MD3320F1 - Procedeu de obtinere a oxidului de zinc nanostructurat - Google Patents

Procedeu de obtinere a oxidului de zinc nanostructurat Download PDF

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Publication number
MD3320F1
MD3320F1 MDA20060100A MD20060100A MD3320F1 MD 3320 F1 MD3320 F1 MD 3320F1 MD A20060100 A MDA20060100 A MD A20060100A MD 20060100 A MD20060100 A MD 20060100A MD 3320 F1 MD3320 F1 MD 3320F1
Authority
MD
Moldova
Prior art keywords
source
zinc oxide
obtaining
oxide nanostructures
mixture
Prior art date
Application number
MDA20060100A
Other languages
English (en)
Other versions
MD3320G2 (ro
Inventor
Emil Rusu
Veaceslav Ursachi
Gheorghe Stratan
Alexandru Burlacu
Ion Tighineanu
Leonid Culiuc
Original Assignee
Institutul De Fizica Aplicata Al Academiei De Stiinte A Moldovei
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Institutul De Fizica Aplicata Al Academiei De Stiinte A Moldovei filed Critical Institutul De Fizica Aplicata Al Academiei De Stiinte A Moldovei
Priority to MDA20060100A priority Critical patent/MD3320G2/ro
Publication of MD3320F1 publication Critical patent/MD3320F1/ro
Publication of MD3320G2 publication Critical patent/MD3320G2/ro

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  • Inorganic Compounds Of Heavy Metals (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)

Abstract

Inventia se refera la tehnologia de obtinere a materialelor oxidice, in special la procedeele de formare a nanostructurilor de ZnO cu diverse forme morfologice (nanofire, nanotuburi, nanoace, nanobaghete etc.). Esenta inventiei consta in obtinerea nanostructurilor de ZnO pe suporturi de siliciu sausafir, realizand evaporarea dintr-o sursa, care consta dintr-un amestec de pulberi ZnO si carbune. Noutatea inventiei consta in realizarea evaporariiamestecului in mediul ambiant, totodata temperatura sursei este mentinuta intre 900…1450°C, iar gradientul de temperatura dintre sursa si suport estestabilit in marime de 10…120°C.
MDA20060100A 2006-03-24 2006-03-24 Procedeu de obţinere a oxidului de zinc nanostructurat MD3320G2 (ro)

Priority Applications (1)

Application Number Priority Date Filing Date Title
MDA20060100A MD3320G2 (ro) 2006-03-24 2006-03-24 Procedeu de obţinere a oxidului de zinc nanostructurat

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
MDA20060100A MD3320G2 (ro) 2006-03-24 2006-03-24 Procedeu de obţinere a oxidului de zinc nanostructurat

Publications (2)

Publication Number Publication Date
MD3320F1 true MD3320F1 (ro) 2007-05-31
MD3320G2 MD3320G2 (ro) 2007-12-31

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ID=38164628

Family Applications (1)

Application Number Title Priority Date Filing Date
MDA20060100A MD3320G2 (ro) 2006-03-24 2006-03-24 Procedeu de obţinere a oxidului de zinc nanostructurat

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MD (1) MD3320G2 (ro)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD241Z (ro) * 2009-12-29 2011-03-31 Институт Прикладной Физики Академии Наук Молдовы Procedeu de obţinere a nanoparticulelor de PbS stabilizate cu gelatină
MD242Z (ro) * 2010-01-26 2011-03-31 Институт Прикладной Физики Академии Наук Молдовы Procedeu de obţinere a nanocristalelor hidrofile PbS
MD4500C1 (ro) * 2015-07-23 2018-02-28 Государственный Университет Молд0 Procedeu de obţinere a monocristalelor de ZnO din faza gazoasă
MD4455C1 (ro) * 2015-11-27 2017-07-31 Государственный Университет Молд0 Procedeu de obţinere a monocristalelor de ZnO din faza gazoasă fără germene
MD4517C1 (ro) * 2016-10-11 2018-04-30 Государственный Университет Молд0 Procedeu de obţinere a monocristalelor de ZnO din faza gazoasă fără germene

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6586095B2 (en) * 2001-01-12 2003-07-01 Georgia Tech Research Corp. Semiconducting oxide nanostructures

Also Published As

Publication number Publication date
MD3320G2 (ro) 2007-12-31

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FG4A Patent for invention issued
KA4A Patent for invention lapsed due to non-payment of fees (with right of restoration)
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