MD2714F1 - Procedeu de obtinere a structurilor semiconductoare poroase - Google Patents

Procedeu de obtinere a structurilor semiconductoare poroase Download PDF

Info

Publication number
MD2714F1
MD2714F1 MDA20040250A MD20040250A MD2714F1 MD 2714 F1 MD2714 F1 MD 2714F1 MD A20040250 A MDA20040250 A MD A20040250A MD 20040250 A MD20040250 A MD 20040250A MD 2714 F1 MD2714 F1 MD 2714F1
Authority
MD
Moldova
Prior art keywords
semiconductor structures
porous semiconductor
onto
semiconductor
obtaining
Prior art date
Application number
MDA20040250A
Other languages
English (en)
Other versions
MD2714G2 (ro
Inventor
Eduard MONAICO
Ion Tighineanu
Veaceslav Ursachi
Original Assignee
Ion Tighineanu
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ion Tighineanu filed Critical Ion Tighineanu
Priority to MDA20040250A priority Critical patent/MD2714G2/ro
Publication of MD2714F1 publication Critical patent/MD2714F1/ro
Publication of MD2714G2 publication Critical patent/MD2714G2/ro

Links

Landscapes

  • Drying Of Semiconductors (AREA)

Abstract

Inventia se refera la tehnologia de producere a semiconductorilor, in special la procedeele de obtinere a structurilor semiconductoare poroase. Procedeul de obtinere a structurilor semiconductoare poroase consta in aceea ca pe suprafata semiconductorului se depune o masca, pe regiunile neacoperite se implanteaza ioni de energie inalta, apoi masca se inlatura, iar suprafata semiconductorului se supune corodarii electrochimice. Noutatea consta in aceea ca, inainte de corodare, pe suprafata semiconductorului se depune un strat din material fotorezist. ŕ
MDA20040250A 2004-10-19 2004-10-19 Procedeu de obtinere a structurilor semiconductoare poroase MD2714G2 (ro)

Priority Applications (1)

Application Number Priority Date Filing Date Title
MDA20040250A MD2714G2 (ro) 2004-10-19 2004-10-19 Procedeu de obtinere a structurilor semiconductoare poroase

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
MDA20040250A MD2714G2 (ro) 2004-10-19 2004-10-19 Procedeu de obtinere a structurilor semiconductoare poroase

Publications (2)

Publication Number Publication Date
MD2714F1 true MD2714F1 (ro) 2005-02-28
MD2714G2 MD2714G2 (ro) 2005-10-31

Family

ID=34374323

Family Applications (1)

Application Number Title Priority Date Filing Date
MDA20040250A MD2714G2 (ro) 2004-10-19 2004-10-19 Procedeu de obtinere a structurilor semiconductoare poroase

Country Status (1)

Country Link
MD (1) MD2714G2 (ro)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD3811G2 (ro) * 2007-11-06 2009-08-31 Институт Прикладной Физики Академии Наук Молдовы Procedeu de obţinere a zonelor nanostructurale semiconductoare
MD152Z (ro) * 2009-03-10 2010-09-30 Институт Прикладной Физики Академии Наук Молдовы Procedeu de formare a unei microstructuri tridimensionale
MD193Z (ro) * 2009-06-04 2010-11-30 Институт Прикладной Физики Академии Наук Молдовы Procedeu de obţinere a peliculei polisulfidice

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4536866B2 (ja) * 1999-04-27 2010-09-01 キヤノン株式会社 ナノ構造体及びその製造方法
US6277662B1 (en) * 1999-06-03 2001-08-21 Seiichi Nagata Silicon substrate and forming method thereof
MD2536G2 (ro) * 2004-04-28 2005-03-31 Ион ТИГИНЯНУ Procedeu de obtinere a structurilor semiconductoare poroase

Also Published As

Publication number Publication date
MD2714G2 (ro) 2005-10-31

Similar Documents

Publication Publication Date Title
WO2008150930A3 (en) Masking high-aspect ratio structures
TW200943002A (en) Production method for semiconductor device
TW200603342A (en) Technique for creating different mechanical stress in different channel regions by forming an etch stop layer having differently modified intrinsic stress
SG136060A1 (en) A method of fabricating a thin film
TW200629416A (en) Semiconductor device and fabrication method thereof
SG131948A1 (en) Self-pattering of photo-active dielectric materials for interconnect isolation
TW200707554A (en) Offset spacers for CMOS transistors
TW200611323A (en) Method and system for etching a film stack
MD2714G2 (ro) Procedeu de obtinere a structurilor semiconductoare poroase
TW200713569A (en) Bottle-shaped trench and method of fabricating the same
FR2878535B1 (fr) Procede de realisation d'un substrat demontable
TW200710965A (en) Method of forming align key in well structure formation process and method of forming element isolation structure using the align key
MD2536G2 (ro) Procedeu de obtinere a structurilor semiconductoare poroase
TW200802621A (en) Method of fabricating recess gate in semiconductor device
TW200614384A (en) Impurity introducing method
TW200607010A (en) Method of fabricating a gate oxide layer
TW200644068A (en) Manufacturing method for gate dielectric layer
MD2610F1 (ro) Procedeu de obtinere a suprafetei poroase a semiconductorului
TW200724709A (en) A method for forming a mask pattern for ion-implantation
WO2006066882A3 (de) Flächiges implantat und verfahren zu seiner herstellung
TW200627520A (en) Pattern forming method, lower layer film forming composition and manufacturing method of semiconductor device
TW200733189A (en) Method for manufacturing semiconductor device
MD2585G2 (ro) Procedeu de obţinere a nanostructurilor semiconductoare
TW200715478A (en) Method of fabricating a bottle-shaped trench
AU2003299368A1 (en) Method of the production of cavities in a silicon sheet

Legal Events

Date Code Title Description
KA4A Patent for invention lapsed due to non-payment of fees (with right of restoration)
MM4A Patent for invention definitely lapsed due to non-payment of fees