KR20170092465A - 반도체 장치 및 그 제조 방법 - Google Patents

반도체 장치 및 그 제조 방법 Download PDF

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KR20170092465A
KR20170092465A KR1020170014528A KR20170014528A KR20170092465A KR 20170092465 A KR20170092465 A KR 20170092465A KR 1020170014528 A KR1020170014528 A KR 1020170014528A KR 20170014528 A KR20170014528 A KR 20170014528A KR 20170092465 A KR20170092465 A KR 20170092465A
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insulating film
film
gate electrode
silicon nitride
semiconductor substrate
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Korean (ko)
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마사아끼 시노하라
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르네사스 일렉트로닉스 가부시키가이샤
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Publication of KR20170092465A publication Critical patent/KR20170092465A/ko
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    • G11C16/0466Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
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    • H10D30/694IGFETs having charge trapping gate insulators, e.g. MNOS transistors characterised by the shapes, relative sizes or dispositions of the gate electrodes
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  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
KR1020170014528A 2016-02-03 2017-02-01 반도체 장치 및 그 제조 방법 Withdrawn KR20170092465A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016018589A JP6683488B2 (ja) 2016-02-03 2016-02-03 半導体装置およびその製造方法
JPJP-P-2016-018589 2016-02-03

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KR20170092465A true KR20170092465A (ko) 2017-08-11

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US (2) US9837427B2 (2)
JP (1) JP6683488B2 (2)
KR (1) KR20170092465A (2)
CN (1) CN107039454B (2)
TW (1) TW201801253A (2)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200121487A (ko) * 2019-04-16 2020-10-26 삼성전자주식회사 반도체 장치 및 그 제조 방법
KR20220030907A (ko) * 2020-09-03 2022-03-11 르네사스 일렉트로닉스 가부시키가이샤 반도체 장치의 제조 방법

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6518485B2 (ja) 2015-03-30 2019-05-22 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP6917737B2 (ja) * 2017-03-13 2021-08-11 ユナイテッド・セミコンダクター・ジャパン株式会社 半導体装置の製造方法
US10297602B2 (en) * 2017-05-18 2019-05-21 Taiwan Semiconductor Manufacturing Company, Ltd. Implantations for forming source/drain regions of different transistors
US10872898B2 (en) * 2017-07-19 2020-12-22 Cypress Semiconductor Corporation Embedded non-volatile memory device and fabrication method of the same
KR102369509B1 (ko) * 2018-01-08 2022-03-02 삼성전자주식회사 반도체 장치 및 그 제조 방법
JP2021027096A (ja) * 2019-08-01 2021-02-22 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
GB2591472B (en) * 2020-01-28 2022-02-09 X Fab France Sas Method of forming asymmetric differential spacers for optimized MOSFET performance and optimized mosfet and SONOS co-integration

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4477886B2 (ja) 2003-04-28 2010-06-09 株式会社ルネサステクノロジ 半導体装置の製造方法
JP5013050B2 (ja) * 2006-06-14 2012-08-29 富士通セミコンダクター株式会社 半導体装置の製造方法
KR100852209B1 (ko) * 2007-06-01 2008-08-13 삼성전자주식회사 반도체 소자 및 그 제조 방법.
KR20120102932A (ko) * 2011-03-09 2012-09-19 에스케이하이닉스 주식회사 반도체 소자 및 그 제조방법
JP5693380B2 (ja) * 2011-05-30 2015-04-01 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP5847537B2 (ja) * 2011-10-28 2016-01-27 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体装置
JP6045873B2 (ja) * 2012-10-05 2016-12-14 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP6120609B2 (ja) * 2013-02-25 2017-04-26 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体装置
JP2014204041A (ja) * 2013-04-08 2014-10-27 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP6297860B2 (ja) * 2014-02-28 2018-03-20 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US9269792B2 (en) * 2014-06-09 2016-02-23 International Business Machines Corporation Method and structure for robust finFET replacement metal gate integration
US9536890B2 (en) * 2015-04-01 2017-01-03 Powerchip Technology Corporation Semiconductor transistor and flash memory, and manufacturing method thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200121487A (ko) * 2019-04-16 2020-10-26 삼성전자주식회사 반도체 장치 및 그 제조 방법
KR20220030907A (ko) * 2020-09-03 2022-03-11 르네사스 일렉트로닉스 가부시키가이샤 반도체 장치의 제조 방법

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