MD3811F2 - Procedeu de obtinere a zonelor nanostructurale semiconductoare - Google Patents

Procedeu de obtinere a zonelor nanostructurale semiconductoare

Info

Publication number
MD3811F2
MD3811F2 MDA20070303A MD20070303A MD3811F2 MD 3811 F2 MD3811 F2 MD 3811F2 MD A20070303 A MDA20070303 A MD A20070303A MD 20070303 A MD20070303 A MD 20070303A MD 3811 F2 MD3811 F2 MD 3811F2
Authority
MD
Moldova
Prior art keywords
nanostructural
zones
nacl solution
obtaining
semiconductor
Prior art date
Application number
MDA20070303A
Other languages
English (en)
Other versions
MD3811G2 (ro
Inventor
Eduard MONAICO
Ion Tighineanu
Veaceslav Ursachi
Vitalie Postolache
Original Assignee
Institutul De Fizica Aplicata Al Academiei De Stiinte A Moldovei
Universitatea Tehnica A Moldovei
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Institutul De Fizica Aplicata Al Academiei De Stiinte A Moldovei, Universitatea Tehnica A Moldovei filed Critical Institutul De Fizica Aplicata Al Academiei De Stiinte A Moldovei
Priority to MDA20070303A priority Critical patent/MD3811G2/ro
Publication of MD3811F2 publication Critical patent/MD3811F2/ro
Publication of MD3811G2 publication Critical patent/MD3811G2/ro

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Abstract

Inventia se refera la producerea semiconductorilor. Procedeul de obtinere a zonelor nanostructuralesemiconductoare include depunerea pe una din fetele unui cristal semiconductor a unei masti cu o portiune deschisa, corodarea electrochimica la anodizare intr-o solutie apoasa de NaCl si inlaturarea mastii. Rezultatul inventiei consta in obtinerea zonelor nanostructurale semiconductoare cu morfologia dirijata de concentratia solutiei de NaCl si deparametrii electrici aplicati, utilizand solutia de NaCl care nu prezinta pericol pentru sanatatea personalului sau pentru mediul ambiant.
MDA20070303A 2007-11-06 2007-11-06 Procedeu de obţinere a zonelor nanostructurale semiconductoare MD3811G2 (ro)

Priority Applications (1)

Application Number Priority Date Filing Date Title
MDA20070303A MD3811G2 (ro) 2007-11-06 2007-11-06 Procedeu de obţinere a zonelor nanostructurale semiconductoare

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
MDA20070303A MD3811G2 (ro) 2007-11-06 2007-11-06 Procedeu de obţinere a zonelor nanostructurale semiconductoare

Publications (2)

Publication Number Publication Date
MD3811F2 true MD3811F2 (ro) 2009-01-31
MD3811G2 MD3811G2 (ro) 2009-08-31

Family

ID=40347779

Family Applications (1)

Application Number Title Priority Date Filing Date
MDA20070303A MD3811G2 (ro) 2007-11-06 2007-11-06 Procedeu de obţinere a zonelor nanostructurale semiconductoare

Country Status (1)

Country Link
MD (1) MD3811G2 (ro)

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1255444B (de) * 1964-07-28 1967-11-30 Ibm Deutschland Verfahren zum AEtzen und Polieren von Halbleitern
US6277662B1 (en) * 1999-06-03 2001-08-21 Seiichi Nagata Silicon substrate and forming method thereof
RU2214359C1 (ru) * 2002-09-05 2003-10-20 Санкт-Петербургский государственный институт точной механики и оптики (технический университет) Способ формирования решетки нанокластеров кремния на структурированной подложке
MD2610G2 (ro) * 2004-04-28 2005-06-30 Ион ТИГИНЯНУ Procedeu de obţinere a suprafeţei poroase a semiconductorului
MD2536G2 (ro) * 2004-04-28 2005-03-31 Ион ТИГИНЯНУ Procedeu de obtinere a structurilor semiconductoare poroase
MD2646G2 (ro) * 2004-04-28 2005-08-31 Ион ТИГИНЯНУ Procedeu de obţinere a lentilelor în baza semiconductoarelor cu gradient al indicelui de refracţie
MD2556G2 (ro) * 2004-06-01 2005-03-31 Ион ТИГИНЯНУ Procedeu de obtinere a nanostructurilor semiconductoare
MD2585G2 (ro) * 2004-06-01 2005-05-31 Ион ТИГИНЯНУ Procedeu de obţinere a nanostructurilor semiconductoare
MD2714G2 (ro) * 2004-10-19 2005-10-31 Ион ТИГИНЯНУ Procedeu de obtinere a structurilor semiconductoare poroase
MD2804G2 (ro) * 2004-10-19 2006-02-28 Ион ТИГИНЯНУ Procedeu de obţinere a nanocompozitului
MD2982G2 (ro) * 2005-08-10 2006-10-31 Институт Прикладной Физики Академии Наук Молдовы Procedeu de obţinere a nanostructurilor semiconductoare
RU2300158C1 (ru) * 2005-09-29 2007-05-27 Институт микроэлектроники и информатики РАН Способ формирования субмикронной и нанометровой структуры
MD3691C2 (ro) * 2007-05-10 2009-03-31 Акционерное Общество Научно-Исследовательский Институт "Eliri" Procedeu de confecţionare a unei nanostructuri filiforme

Also Published As

Publication number Publication date
MD3811G2 (ro) 2009-08-31

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Legal Events

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TK4A Erratum in official gazette in regard to patent for invention

Free format text: RECTIFICATION IN INID 13

TK4A Erratum in official gazette in regard to patent for invention

Free format text: RECTIFICATION IN INID 13

FG4A Patent for invention issued
KA4A Patent for invention lapsed due to non-payment of fees (with right of restoration)
MM4A Patent for invention definitely lapsed due to non-payment of fees