KR960020002A - 전압 제어형 발진기 - Google Patents

전압 제어형 발진기 Download PDF

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KR960020002A
KR960020002A KR1019950042964A KR19950042964A KR960020002A KR 960020002 A KR960020002 A KR 960020002A KR 1019950042964 A KR1019950042964 A KR 1019950042964A KR 19950042964 A KR19950042964 A KR 19950042964A KR 960020002 A KR960020002 A KR 960020002A
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South Korea
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voltage controlled
controlled oscillator
strip line
stage
capacitor
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KR0152463B1 (ko
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신지 고마
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무라따 야스따까
가부시끼가이샤 무라따 세이사꾸쇼
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/18—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1231—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more bipolar transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1206—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification
    • H03B5/1221—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising multiple amplification stages connected in cascade
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
    • H03B5/124—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance
    • H03B5/1243—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance the means comprising voltage variable capacitance diodes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
    • H03B2200/003—Circuit elements of oscillators
    • H03B2200/0034—Circuit elements of oscillators including a buffer amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
    • H03B2200/006—Functional aspects of oscillators
    • H03B2200/0086—Functional aspects of oscillators relating to the Q factor or damping of the resonant circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
    • H03B2200/006—Functional aspects of oscillators
    • H03B2200/0088—Reduction of noise
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B2201/00—Aspects of oscillators relating to varying the frequency of the oscillations
    • H03B2201/02—Varying the frequency of the oscillations by electronic means
    • H03B2201/0208—Varying the frequency of the oscillations by electronic means the means being an element with a variable capacitance, e.g. capacitance diode
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B2202/00—Aspects of oscillators relating to reduction of undesired oscillations
    • H03B2202/05—Reduction of undesired oscillations through filtering or through special resonator characteristics
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/18—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance
    • H03B5/1841—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance the frequency-determining element being a strip line resonator
    • H03B5/1847—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance the frequency-determining element being a strip line resonator the active element in the amplifier being a semiconductor device

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  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)

Abstract

본 발명은 소정의 주파수대 범위내의 이동 통신 장치에 사용하기에 적합한 저가의 전압 제어형 발진기에 대한 것이다.
본 발명의 전압 제어형 발진기는, 프린트 배선 기판상에 형성된 공진희로와 발진단을 포함하며, 제어 전압에 기초해서 발진단에 포함된 병렬공진회로의 공진주파수의 변화에 의해 소정의 주파수대 범위내에서 발진단의 발진주파수가 변하도록 작동한다. 병렬공진회로는, 바이어스 저항에 직렬로 접속된 스트립 라인과 스트립 라인에 병렬로 접속된 칩 커패시터를 포함한다. 스트립 라인은 저항의 인덕턴스보다 충분히 큰 인덕턴스를 가지며, 칩 커패시터는 커패시터가 스트립 라인과 함께 소정의 주파수에서 공진하도록 결정된 용량값을 갖는다.

Description

전압 제어형 발진기
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 첫번째 구현예에 따른 전압 제어형 발진기의 구조를 나타내는 회로도이다.

Claims (17)

  1. 전압 제어형 발진기에 있어서; 병렬공진회로를 포함한 공지회로(resonance circuit); 및 입력된 제어 전압에 기초해서 전기한 공진회로의 병렬공진회로의 공진주파수를 변화시켜 발진주파수를 소정의 주파수대 범위 내에서 변화시키는 발진단을 포함하며, 전기한 발진단은 : 전류출력단자를 갖고 있으며, 전기한 병렬공진회로의 전력 손실을 보상하도록 조절되어진 능동소자; 전기한 능동소자의 전류 출력 단자의 직류 바이어스를 규정하는 바이어스 저항; 전기한 바이어스 저항과 직렬로 접속되고, 소정의 주파수대 범위내에서 전기한 바이어스 저항보다 큰 인덕턴스를 갖는 스트립 라인; 및 전기한 스트립 라인과 병렬로 접속되고, 전기한 스트립 라인과 함께 소정의 주파수에서 전기한 칩 커패시터가 공진하도록 용량값이 결정되는 칩 커패시터를 포함함을 특징으로 하는 전압 제어형 발진기.
  2. 제1항에 있어서, 전기한 발진단이 배선을 갖는 프린트 배선 기판상에 형성되고, 전기한 배선 중의 어느 하나가 스트립 라인임을 특징으로 하는 전압 제어형 발진기.
  3. 제1항에 있어서, 전기한 스트립 라인이 900MHz대에서 약 66nH의 인덕턴스를 가짐을 특징으로 하는 전압 제어형 발진기.
  4. 제1항에 있어서, 전기한 스트립 라인과 전기한 칩 커패시터가 바이어스 저항과 접지사이에 인가됨을 특징으로 하는 전압 제어형 발진기.
  5. 제1항에 있어서, 전기한 스트립 라인과 전기한 칩 커패시터가 전기한 능동소자와 바이어스 저항사이에 인가됨을 특징으로 하는 전압 제어형 발진기.
  6. 제1항에 있어서, 전기한 능동소자가 트랜지스터임을 특징으로 하는 전압 제어형 발진기.
  7. 제1항에 있어서, 전기한 스트립 라인이 사행(蛇行)형태, 직선형태, 및 사행과 직선의 결합형태 중에서 어느 한 형태임을 특징으로 하는 전압 제어형 발진기.
  8. 제1항에 있어서, 전기한 스트립 라인이, 15mm의 길이, 66nH의 인덕턴스를 가지며, 전기한 칩 커패시터가 3pF의 용량값을 가짐을 특징으로 하는 전압 제어형 발진기.
  9. 제1항에 있어서, 전기한 스트립 라인과 전기한 칩 커패시터가 병렬공진회로를 형성하고, 스트립 라인의 길이와 칩 커패시터의 용량이 전기한 공진회로가 전기한 소정의 주파수대 범위내에서 교류 모드로 개방되도록 결정됨을 특징으로 하는 전압 제어형 발진기.
  10. 제1항에 있어서, 전기한 소정의 주파수대의 범위가 900MHz 주파수대임을 특징으로 하는 전압 제어형 발진기.
  11. 제1항에 있어서, 전기한 공진회로의 공진주파수가 제어 단자에 인가된 제어 전압에 따라 변하는 것을 특징으로 하는 전압 제어형 발진기.
  12. 제1항에 있어서, 전기한 발진단이 콜피츠 발진기임을 특징으로 하는 전압 제어형 발진기.
  13. 제1항에 있어서, 전기한 발진단이 고주파 바이패스 커패시터를 더 포함함을 특징으로 하는 전압 제어형 발진기.
  14. 제1항에 있어서, 전기한 발진단이 결합 커패시터를 매개로 하여 공진회로에 접속됨을 특징으로 하는 전압 제어형 발진기.
  15. 제1항에 있어서, 전기한 공진회로가 결합 커패시터, 가역 용량 다이오드, 공진 유도자 및 공진 커패시터를 포함함을 특징으로 하는 전압 제어용 발진기.
  16. 제1항에 있어서, 전기한 발진단으로부터 출력된 신호를 증폭하고, 부하변동에 의해 발진단의 발진주파수의 변동을 방지하는 완충단을 더 포함함을 특징으로 하는 전압 제어형 발진기.
  17. 제1항에 있어서, 전기한 출력 단자에 접속된 다음의 단 회로화 정합(整合)하고, 고조파를 억제하는 출력 정합단을 더 포함함을 특징으로 하는 전압 제어형 발진기.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950042964A 1994-11-22 1995-11-22 전압 제어형 발진기 Expired - Fee Related KR0152463B1 (ko)

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Application Number Priority Date Filing Date Title
JP6287830A JPH08148933A (ja) 1994-11-22 1994-11-22 電圧制御型発振器
JP1994-287830 1994-11-22

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KR960020002A true KR960020002A (ko) 1996-06-17
KR0152463B1 KR0152463B1 (ko) 1998-12-15

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JP (1) JPH08148933A (ko)
KR (1) KR0152463B1 (ko)
GB (1) GB2295511B (ko)

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JPH08148933A (ja) 1996-06-07
KR0152463B1 (ko) 1998-12-15
GB2295511A (en) 1996-05-29
US5576667A (en) 1996-11-19
GB9523777D0 (en) 1996-01-24
GB2295511B (en) 1997-01-22

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