MD3811G2 - Procedeu de obţinere a zonelor nanostructurale semiconductoare - Google Patents

Procedeu de obţinere a zonelor nanostructurale semiconductoare

Info

Publication number
MD3811G2
MD3811G2 MDA20070303A MD20070303A MD3811G2 MD 3811 G2 MD3811 G2 MD 3811G2 MD A20070303 A MDA20070303 A MD A20070303A MD 20070303 A MD20070303 A MD 20070303A MD 3811 G2 MD3811 G2 MD 3811G2
Authority
MD
Moldova
Prior art keywords
nanostructural
zones
semiconductor
nacl solution
obtaining semiconductor
Prior art date
Application number
MDA20070303A
Other languages
English (en)
Russian (ru)
Other versions
MD3811F2 (ro
Inventor
Эдуард МОНАЙКО
Ион ТИГИНЯНУ
Вячеслав УРСАКИ
Виталие ПОСТОЛАКЕ
Original Assignee
Институт Прикладной Физики Академии Наук Молдовы
Технический университет Молдовы
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Институт Прикладной Физики Академии Наук Молдовы, Технический университет Молдовы filed Critical Институт Прикладной Физики Академии Наук Молдовы
Priority to MDA20070303A priority Critical patent/MD3811G2/ro
Publication of MD3811F2 publication Critical patent/MD3811F2/ro
Publication of MD3811G2 publication Critical patent/MD3811G2/ro

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

Invenţia se referă la producerea semiconductorilor.Procedeul de obţinere a zonelor nanostructurale semiconductoare include depunerea pe una din feţele unui cristal semiconductor a unei măşti cu o porţiune deschisă, corodarea electrochimică la anodizare într-o soluţie apoasă de NaCl şi înlăturarea măştii.Rezultatul invenţiei constă în obţinerea zonelor nanostructurale semiconductoare cu morfologia dirijată de concentraţia soluţiei de NaCl şi de parametrii electrici aplicaţi, utilizând soluţia de NaCl care nu prezintă pericol pentru sănătatea personalului sau pentru mediul ambiant.
MDA20070303A 2007-11-06 2007-11-06 Procedeu de obţinere a zonelor nanostructurale semiconductoare MD3811G2 (ro)

Priority Applications (1)

Application Number Priority Date Filing Date Title
MDA20070303A MD3811G2 (ro) 2007-11-06 2007-11-06 Procedeu de obţinere a zonelor nanostructurale semiconductoare

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
MDA20070303A MD3811G2 (ro) 2007-11-06 2007-11-06 Procedeu de obţinere a zonelor nanostructurale semiconductoare

Publications (2)

Publication Number Publication Date
MD3811F2 MD3811F2 (ro) 2009-01-31
MD3811G2 true MD3811G2 (ro) 2009-08-31

Family

ID=40347779

Family Applications (1)

Application Number Title Priority Date Filing Date
MDA20070303A MD3811G2 (ro) 2007-11-06 2007-11-06 Procedeu de obţinere a zonelor nanostructurale semiconductoare

Country Status (1)

Country Link
MD (1) MD3811G2 (ro)

Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1056205A (en) * 1964-07-28 1967-01-25 Ibm Improvements relating to methods of treating semiconductor elements
US6277662B1 (en) * 1999-06-03 2001-08-21 Seiichi Nagata Silicon substrate and forming method thereof
RU2214359C1 (ru) * 2002-09-05 2003-10-20 Санкт-Петербургский государственный институт точной механики и оптики (технический университет) Способ формирования решетки нанокластеров кремния на структурированной подложке
MD2556G2 (ro) * 2004-06-01 2005-03-31 Ион ТИГИНЯНУ Procedeu de obtinere a nanostructurilor semiconductoare
MD2536G2 (ro) * 2004-04-28 2005-03-31 Ион ТИГИНЯНУ Procedeu de obtinere a structurilor semiconductoare poroase
MD2585G2 (ro) * 2004-06-01 2005-05-31 Ион ТИГИНЯНУ Procedeu de obţinere a nanostructurilor semiconductoare
MD2610G2 (ro) * 2004-04-28 2005-06-30 Ион ТИГИНЯНУ Procedeu de obţinere a suprafeţei poroase a semiconductorului
MD2646G2 (ro) * 2004-04-28 2005-08-31 Ион ТИГИНЯНУ Procedeu de obţinere a lentilelor în baza semiconductoarelor cu gradient al indicelui de refracţie
MD2714G2 (ro) * 2004-10-19 2005-10-31 Ион ТИГИНЯНУ Procedeu de obtinere a structurilor semiconductoare poroase
MD2804G2 (ro) * 2004-10-19 2006-02-28 Ион ТИГИНЯНУ Procedeu de obţinere a nanocompozitului
MD2982G2 (ro) * 2005-08-10 2006-10-31 Институт Прикладной Физики Академии Наук Молдовы Procedeu de obţinere a nanostructurilor semiconductoare
RU2300158C1 (ru) * 2005-09-29 2007-05-27 Институт микроэлектроники и информатики РАН Способ формирования субмикронной и нанометровой структуры
MD3691B1 (ro) * 2007-05-10 2008-08-31 Societatea Pe Actiuni Institutul De Cercetari Stiintifice "Eliri" Procedeu de confectionare a unei nanostructuri filiforme

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1056205A (en) * 1964-07-28 1967-01-25 Ibm Improvements relating to methods of treating semiconductor elements
US6277662B1 (en) * 1999-06-03 2001-08-21 Seiichi Nagata Silicon substrate and forming method thereof
RU2214359C1 (ru) * 2002-09-05 2003-10-20 Санкт-Петербургский государственный институт точной механики и оптики (технический университет) Способ формирования решетки нанокластеров кремния на структурированной подложке
MD2610G2 (ro) * 2004-04-28 2005-06-30 Ион ТИГИНЯНУ Procedeu de obţinere a suprafeţei poroase a semiconductorului
MD2536G2 (ro) * 2004-04-28 2005-03-31 Ион ТИГИНЯНУ Procedeu de obtinere a structurilor semiconductoare poroase
MD2646G2 (ro) * 2004-04-28 2005-08-31 Ион ТИГИНЯНУ Procedeu de obţinere a lentilelor în baza semiconductoarelor cu gradient al indicelui de refracţie
MD2556G2 (ro) * 2004-06-01 2005-03-31 Ион ТИГИНЯНУ Procedeu de obtinere a nanostructurilor semiconductoare
MD2585G2 (ro) * 2004-06-01 2005-05-31 Ион ТИГИНЯНУ Procedeu de obţinere a nanostructurilor semiconductoare
MD2714G2 (ro) * 2004-10-19 2005-10-31 Ион ТИГИНЯНУ Procedeu de obtinere a structurilor semiconductoare poroase
MD2804G2 (ro) * 2004-10-19 2006-02-28 Ион ТИГИНЯНУ Procedeu de obţinere a nanocompozitului
MD2982G2 (ro) * 2005-08-10 2006-10-31 Институт Прикладной Физики Академии Наук Молдовы Procedeu de obţinere a nanostructurilor semiconductoare
RU2300158C1 (ru) * 2005-09-29 2007-05-27 Институт микроэлектроники и информатики РАН Способ формирования субмикронной и нанометровой структуры
MD3691B1 (ro) * 2007-05-10 2008-08-31 Societatea Pe Actiuni Institutul De Cercetari Stiintifice "Eliri" Procedeu de confectionare a unei nanostructuri filiforme

Also Published As

Publication number Publication date
MD3811F2 (ro) 2009-01-31

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