KR20190131029A - 원통형 스퍼터링 타깃의 제조 방법, 및, 원통형 스퍼터링 타깃 - Google Patents
원통형 스퍼터링 타깃의 제조 방법, 및, 원통형 스퍼터링 타깃 Download PDFInfo
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/20—Preliminary treatment of work or areas to be soldered, e.g. in respect of a galvanic coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
- H01J37/3491—Manufacturing of targets
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
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- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
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- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
도 2 는, 스퍼터링 타깃재와 접합층의 접합 계면, 및, 백킹 튜브와 접합층의 접합 계면의 확대 설명도이다.
도 3A 는, 스퍼터링 타깃재와 백킹 튜브의 접합 강도를 측정하는 인장 시험편의 채취 방법을 나타내는 설명도이다.
도 3B 는, 스퍼터링 타깃재와 백킹 튜브의 접합 강도를 측정하는 인장 시험편의 채취 방법을 나타내는 설명도이다.
도 4 는, 본 발명의 일 실시형태에 관련된 원통형 스퍼터링 타깃의 제조 방법을 나타내는 플로도이다.
도 5 는, 본 발명의 다른 실시형태에 관련된 원통형 스퍼터링 타깃의 제조 방법을 나타내는 플로도이다.
도 6 은, 본 발명예 2 에 있어서의 스퍼터링 타깃재와 접합층의 접합 계면의 관찰 결과를 나타내는 사진이다.
도 7 은, 비교예 1 에 있어서의 스퍼터링 타깃재와 접합층의 접합 계면의 관찰 결과를 나타내는 사진이다.
11 : 스퍼터링 타깃재
12 : 백킹 튜브
13 : 접합층
15 : 산화물
Claims (7)
- 원통 형상을 이루는 스퍼터링 타깃재와, 이 스퍼터링 타깃재의 내주측에, In 또는 In 합금으로 이루어지는 접합층을 개재하여 접합된 백킹 튜브를 구비한 원통형 스퍼터링 타깃의 제조 방법으로서,
상기 스퍼터링 타깃재 및 상기 백킹 튜브를 가열하여, 상기 스퍼터링 타깃재의 내주면 및 상기 백킹 튜브의 외주면에, 용융된 In 또는 In 합금으로 이루어지는 솔더재를 도포하여 솔더 하지층을 형성하는 솔더재 도포 공정과,
상기 솔더재 도포 공정 후에 상기 스퍼터링 타깃재 및 상기 백킹 튜브를 냉각시키는 냉각 공정과,
상기 냉각 공정 후에, 상기 솔더 하지층의 표면에 생성된 산화물을 제거하는 산화물 제거 공정과,
상기 산화물 제거 공정 후에, 상기 스퍼터링 타깃재와 상기 백킹 튜브를, In 또는 In 합금으로 이루어지는 솔더재를 사용하여 솔더 접합하는 솔더 접합 공정을 구비하고 있는 것을 특징으로 하는 원통형 스퍼터링 타깃의 제조 방법. - 제 1 항에 있어서,
상기 산화물 제거 공정에서는, 상기 솔더 하지층을 형성한 상기 스퍼터링 타깃재 및 상기 백킹 튜브를, 환원성 분위기하에서 가열 처리함으로써, 상기 솔더 하지층의 표면에 생성된 산화물을 제거하는 것을 특징으로 하는 원통형 스퍼터링 타깃의 제조 방법. - 제 1 항에 있어서,
상기 산화물 제거 공정에서는, 약액을 사용하여 상기 솔더 하지층의 표면에 생성된 산화물을 제거하는 것을 특징으로 하는 원통형 스퍼터링 타깃의 제조 방법. - 제 1 항에 있어서,
상기 산화물 제거 공정에서는, 기계 가공에 의해 상기 솔더 하지층의 표면에 생성된 산화물을 제거하는 것을 특징으로 하는 원통형 스퍼터링 타깃의 제조 방법. - 원통 형상을 이루는 스퍼터링 타깃재와, 이 스퍼터링 타깃재의 내주측에, In 또는 In 합금으로 이루어지는 접합층을 개재하여 접합된 백킹 튜브를 구비한 원통형 스퍼터링 타깃으로서,
상기 스퍼터링 타깃재와 상기 접합층의 접합 계면, 및, 상기 백킹 튜브와 상기 접합층의 접합 계면에 있어서, 산화물의 최대 두께가 300 ㎚ 이하로 되어 있는 것을 특징으로 하는 원통형 스퍼터링 타깃. - 제 5 항에 있어서,
상기 스퍼터링 타깃재와 상기 접합층의 접합 계면, 및, 상기 백킹 튜브와 상기 접합층의 접합 계면에 있어서, 두께 150 ㎚ 이상의 산화물의 길이가 1000 ㎚ 이하로 되어 있는 것을 특징으로 하는 원통형 스퍼터링 타깃. - 제 5 항 또는 제 6 항에 있어서,
상기 스퍼터링 타깃재와 상기 접합층과 상기 백킹 튜브를 적층 방향으로 인장 시험하였을 때의 강도가 4 ㎫ 이상인 것을 특징으로 하는 원통형 스퍼터링 타깃.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
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| JP2017066107A JP2018168417A (ja) | 2017-03-29 | 2017-03-29 | 円筒型スパッタリングターゲットの製造方法、及び、円筒型スパッタリングターゲット |
| JPJP-P-2017-066107 | 2017-03-29 | ||
| PCT/JP2018/010225 WO2018180545A1 (ja) | 2017-03-29 | 2018-03-15 | 円筒型スパッタリングターゲットの製造方法、及び、円筒型スパッタリングターゲット |
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| JP (1) | JP2018168417A (ko) |
| KR (1) | KR20190131029A (ko) |
| CN (1) | CN110402300A (ko) |
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| JP7120111B2 (ja) * | 2019-03-25 | 2022-08-17 | 三菱マテリアル株式会社 | 円筒型スパッタリングターゲットの製造方法 |
| CN111304605A (zh) * | 2020-03-09 | 2020-06-19 | 东莞市欧莱溅射靶材有限公司 | 一种ito旋转靶绑定方法 |
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| JP2014037619A (ja) | 2012-07-18 | 2014-02-27 | Mitsubishi Materials Corp | 円筒形スパッタリングターゲットおよびその製造方法 |
Family Cites Families (12)
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| DE3233215C1 (de) * | 1982-09-07 | 1984-04-19 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum Befestigen von in Scheiben- oder Plattenform vorliegenden Targetmaterialien auf Kuehlteller fuer Aufstaeubanlagen |
| JPH01179767A (ja) * | 1988-01-06 | 1989-07-17 | Hitachi Ltd | セラミックスのはんだ付方法 |
| JP2622716B2 (ja) * | 1988-05-14 | 1997-06-18 | 株式会社ジャパンエナジー | 浸漬ボンディング方法及び装置 |
| JPH06128735A (ja) * | 1992-10-20 | 1994-05-10 | Mitsubishi Kasei Corp | スパッタリングターゲットの製造方法 |
| JPH1046327A (ja) * | 1996-07-31 | 1998-02-17 | Sumitomo Chem Co Ltd | スパッタリングターゲットおよびその製造方法 |
| TW570856B (en) * | 2001-01-18 | 2004-01-11 | Fujitsu Ltd | Solder jointing system, solder jointing method, semiconductor device manufacturing method, and semiconductor device manufacturing system |
| JP3404021B2 (ja) * | 2001-01-18 | 2003-05-06 | 富士通株式会社 | はんだ接合装置 |
| US7079370B2 (en) * | 2003-04-28 | 2006-07-18 | Air Products And Chemicals, Inc. | Apparatus and method for removal of surface oxides via fluxless technique electron attachment and remote ion generation |
| TWI274622B (en) * | 2003-04-28 | 2007-03-01 | Air Prod & Chem | Apparatus and method for removal of surface oxides via fluxless technique involving electron attachment and remote ion generation |
| KR101341705B1 (ko) * | 2010-11-24 | 2013-12-16 | 플란제 에스이 | 스퍼터링용 로터리 타겟의 접합방법 |
| JP2017066107A (ja) | 2015-09-30 | 2017-04-06 | 株式会社東洋新薬 | 皮膚外用組成物および紫外線防護化粧料 |
| JP6376101B2 (ja) * | 2015-10-27 | 2018-08-22 | 住友金属鉱山株式会社 | 円筒形スパッタリングターゲットおよびその製造方法 |
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2017
- 2017-03-29 JP JP2017066107A patent/JP2018168417A/ja active Pending
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2018
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- 2018-03-15 KR KR1020197027149A patent/KR20190131029A/ko not_active Ceased
- 2018-03-15 EP EP18774832.2A patent/EP3604610A4/en not_active Withdrawn
- 2018-03-15 CN CN201880017587.3A patent/CN110402300A/zh active Pending
- 2018-03-21 TW TW107109556A patent/TWI751304B/zh active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014037619A (ja) | 2012-07-18 | 2014-02-27 | Mitsubishi Materials Corp | 円筒形スパッタリングターゲットおよびその製造方法 |
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| TW201839156A (zh) | 2018-11-01 |
| EP3604610A1 (en) | 2020-02-05 |
| JP2018168417A (ja) | 2018-11-01 |
| EP3604610A4 (en) | 2021-01-20 |
| WO2018180545A1 (ja) | 2018-10-04 |
| CN110402300A (zh) | 2019-11-01 |
| TWI751304B (zh) | 2022-01-01 |
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