MY200922A - Photosensitive Resin Composition and Resist Pattern Formation Method - Google Patents

Photosensitive Resin Composition and Resist Pattern Formation Method

Info

Publication number
MY200922A
MY200922A MYPI2020006886A MYPI2020006886A MY200922A MY 200922 A MY200922 A MY 200922A MY PI2020006886 A MYPI2020006886 A MY PI2020006886A MY PI2020006886 A MYPI2020006886 A MY PI2020006886A MY 200922 A MY200922 A MY 200922A
Authority
MY
Malaysia
Prior art keywords
resin composition
photosensitive resin
mass
alkali
soluble polymer
Prior art date
Application number
MYPI2020006886A
Inventor
Yoshitaka Kamochi
Shinichi Kunimatsu
Takayuki Matsuda
Original Assignee
Asahi Chemical Ind
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Chemical Ind filed Critical Asahi Chemical Ind
Publication of MY200922A publication Critical patent/MY200922A/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F2/00—Processes of polymerisation
    • C08F2/46—Polymerisation initiated by wave energy or particle radiation
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02—Monomers containing only one unsaturated aliphatic radical
    • C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/06—Hydrocarbons
    • C08F212/08—Styrene
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/04—Acids; Metal salts or ammonium salts thereof
    • C08F220/06—Acrylic acid; Methacrylic acid; Metal salts or ammonium salts thereof
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
    • C08F220/30—Esters containing oxygen in addition to the carboxy oxygen containing aromatic rings in the alcohol moiety
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/033—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
    • H05K3/061—Etching masks
    • H05K3/064—Photoresists
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Polymers & Plastics (AREA)
  • Medicinal Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Polymerisation Methods In General (AREA)
  • Macromonomer-Based Addition Polymer (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Graft Or Block Polymers (AREA)

Abstract

Provided is a photosensitive resin composition which is exposed to light and then heated and developed into a resin cured product. This photosensitive resin composition contains, on the basis of the total mass of solids thereof: (A) 10-90% by mass of an alkali-soluble polymer; (B) 5-70% by mass of a compound having an ethylenically unsaturated double bond; and (C) 0.01-20% by mass of a photoinitiator. The alkali-soluble polymer (A) has an inorganic value (I value) of 720 or less or a solubility parameter (sp value) of 21.45 MPa or less. Alternatively, the photosensitive resin composition contains an alkali-soluble polymer (A1) in an amount of 3% by mass or more on the basis of the total mass of solids of the photosensitive resin composition, the alkali-soluble polymer (A1) containing 52% by mass or more of constituent units derived from styrene and/or a styrene derivative as a monomer component.
MYPI2020006886A 2018-06-22 2019-06-11 Photosensitive Resin Composition and Resist Pattern Formation Method MY200922A (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2018118614 2018-06-22
JP2018118803 2018-06-22
JP2018118562 2018-06-22
JP2018118600 2018-06-22
PCT/JP2019/023149 WO2019244724A1 (en) 2018-06-22 2019-06-11 Photosensitive resin composition and resist pattern formation method

Publications (1)

Publication Number Publication Date
MY200922A true MY200922A (en) 2024-01-23

Family

ID=68983426

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI2020006886A MY200922A (en) 2018-06-22 2019-06-11 Photosensitive Resin Composition and Resist Pattern Formation Method

Country Status (6)

Country Link
JP (3) JP7169351B2 (en)
KR (2) KR20240046924A (en)
CN (2) CN118778362A (en)
MY (1) MY200922A (en)
TW (1) TWI716904B (en)
WO (1) WO2019244724A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021192058A1 (en) 2020-03-24 2021-09-30 昭和電工マテリアルズ株式会社 Photosensitive resin composition, photosensitive element, and method for producing wiring board
JP7707213B2 (en) * 2021-01-29 2025-07-14 旭化成株式会社 Photosensitive element and method for forming resist pattern
TWI830425B (en) 2021-10-25 2024-01-21 日商旭化成股份有限公司 Photosensitive element and method for forming photoresist pattern
TWI912575B (en) 2022-01-14 2026-01-21 日商旭化成股份有限公司 Methods for forming photosensitive resin compositions, photosensitive resin layers, and photoresist patterns.

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59202457A (en) 1983-05-02 1984-11-16 Asahi Chem Ind Co Ltd Improved photopolymerizable laminate
JP2005031575A (en) 2003-07-11 2005-02-03 Asahi Kasei Electronics Co Ltd Material for forming black matrix
EP2045629B1 (en) * 2006-07-25 2013-09-04 Hitachi Chemical Company, Ltd. Resin composition for optical waveguide, resin film for optical waveguide, and optical waveguide
JP5136423B2 (en) * 2006-12-19 2013-02-06 日立化成工業株式会社 Photosensitive resin composition, photosensitive element, resist pattern forming method and printed wiring board manufacturing method
TW200908839A (en) * 2007-08-09 2009-02-16 Nichigo Morton Co Ltd Solder mask, photoresist pattern forming method and the light-emitting device thereof
JP2009204800A (en) * 2008-02-27 2009-09-10 Fujifilm Corp Photosensitive composition and photosensitive film
JP2010249884A (en) 2009-04-10 2010-11-04 Dupont Mrc Dryfilm Ltd Photopolymerizable resin composition and photosensitive film using the same
JP5948539B2 (en) 2012-01-27 2016-07-06 旭化成株式会社 Photosensitive resin composition
JP6257164B2 (en) 2013-03-28 2018-01-10 旭化成株式会社 Method for forming resist pattern
JP2015152726A (en) * 2014-02-13 2015-08-24 三洋化成工業株式会社 photosensitive resin composition
WO2016017596A1 (en) * 2014-07-28 2016-02-04 日立化成株式会社 Photosensitive resin composition, photosensitive element, method for producing resist pattern and method for manufacturing printed wiring board
WO2016047691A1 (en) * 2014-09-24 2016-03-31 旭化成イーマテリアルズ株式会社 Photosensitive resin composition, photosensitive resin laminate, resin pattern production method, cured film, and display device
WO2016163540A1 (en) * 2015-04-08 2016-10-13 旭化成株式会社 Photosensitive resin composition
JP2016224162A (en) 2015-05-28 2016-12-28 日立化成株式会社 Method for forming resist pattern, method for manufacturing printed wiring board and photosensitive element
JP2016224161A (en) 2015-05-28 2016-12-28 日立化成株式会社 Method for forming resist pattern, method for manufacturing printed wiring board and photosensitive element
JP6782417B2 (en) 2015-07-29 2020-11-11 昭和電工マテリアルズ株式会社 Photosensitive resin composition, photosensitive element, resist pattern forming method and printed wiring board manufacturing method
MY186932A (en) * 2015-09-11 2021-08-26 Asahi Chemical Ind Photosensitive resin composition
JP6819160B2 (en) 2015-11-26 2021-01-27 Jsr株式会社 Photosensitive resin composition, resist pattern forming method, and metal pattern manufacturing method
JP6869263B2 (en) * 2016-12-05 2021-05-12 旭化成株式会社 Photosensitive resin composition, photosensitive resin laminate, resin pattern manufacturing method and cured film pattern manufacturing method
TWI677757B (en) * 2017-03-01 2019-11-21 日商旭化成股份有限公司 Photosensitive resin composition
JP6454391B2 (en) * 2017-09-21 2019-01-16 旭化成株式会社 Method for forming resist pattern

Also Published As

Publication number Publication date
JP7480252B2 (en) 2024-05-09
TW202005995A (en) 2020-02-01
KR20240046924A (en) 2024-04-11
JP7169351B2 (en) 2022-11-10
WO2019244724A1 (en) 2019-12-26
KR102655468B1 (en) 2024-04-05
CN112352197A (en) 2021-02-09
JP2024100770A (en) 2024-07-26
JPWO2019244724A1 (en) 2021-03-11
TWI716904B (en) 2021-01-21
KR20210013119A (en) 2021-02-03
CN118778362A (en) 2024-10-15
JP2023010735A (en) 2023-01-20

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