KR890002995A - 고온가열 스퍼터링 방법 - Google Patents

고온가열 스퍼터링 방법 Download PDF

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Publication number
KR890002995A
KR890002995A KR1019880008221A KR880008221A KR890002995A KR 890002995 A KR890002995 A KR 890002995A KR 1019880008221 A KR1019880008221 A KR 1019880008221A KR 880008221 A KR880008221 A KR 880008221A KR 890002995 A KR890002995 A KR 890002995A
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gas
high temperature
sputtering method
temperature heating
supply means
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KR910007536B1 (ko
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미노루 이노우에
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야마모도 다꾸마
후지쓰가부시끼가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/412—Deposition of metallic or metal-silicide materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2001—Maintaining constant desired temperature

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

내용 없음

Description

고온가열 스퍼터링 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1 도는 종래의 가스협조형 스퍼터링 장치의 개략도. 제 2 도는 종래의 가스협조형 스퍼터링 장치의 문제점을 나타내는 그래프. 제 3 도는 본 발명에 의한 고온 스퍼터링 방법이 수행되는 가스협조형 스퍼터링 장치의 일예를 나타내는 도면.

Claims (8)

  1. 진공실(1)내에 반도체기판(10)과 대항하여 배선재의 타게트(5)와 반도체기판(10)을 위치시키는 단계와, 제 1 가스공급수단(4a)을 통해 가열된 가스를 공급하여 반도체기판(10)을 가열함과 동시에 전기방전을 사용하여 가열된 가스이온들을 전기방전 시킨다음 가열된 가스이온들이 타게트 (5)의 표면과 충돌되도록 하는 단계와, 스퍼터링공정에 의해 타게트(5)의 표면으로부터의 타게트 물질을 반도체기판(10)의 온도상승에 따라 감소되며 또한 그와 동시에 상기 공급가스가 감소되기 전에 사실상 동일온도로 가열되는 공급가스가 감소되는 동일양을 제 2 가스공급수단(4b)을 통해 진공실(1)로 공급하여 반도체기판의 온도가 일정값에 유지되고 또한 진공실(1)의 내압 또한 일정값에 유지되도록 할 수 있는 것이 특징인 고온가열 스퍼터링 방법.
  2. 제 1 항에서, 상기 기판(10)은 실리콘웨이퍼인 것이 특징인 고온가열 스퍼터링 방법.
  3. 제 1 항에서, 상기 타게트 물질은 알루미늄 및 알루미늄 합금중 하나인 것이 특징인 고온가열 스퍼터링 방법.
  4. 제 1 항에서, 상기 제 1 가스공급수단(4b)을 통해 공급되는 상기 가스는 아르곤 가스인 것이 특징인 고온가열 스퍼터링 방법.
  5. 제 1 항에서, 상기 제 2 가스공급수단(4b)을 통해 공급되는 상기 가스는 아르곤 가스인 것이 특징인 고온가열 스퍼터링 방법.
  6. 제 1 항에서, 상기 기판(10)의 온도는 적외선(I.R) 온도계에 의해 검출되는 것이 특징인 고온가열 스퍼터링 방법.
  7. 제 1 항에서, 상기 진공실의 내압은 전기방전 진공지시기(18)에 의해 검출되는 것이 특징인 고온가열 스퍼터링 방법.
  8. 제 1 항에서, 상기 제 1 가스공급수단(4a)을 통해 공급되는 가스의 유량은 17.5/75(SCCM/초)로 감소되고 또한 그와 동시에 상기 제 2 가스공급수단(4b)을 통해 공급되는 가스의 유량은 17.5/75(SCCM/초)로 증가되는 것이 특징인 고온가열 스퍼터링 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019880008221A 1987-07-02 1988-07-02 고온가열 스퍼터링 방법 Expired KR910007536B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP62165798A JPS6411966A (en) 1987-07-02 1987-07-02 High-temperature sputtering method
JP165798 1987-07-02
JP62-165798 1987-07-02

Publications (2)

Publication Number Publication Date
KR890002995A true KR890002995A (ko) 1989-04-12
KR910007536B1 KR910007536B1 (ko) 1991-09-27

Family

ID=15819193

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880008221A Expired KR910007536B1 (ko) 1987-07-02 1988-07-02 고온가열 스퍼터링 방법

Country Status (5)

Country Link
US (1) US4810342A (ko)
EP (1) EP0297521B1 (ko)
JP (1) JPS6411966A (ko)
KR (1) KR910007536B1 (ko)
DE (1) DE3881284T2 (ko)

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US5053625A (en) * 1988-08-04 1991-10-01 Minnesota Mining And Manufacturing Company Surface characterization apparatus and method
US5001939A (en) * 1988-08-04 1991-03-26 Minnesota Mining And Manufacturing Co. Surface characterization apparatus and method
JP2923008B2 (ja) 1989-12-11 1999-07-26 株式会社日立製作所 成膜方法及び成膜装置
US5108570A (en) * 1990-03-30 1992-04-28 Applied Materials, Inc. Multistep sputtering process for forming aluminum layer over stepped semiconductor wafer
JPH0426779A (ja) * 1990-05-18 1992-01-29 Seiko Instr Inc 時計用文字板の製造方法
USH1145H (en) 1990-09-25 1993-03-02 Sematech, Inc. Rapid temperature response wafer chuck
US5376211A (en) * 1990-09-29 1994-12-27 Tokyo Electron Limited Magnetron plasma processing apparatus and processing method
JP2946978B2 (ja) * 1991-11-29 1999-09-13 ソニー株式会社 配線形成方法
US6051490A (en) * 1991-11-29 2000-04-18 Sony Corporation Method of forming wirings
DE4140862A1 (de) * 1991-12-11 1993-06-17 Leybold Ag Kathodenzerstaeubungsanlage
US5451261A (en) * 1992-09-11 1995-09-19 Matsushita Electric Industrial Co., Ltd. Metal film deposition apparatus and metal film deposition method
JPH06251896A (ja) * 1992-12-28 1994-09-09 Hitachi Ltd プラズマ処理方法及び装置
JPH07130852A (ja) * 1993-11-02 1995-05-19 Sony Corp 金属配線材料の形成方法
US5556476A (en) * 1994-02-23 1996-09-17 Applied Materials, Inc. Controlling edge deposition on semiconductor substrates
US5595241A (en) * 1994-10-07 1997-01-21 Sony Corporation Wafer heating chuck with dual zone backplane heating and segmented clamping member
US5961793A (en) * 1996-10-31 1999-10-05 Applied Materials, Inc. Method of reducing generation of particulate matter in a sputtering chamber
TW358964B (en) 1996-11-21 1999-05-21 Applied Materials Inc Method and apparatus for improving sidewall coverage during sputtering in a chamber having an inductively coupled plasma
US6451179B1 (en) 1997-01-30 2002-09-17 Applied Materials, Inc. Method and apparatus for enhancing sidewall coverage during sputtering in a chamber having an inductively coupled plasma
JP2003526191A (ja) 1997-08-13 2003-09-02 アプライド マテリアルズ インコーポレイテッド 半導体デバイス用銅エッチング方法
US6042700A (en) * 1997-09-15 2000-03-28 Applied Materials, Inc. Adjustment of deposition uniformity in an inductively coupled plasma source
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TWI619826B (zh) * 2014-07-31 2018-04-01 愛發科股份有限公司 基板處理裝置及基板處理方法
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Also Published As

Publication number Publication date
KR910007536B1 (ko) 1991-09-27
EP0297521B1 (en) 1993-05-26
EP0297521A1 (en) 1989-01-04
US4810342A (en) 1989-03-07
JPS6411966A (en) 1989-01-17
DE3881284D1 (de) 1993-07-01
DE3881284T2 (de) 1993-09-09

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