥타다이에닐)다이페닐 백금 착체,
(1,5-사이클로옥타다이에닐)다이프로필 백금 착체,
(2,5-노르보라다이엔)다이메틸 백금 착체,
(2,5-노르보라다이엔)다이페닐 백금 착체,
(사이클로펜타다이에닐)다이메틸 백금 착체,
(메틸사이클로펜타다이에닐)다이에틸 백금 착체,
(트라이메틸실릴사이클로펜타다이에닐)다이페닐 백금 착체,
(메틸사이클로옥타-1,5-다이에닐)다이에틸 백금 착체,
(사이클로펜타다이에닐)트라이메틸 백금 착체,
(사이클로펜타다이에닐)에틸다이메틸 백금 착체,
(사이클로펜타다이에닐)아세틸다이메틸 백금 착체,
(메틸사이클로펜타다이에닐)트라이메틸 백금 착체,
(메틸사이클로펜타다이에닐)트라이헥실 백금 착체,
(트라이메틸실릴사이클로펜타다이에닐)트라이메틸 백금 착체,
(다이메틸페닐실릴사이클로펜타다이에닐)트라이페닐 백금 착체 및
(사이클로펜타다이에닐)다이메틸트라이메틸실릴메틸 백금 착체로 구성되는 군으로부터 선택된 광활성형 백금 착체 경화 촉매 유효량; 및
(D) 적어도 10 W/m·℃의 열 전도성을 가지는 열전도성 충전제 100 내지 20,000 중량부를 포함하고,
이때 조성물은 10 rpm의 회전 속도에서 Malcom 점도계에 의해 측정되는 바 25℃에서 30 Pa·s 내지 800 Pa·s의 점도를 가지는, 부가 일액 경화형 열전도성 실리콘 그리스 조성물. - 제 1항에 있어서, 추가로
(F) 0.1 내지 100 중량부의 미세 실리카 분말을 포함하는 것을 특징으로 하는 부가 일액 경화형 열전도성 실리콘 그리스 조성물. - 제 3항에 있어서, 성분 (F)의 미세 실리카 분말은 표면-처리된 흄드 실리카인 것을 특징으로 하는 부가 일액 경화형 열전도성 실리콘 그리스 조성물.
- 제 1항에 있어서, 조성물은 형상 보유 특성을 가져서 1 cm의 직경을 가지는 디스크를 형성하기 위한 방식으로 25℃의 환경에서 0.5 mL의 조성물이 알루미늄판 위에 적용되고 그 디스크가 25℃에서 24시간 동안 수평으로 유지될 때, 디스크는 1 mm 이내의 직경 변화를 나타내게 되고, 조성물은 가열되고 점도가 증가된 후 Asker C형 고무 경도계에 의해 측정되는 바 1 내지 90의 경도를 가지는 것을 특징으로 하는 부가 일액 경화형 열전도성 실리콘 그리스 조성물.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015201832A JP6524879B2 (ja) | 2015-10-13 | 2015-10-13 | 付加一液硬化型熱伝導性シリコーングリース組成物 |
| JPJP-P-2015-201832 | 2015-10-13 |
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| KR20170043459A true KR20170043459A (ko) | 2017-04-21 |
| KR102084526B1 KR102084526B1 (ko) | 2020-03-04 |
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| US (1) | US10030184B2 (ko) |
| EP (1) | EP3156456B1 (ko) |
| JP (1) | JP6524879B2 (ko) |
| KR (1) | KR102084526B1 (ko) |
| CN (1) | CN106566253A (ko) |
| ES (1) | ES2854448T3 (ko) |
| TW (1) | TWI682030B (ko) |
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| KR20200045680A (ko) | 2018-10-23 | 2020-05-06 | (주)해인디지탈 | 써멀 그리스 장치 및 그의 제조방법 |
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| KR102084526B1 (ko) | 2020-03-04 |
| JP2017075202A (ja) | 2017-04-20 |
| TW201726901A (zh) | 2017-08-01 |
| JP6524879B2 (ja) | 2019-06-05 |
| EP3156456A1 (en) | 2017-04-19 |
| ES2854448T3 (es) | 2021-09-21 |
| CN106566253A (zh) | 2017-04-19 |
| US20170101570A1 (en) | 2017-04-13 |
| TWI682030B (zh) | 2020-01-11 |
| US10030184B2 (en) | 2018-07-24 |
| EP3156456B1 (en) | 2021-01-20 |
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