KR970077305A - 반도체 기판 에지의 손상 구역을 에칭하는 방법 및 에칭 장치 - Google Patents

반도체 기판 에지의 손상 구역을 에칭하는 방법 및 에칭 장치 Download PDF

Info

Publication number
KR970077305A
KR970077305A KR1019970022988A KR19970022988A KR970077305A KR 970077305 A KR970077305 A KR 970077305A KR 1019970022988 A KR1019970022988 A KR 1019970022988A KR 19970022988 A KR19970022988 A KR 19970022988A KR 970077305 A KR970077305 A KR 970077305A
Authority
KR
South Korea
Prior art keywords
semiconductor substrate
chamber
protective
etching
edge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1019970022988A
Other languages
English (en)
Inventor
요제프 마투니
Original Assignee
로더리히 네테부쉬; 롤프 옴케
지멘스 악티엔게젤샤프트
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 로더리히 네테부쉬; 롤프 옴케, 지멘스 악티엔게젤샤프트 filed Critical 로더리히 네테부쉬; 롤프 옴케
Publication of KR970077305A publication Critical patent/KR970077305A/ko
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/128—Preparing bulk and homogeneous wafers by edge treatment, e.g. chamfering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32633—Baffles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32807—Construction (includes replacing parts of the apparatus)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32899—Multiple chambers, e.g. cluster tools
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H10P72/0424—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)

Abstract

본 발명은 반도체 기판 전면(12)및 기판 후면(13)이 래커링되지 않은 상태에서 반도체 기판 에지(14)를 에칭할 수 있는 장치 및 방법을 제공한다. 본 발명에서 반도체 기판(11)에 진공화 가능한 프로세스 챔버(2)내에 배치된 보호 챔버(3)가 제공된다. 반도체 기판 전면(12) 및 기판 후면(13)은 에칭될 반도체 기판에지(14)에 이르기까지 상기 보호 챔버(3)에 의해 덮어진다. 반도체 기판 에지(14)위로 에칭제가 제공되고, 에칭 생성물 및 과량의 에칭제는 배출된다.

Description

반도체 기판 에지의 손상 구역을 에칭하는 방법 및 에칭 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따른 장치를 개략적으로 도시한 개략도이다.

Claims (14)

  1. a) 반도체 기판 전면(12) 및 기판 후면(13)을 에칭될 기판 에지(14)에 이르기까지 덮고 있는, 프로세스챔버(2)내에 배치된 보호 챔버(3)내에 반도체 기판(11)을 제공하는 단계, b) 반도체 기판의 에지(14) 위에 에칭제가 제공되고, 에칭 생성물 및 과량의 에칭제가 배출되는 단계에 의해, 반도체 기판 전면(12) 및 기판 후면(13)이 래커링되지 않은 상태에서 반도체 기판(11)의 에지(14)영역 위에 있는 손상 구역을 에칭하기 위한 방법.
  2. 제1항에 있어서, 반도체 기판 전면(12) 및 반도체 기판 에지(14) 영역 위에 보호 가스(16)가 리드되는 것을 특징으로 하는 방법.
  3. 제1항 또는 제2항에 있어서, 가스 또는 가스 혼합물을 에칭제(15)로서 사용하는 것을 특징으로 하는 방법.
  4. 제3항에 있어서, 가스 또는 가스 혼합물이 마이크로파 또는 고주파를 통해 플라즈마로 여기되고, 프로세스 챔버(2)는 진공화 되는 것을 특징으로 하는 방법.
  5. 제4항에 있어서, 플라즈마는 프로세스 챔버(2)에 의해 분리된 플라즈마 형성 챔버(25)내에서 형성되는 것을 특징으로 하는 방법.
  6. 제1항 또는 제2항에 있어서, 에칭제(15)로서 에칭 용액이 사용되고, 상기 에칭 용액을 반도체 기판 에지(14)위에 스프레이 하는 것을 특징으로 하는 방법.
  7. 제6항에 있어서, 반도체 기판(11) 및/또는 프로세스 챔버(2)를 ≤100℃의 온도로 가열하는 것을 특징으로 하는 방법.
  8. α) 프로세스 챔버(2), β) 제1보호 챔버(4)를 갖는 반도체 기판 전면(12) 및 제2보호 챔버(5)를 갖는 반도체 기판 후면(13)을 에칭될 반도체 기판 에지(14)까지 덮고 있는, 상기 프로세스 챔버(2)내에 배치된 보호챔버(3),및 에칭제(15)가 반도체 기판 에지(14) 위에 제공될 때 통과하는, 프로세스 챔버(2)에 배치된 에칭제 유입구(6)로 이루어진, 반도체 기판 전면(12) 및 기판 후면(13(이 래커링 되지 않은 상태로 반도체기판(11)의 에지(14) 영역 위에 있는 손상 구역을 에칭하기 위한 장치.
  9. 제8항에 있어서, 제1보호 챔버(4) 영역 및 제2보호 챔버(5) 영역에 각각 하나의 보호 가스 유입구(7)가 배치되고, 에칭 침식으로부터 반도체 기판 전면(12) 및 후면(13)을 보호하기 위해, 보호 가스(16)가 상기 유입구를 통해 래커링 되지 않은 반도체 기판 전면 및 기판 후면 위로 리드되는 것을 특징으로 하는 에칭 장치.
  10. 제9항에 있어서, 제1보호 챔버 영역(4)에는 하나의 헤드 플레이트(9)가 제공될 수 있고, 제2보호 챔버영역(5)에는 하단 플레이트(10)가 제공될 수 있으며, 상기 각 플레이트는 반도체 기판 전면(12) 및 기판 후면(13)의 중앙 영역에 배치된 적어도 하나의 개구(17)를 포함하고, 보호가스가 상기 개구를 통해 유입되는 것을 특징으로 하는 에칭 장치.
  11. 제10항에 있어서, 헤드 플레이트(9)및 하단 플레이트(10)의 외부 에지에 블라인드(18, 19)가 제공되고, 에칭될 반도체 기판 에지(14)를 제한하고 상기 블라인드(18, 19)를 감싸고 있는 외부 블라인드(20, 21)가 프로세스 챔버(2) 내부 쪼는 보호 챔버(4, 5)에 제공되며, 블라인드(18, 19)및 외부 블라인드(20, 21)사이에는 갭(22, 23)이 있어서, 리드된 보호 가스(16)가 상기 갭을 통해 배출되는 것을 특징으로 하는 에칭 장치.
  12. 제8항 내지 제11항 중 어느 한 항에 있어서, 제2보호 챔버 영역에 적어도 3개의 핀이 제공되고, 상기핀 위에 반도체 기판이 올려지는 것을 특징으로 하는 에칭 장치.
  13. 제8항 내지 제11항 중 어느 한 항에 있어서, 프로세스 챔버(2)내에 지지장치(24)가 제공되고, 반도체 기판(11)의 외부 에지(27)가 지지 장치 위에 정확하게 올려지는 것을 특징으로 하는 에칭 장치.
  14. 제8항 내지 제13항 중 어느 한 항에 있어서, 에칭 장치가 다중 챔버 장치의 구성 부품인 것을 특징으로 하는 에칭 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019970022988A 1996-05-31 1997-05-31 반도체 기판 에지의 손상 구역을 에칭하는 방법 및 에칭 장치 Withdrawn KR970077305A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19622015.7 1996-05-31
DE19622015A DE19622015A1 (de) 1996-05-31 1996-05-31 Verfahren zum Ätzen von Zerstörungszonen an einem Halbleitersubstratrand sowie Ätzanlage

Publications (1)

Publication Number Publication Date
KR970077305A true KR970077305A (ko) 1997-12-12

Family

ID=7795879

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019970022988A Withdrawn KR970077305A (ko) 1996-05-31 1997-05-31 반도체 기판 에지의 손상 구역을 에칭하는 방법 및 에칭 장치

Country Status (6)

Country Link
US (1) US5945351A (ko)
EP (1) EP0810641A3 (ko)
JP (1) JP2989565B2 (ko)
KR (1) KR970077305A (ko)
DE (1) DE19622015A1 (ko)
TW (1) TW358978B (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100719718B1 (ko) * 2005-12-28 2007-05-17 동부일렉트로닉스 주식회사 기판 주변부 습식 식각 방법 및 장치

Families Citing this family (102)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6398975B1 (en) 1997-09-24 2002-06-04 Interuniversitair Microelektronica Centrum (Imec) Method and apparatus for localized liquid treatment of the surface of a substrate
KR20000005870A (ko) * 1998-06-11 2000-01-25 히로시 오우라 전자빔노출장치를위한편향개구어레이를제작하는방법,상기개구어레이를제작하기위한습식에칭방법및장치,및상기개구어레이를갖는전자빔노출장치
US7527698B2 (en) * 1998-09-23 2009-05-05 Interuniversitair Microelektronica Centrum (Imec, Vzw) Method and apparatus for removing a liquid from a surface of a substrate
JP2000186000A (ja) * 1998-12-22 2000-07-04 Speedfam-Ipec Co Ltd シリコンウェーハ加工方法およびその装置
ATE211855T1 (de) * 1999-04-28 2002-01-15 Sez Semiconduct Equip Zubehoer Vorrichtung und verfahren zur flüssigkeitsbehandlung von scheibenförmigen gegenständen
EP1168419B1 (en) * 2000-06-19 2008-10-01 Interuniversitair Micro-Elektronica Centrum Method and apparatus for localized liquid treatment of the surface of a substrate
US7234477B2 (en) * 2000-06-30 2007-06-26 Lam Research Corporation Method and apparatus for drying semiconductor wafer surfaces using a plurality of inlets and outlets held in close proximity to the wafer surfaces
US7000622B2 (en) * 2002-09-30 2006-02-21 Lam Research Corporation Methods and systems for processing a bevel edge of a substrate using a dynamic liquid meniscus
US7584761B1 (en) 2000-06-30 2009-09-08 Lam Research Corporation Wafer edge surface treatment with liquid meniscus
US6482749B1 (en) 2000-08-10 2002-11-19 Seh America, Inc. Method for etching a wafer edge using a potassium-based chemical oxidizer in the presence of hydrofluoric acid
US6465353B1 (en) * 2000-09-29 2002-10-15 International Rectifier Corporation Process of thinning and blunting semiconductor wafer edge and resulting wafer
EP1202326B1 (de) 2000-10-31 2004-01-02 Sez Ag Vorrichtung zur Flüssigkeitsbehandlung von scheibenförmigen Gegenständen
US7029597B2 (en) * 2001-01-23 2006-04-18 Lorin Industries, Inc. Anodized aluminum etching process and related apparatus
JP2003124180A (ja) * 2001-10-16 2003-04-25 Ebara Corp 基板処理装置
US20070066076A1 (en) * 2005-09-19 2007-03-22 Bailey Joel B Substrate processing method and apparatus using a combustion flame
US6936546B2 (en) * 2002-04-26 2005-08-30 Accretech Usa, Inc. Apparatus for shaping thin films in the near-edge regions of in-process semiconductor substrates
US7638727B2 (en) 2002-05-08 2009-12-29 Btu International Inc. Plasma-assisted heat treatment
US7498066B2 (en) 2002-05-08 2009-03-03 Btu International Inc. Plasma-assisted enhanced coating
US7465362B2 (en) 2002-05-08 2008-12-16 Btu International, Inc. Plasma-assisted nitrogen surface-treatment
EP1501631A4 (en) 2002-05-08 2009-07-22 Btu Int PLASMA PRODUCTION OF CARBON STRUCTURES
US7445817B2 (en) 2002-05-08 2008-11-04 Btu International Inc. Plasma-assisted formation of carbon structures
US7560657B2 (en) 2002-05-08 2009-07-14 Btu International Inc. Plasma-assisted processing in a manufacturing line
US7494904B2 (en) 2002-05-08 2009-02-24 Btu International, Inc. Plasma-assisted doping
US7432470B2 (en) 2002-05-08 2008-10-07 Btu International, Inc. Surface cleaning and sterilization
US7497922B2 (en) 2002-05-08 2009-03-03 Btu International, Inc. Plasma-assisted gas production
US7614411B2 (en) * 2002-09-30 2009-11-10 Lam Research Corporation Controls of ambient environment during wafer drying using proximity head
US7153400B2 (en) * 2002-09-30 2006-12-26 Lam Research Corporation Apparatus and method for depositing and planarizing thin films of semiconductor wafers
US8236382B2 (en) * 2002-09-30 2012-08-07 Lam Research Corporation Proximity substrate preparation sequence, and method, apparatus, and system for implementing the same
US7632376B1 (en) 2002-09-30 2009-12-15 Lam Research Corporation Method and apparatus for atomic layer deposition (ALD) in a proximity system
US6988327B2 (en) 2002-09-30 2006-01-24 Lam Research Corporation Methods and systems for processing a substrate using a dynamic liquid meniscus
US6988326B2 (en) * 2002-09-30 2006-01-24 Lam Research Corporation Phobic barrier meniscus separation and containment
US7069937B2 (en) * 2002-09-30 2006-07-04 Lam Research Corporation Vertical proximity processor
US6954993B1 (en) * 2002-09-30 2005-10-18 Lam Research Corporation Concentric proximity processing head
US7293571B2 (en) * 2002-09-30 2007-11-13 Lam Research Corporation Substrate proximity processing housing and insert for generating a fluid meniscus
US7389783B2 (en) * 2002-09-30 2008-06-24 Lam Research Corporation Proximity meniscus manifold
US7997288B2 (en) * 2002-09-30 2011-08-16 Lam Research Corporation Single phase proximity head having a controlled meniscus for treating a substrate
US7367345B1 (en) 2002-09-30 2008-05-06 Lam Research Corporation Apparatus and method for providing a confined liquid for immersion lithography
US7513262B2 (en) * 2002-09-30 2009-04-07 Lam Research Corporation Substrate meniscus interface and methods for operation
US7383843B2 (en) * 2002-09-30 2008-06-10 Lam Research Corporation Method and apparatus for processing wafer surfaces using thin, high velocity fluid layer
US7198055B2 (en) * 2002-09-30 2007-04-03 Lam Research Corporation Meniscus, vacuum, IPA vapor, drying manifold
US7045018B2 (en) * 2002-09-30 2006-05-16 Lam Research Corporation Substrate brush scrubbing and proximity cleaning-drying sequence using compatible chemistries, and method, apparatus, and system for implementing the same
US7252097B2 (en) * 2002-09-30 2007-08-07 Lam Research Corporation System and method for integrating in-situ metrology within a wafer process
US7093375B2 (en) * 2002-09-30 2006-08-22 Lam Research Corporation Apparatus and method for utilizing a meniscus in substrate processing
US7735451B2 (en) * 2002-11-15 2010-06-15 Ebara Corporation Substrate processing method and apparatus
US7189940B2 (en) * 2002-12-04 2007-03-13 Btu International Inc. Plasma-assisted melting
DE10302611B4 (de) * 2003-01-23 2011-07-07 Siltronic AG, 81737 Polierte Halbleiterscheibe und Verfahren zu deren Herstellung und Anordnung bestehend aus einer Halbleiterscheibe und einem Schild
CN101145508B (zh) * 2003-03-06 2010-06-16 积水化学工业株式会社 等离子加工装置和方法
US7078344B2 (en) * 2003-03-14 2006-07-18 Lam Research Corporation Stress free etch processing in combination with a dynamic liquid meniscus
JP4122004B2 (ja) 2003-05-12 2008-07-23 株式会社ソスル プラズマエッチングチャンバーと、これを用いたプラズマエッチングシステ厶
US7675000B2 (en) * 2003-06-24 2010-03-09 Lam Research Corporation System method and apparatus for dry-in, dry-out, low defect laser dicing using proximity technology
US7913703B1 (en) 2003-06-27 2011-03-29 Lam Research Corporation Method and apparatus for uniformly applying a multi-phase cleaning solution to a substrate
US7737097B2 (en) * 2003-06-27 2010-06-15 Lam Research Corporation Method for removing contamination from a substrate and for making a cleaning solution
US8522801B2 (en) * 2003-06-27 2013-09-03 Lam Research Corporation Method and apparatus for cleaning a semiconductor substrate
US7648584B2 (en) * 2003-06-27 2010-01-19 Lam Research Corporation Method and apparatus for removing contamination from substrate
US8316866B2 (en) * 2003-06-27 2012-11-27 Lam Research Corporation Method and apparatus for cleaning a semiconductor substrate
US20040261823A1 (en) * 2003-06-27 2004-12-30 Lam Research Corporation Method and apparatus for removing a target layer from a substrate using reactive gases
US7799141B2 (en) * 2003-06-27 2010-09-21 Lam Research Corporation Method and system for using a two-phases substrate cleaning compound
US7867565B2 (en) 2003-06-30 2011-01-11 Imec Method for coating substrates
US7170190B1 (en) 2003-12-16 2007-01-30 Lam Research Corporation Apparatus for oscillating a head and methods for implementing the same
US7353560B2 (en) * 2003-12-18 2008-04-08 Lam Research Corporation Proximity brush unit apparatus and method
US7350315B2 (en) * 2003-12-22 2008-04-01 Lam Research Corporation Edge wheel dry manifold
US8043441B2 (en) * 2005-06-15 2011-10-25 Lam Research Corporation Method and apparatus for cleaning a substrate using non-Newtonian fluids
US8522799B2 (en) * 2005-12-30 2013-09-03 Lam Research Corporation Apparatus and system for cleaning a substrate
US7862662B2 (en) * 2005-12-30 2011-01-04 Lam Research Corporation Method and material for cleaning a substrate
US7416370B2 (en) * 2005-06-15 2008-08-26 Lam Research Corporation Method and apparatus for transporting a substrate using non-Newtonian fluid
US7568490B2 (en) * 2003-12-23 2009-08-04 Lam Research Corporation Method and apparatus for cleaning semiconductor wafers using compressed and/or pressurized foams, bubbles, and/or liquids
US8323420B2 (en) 2005-06-30 2012-12-04 Lam Research Corporation Method for removing material from semiconductor wafer and apparatus for performing the same
US8062471B2 (en) * 2004-03-31 2011-11-22 Lam Research Corporation Proximity head heating method and apparatus
US7323080B2 (en) * 2004-05-04 2008-01-29 Semes Co., Ltd. Apparatus for treating substrate
KR100532354B1 (ko) * 2004-05-31 2005-11-30 삼성전자주식회사 식각 영역 조절 장치 및 웨이퍼 에지 식각 장치 그리고웨이퍼 에지 식각 방법
US7003899B1 (en) * 2004-09-30 2006-02-28 Lam Research Corporation System and method for modulating flow through multiple ports in a proximity head
US7089687B2 (en) * 2004-09-30 2006-08-15 Lam Research Corporation Wafer edge wheel with drying function
KR100611727B1 (ko) * 2005-06-24 2006-08-10 주식회사 씨싸이언스 웨이퍼 건식 식각용 전극 및 건식 식각용 챔버
KR101149332B1 (ko) * 2005-07-29 2012-05-23 주성엔지니어링(주) 플라즈마 식각 장치
KR101218114B1 (ko) * 2005-08-04 2013-01-18 주성엔지니어링(주) 플라즈마 식각 장치
EP2428557A1 (en) * 2005-12-30 2012-03-14 LAM Research Corporation Cleaning solution
US8480810B2 (en) * 2005-12-30 2013-07-09 Lam Research Corporation Method and apparatus for particle removal
US7928366B2 (en) * 2006-10-06 2011-04-19 Lam Research Corporation Methods of and apparatus for accessing a process chamber using a dual zone gas injector with improved optical access
US8813764B2 (en) 2009-05-29 2014-08-26 Lam Research Corporation Method and apparatus for physical confinement of a liquid meniscus over a semiconductor wafer
US20080148595A1 (en) * 2006-12-20 2008-06-26 Lam Research Corporation Method and apparatus for drying substrates using a surface tensions reducing gas
US8146902B2 (en) * 2006-12-21 2012-04-03 Lam Research Corporation Hybrid composite wafer carrier for wet clean equipment
US7943007B2 (en) * 2007-01-26 2011-05-17 Lam Research Corporation Configurable bevel etcher
US7858898B2 (en) * 2007-01-26 2010-12-28 Lam Research Corporation Bevel etcher with gap control
US8398778B2 (en) 2007-01-26 2013-03-19 Lam Research Corporation Control of bevel etch film profile using plasma exclusion zone rings larger than the wafer diameter
US8580078B2 (en) * 2007-01-26 2013-11-12 Lam Research Corporation Bevel etcher with vacuum chuck
US7897213B2 (en) * 2007-02-08 2011-03-01 Lam Research Corporation Methods for contained chemical surface treatment
US7975708B2 (en) * 2007-03-30 2011-07-12 Lam Research Corporation Proximity head with angled vacuum conduit system, apparatus and method
US8464736B1 (en) 2007-03-30 2013-06-18 Lam Research Corporation Reclaim chemistry
US8388762B2 (en) * 2007-05-02 2013-03-05 Lam Research Corporation Substrate cleaning technique employing multi-phase solution
US8141566B2 (en) * 2007-06-19 2012-03-27 Lam Research Corporation System, method and apparatus for maintaining separation of liquids in a controlled meniscus
US8211846B2 (en) 2007-12-14 2012-07-03 Lam Research Group Materials for particle removal by single-phase and two-phase media
CN101981664B (zh) * 2008-03-31 2013-08-28 Memc电子材料有限公司 蚀刻硅晶片边缘的方法
EP2359390A1 (en) 2008-11-19 2011-08-24 MEMC Electronic Materials, Inc. Method and system for stripping the edge of a semiconductor wafer
DE102009011622B4 (de) * 2009-03-04 2018-10-25 Siltronic Ag Epitaxierte Siliciumscheibe und Verfahren zur Herstellung einer epitaxierten Siliciumscheibe
US20120175343A1 (en) 2011-01-12 2012-07-12 Siltronic Corporation Apparatus and method for etching a wafer edge
KR101876454B1 (ko) 2011-09-14 2018-07-11 삼성디스플레이 주식회사 진공 롤투롤 장치 및 롤 타입 기판 제조 방법
US8853054B2 (en) 2012-03-06 2014-10-07 Sunedison Semiconductor Limited Method of manufacturing silicon-on-insulator wafers
KR101377996B1 (ko) * 2012-10-08 2014-03-27 주식회사 코디에스 플라즈마 에칭 장치 및 마스크 장치
US10636628B2 (en) 2017-09-11 2020-04-28 Applied Materials, Inc. Method for cleaning a process chamber
US10600624B2 (en) 2017-03-10 2020-03-24 Applied Materials, Inc. System and method for substrate processing chambers
CN111341704B (zh) * 2020-05-20 2020-08-25 西安奕斯伟硅片技术有限公司 一种硅片背封层的边缘去除装置及边缘去除方法
US20240128061A1 (en) * 2022-10-13 2024-04-18 Applied Materials, Inc. Apparatus design for film removal from the bevel and edge of the substrate

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3027934A1 (de) * 1980-07-23 1982-02-25 Siemens AG, 1000 Berlin und 8000 München Verfahren zur einseitigen aetzung von halbleiterscheiben
JPS5898925A (ja) * 1981-12-08 1983-06-13 Matsushita Electric Ind Co Ltd 半導体装置の製造方法およびその製造装置
JPH01196832A (ja) * 1988-02-02 1989-08-08 Toshiba Corp 半導体基板のエッチング方法
US4857142A (en) * 1988-09-22 1989-08-15 Fsi International, Inc. Method and apparatus for controlling simultaneous etching of front and back sides of wafers
JPH02192717A (ja) * 1989-01-20 1990-07-30 Sharp Corp レジスト除去装置
JPH07142449A (ja) * 1993-11-22 1995-06-02 Kawasaki Steel Corp プラズマエッチング装置
JPH07307335A (ja) * 1994-02-22 1995-11-21 Siemens Ag 半導体基板上における高密度集積回路の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100719718B1 (ko) * 2005-12-28 2007-05-17 동부일렉트로닉스 주식회사 기판 주변부 습식 식각 방법 및 장치

Also Published As

Publication number Publication date
EP0810641A2 (de) 1997-12-03
US5945351A (en) 1999-08-31
JP2989565B2 (ja) 1999-12-13
EP0810641A3 (de) 1998-05-13
TW358978B (en) 1999-05-21
DE19622015A1 (de) 1997-12-04
JPH1056006A (ja) 1998-02-24

Similar Documents

Publication Publication Date Title
KR970077305A (ko) 반도체 기판 에지의 손상 구역을 에칭하는 방법 및 에칭 장치
KR0124497B1 (ko) 드라이 에칭 방법 및 그 장치
US4442338A (en) Plasma etching apparatus
EP0392134A3 (en) Process for treatment of backside of semiconductor wafer
JPH0729885A (ja) 半導体製造装置及びそれを使用する半導体製造方法
KR940011662A (ko) 이방성 에칭방법 및 장치
EP0418540A2 (en) Dry etching method
KR970077289A (ko) 반도체 기판의 에칭 방법 및 에칭 장치
KR930018664A (ko) 드라이 에칭방법
JPH07272897A (ja) マイクロ波プラズマ装置
WO2004026096A3 (en) Viewing window cleaning apparatus
KR950034547A (ko) 반도체 기판 앞면의 보호코팅없이 플라즈마를 이용한 기판 후면의 에칭방법
JPS56105480A (en) Plasma etching method
JPS56278A (en) Method and apparatus for plasma ethcing of aluminum
JPS5691432A (en) Method for drying semiconductor substrate
US20080196243A1 (en) Device for Coupling Electromagnetic Radiation from a Source into a Microwave Chamber
ATE250279T1 (de) Vorrichtung zum beschichten von plattenförmigen substraten
JPS5743426A (en) Plasma treating apparatus
JPH0734253A (ja) マイクロ波プラズマ処理装置
KR980005722A (ko) 반도체 건식식각챔버의 습식세정방법
RU2051442C1 (ru) Устройство для плазмохимической обработки обратной стороны полупроводниковой пластины с одновременной защитой лицевой
JPS648625A (en) Detection of end point of gas etching
GB2008464A (en) Improvements in methods of operating and treating evacuated chambers
JPS5421278A (en) Plasma etching method
JPH07221071A (ja) ドライエッチング装置

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

PC1203 Withdrawal of no request for examination

St.27 status event code: N-1-6-B10-B12-nap-PC1203

WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid
R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000