NL8201732A - Bestralingsinrichting met bundelsplitsing. - Google Patents

Bestralingsinrichting met bundelsplitsing. Download PDF

Info

Publication number
NL8201732A
NL8201732A NL8201732A NL8201732A NL8201732A NL 8201732 A NL8201732 A NL 8201732A NL 8201732 A NL8201732 A NL 8201732A NL 8201732 A NL8201732 A NL 8201732A NL 8201732 A NL8201732 A NL 8201732A
Authority
NL
Netherlands
Prior art keywords
mirror
elementary
beams
matrix
diaphragm
Prior art date
Application number
NL8201732A
Other languages
English (en)
Dutch (nl)
Original Assignee
Bernardus Johannes Gerardus Ma
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bernardus Johannes Gerardus Ma filed Critical Bernardus Johannes Gerardus Ma
Priority to NL8201732A priority Critical patent/NL8201732A/nl
Priority to DE8383200567T priority patent/DE3379616D1/de
Priority to EP83200567A priority patent/EP0092873B1/fr
Priority to JP58071552A priority patent/JPS58204460A/ja
Publication of NL8201732A publication Critical patent/NL8201732A/nl
Priority to US06/740,308 priority patent/US4568833A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3007—Electron or ion-optical systems

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Beam Exposure (AREA)
NL8201732A 1982-04-07 1982-04-27 Bestralingsinrichting met bundelsplitsing. NL8201732A (nl)

Priority Applications (5)

Application Number Priority Date Filing Date Title
NL8201732A NL8201732A (nl) 1982-04-27 1982-04-27 Bestralingsinrichting met bundelsplitsing.
DE8383200567T DE3379616D1 (en) 1982-04-27 1983-04-19 Charged-particle beam exposure device incorporating beam splitting
EP83200567A EP0092873B1 (fr) 1982-04-27 1983-04-19 Dispositif d'exposition par faisceau de particules chargées utilisant le fractionnement du faisceau
JP58071552A JPS58204460A (ja) 1982-04-27 1983-04-25 帯電粒子ビ−ム露光装置及びそれを用いるマイクロエレクトロニクス部品の製造方法
US06/740,308 US4568833A (en) 1982-04-07 1985-06-03 Charged-particle beam exposure device incorporating beam splitting

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL8201732A NL8201732A (nl) 1982-04-27 1982-04-27 Bestralingsinrichting met bundelsplitsing.
NL8201732 1982-04-27

Publications (1)

Publication Number Publication Date
NL8201732A true NL8201732A (nl) 1983-11-16

Family

ID=19839658

Family Applications (1)

Application Number Title Priority Date Filing Date
NL8201732A NL8201732A (nl) 1982-04-07 1982-04-27 Bestralingsinrichting met bundelsplitsing.

Country Status (5)

Country Link
US (1) US4568833A (fr)
EP (1) EP0092873B1 (fr)
JP (1) JPS58204460A (fr)
DE (1) DE3379616D1 (fr)
NL (1) NL8201732A (fr)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8502275A (nl) * 1985-08-19 1987-03-16 Philips Nv In slanke deelbundels opgedeelde bundel geladen deeltjes.
NL8702570A (nl) * 1987-10-29 1989-05-16 Philips Nv Geladen deeltjes bundel apparaat.
US4818868A (en) * 1988-02-11 1989-04-04 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Trochoidal analysis of scattered electrons in a merged electron-ion beam geometry
US5017780A (en) * 1989-09-20 1991-05-21 Roland Kutscher Ion reflector
US5045695A (en) * 1990-06-04 1991-09-03 The United States Of America As Represented By The Secretary Of The Navy Transition radiation interference spectrometer
JP2957669B2 (ja) * 1990-09-28 1999-10-06 株式会社東芝 反射マスク及びこれを用いた荷電ビーム露光装置
DE19523859C2 (de) * 1995-06-30 2000-04-27 Bruker Daltonik Gmbh Vorrichtung für die Reflektion geladener Teilchen
US6157039A (en) * 1998-05-07 2000-12-05 Etec Systems, Inc. Charged particle beam illumination of blanking aperture array
US6519018B1 (en) 1998-11-03 2003-02-11 International Business Machines Corporation Vertically aligned liquid crystal displays and methods for their production
US6061115A (en) * 1998-11-03 2000-05-09 International Business Machines Incorporation Method of producing a multi-domain alignment layer by bombarding ions of normal incidence
US6313896B1 (en) 1999-08-31 2001-11-06 International Business Machines Corporation Method for forming a multi-domain alignment layer for a liquid crystal display device
EP2870115A1 (fr) * 2012-07-07 2015-05-13 LIMO Patentverwaltung GmbH & Co. KG Dispositif générateur de faisceau d'électrons
US9336993B2 (en) * 2014-02-26 2016-05-10 Taiwan Semiconductor Manufacturing Company, Ltd. Digital pattern generator (DPG) for E-beam lithography

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1100237A (fr) * 1977-03-23 1981-04-28 Roger F.W. Pease Traduction non-disponible
FR2443085A1 (fr) * 1978-07-24 1980-06-27 Thomson Csf Dispositif de microlithographie par bombardement electronique
US4472636A (en) * 1979-11-01 1984-09-18 Eberhard Hahn Method of and device for corpuscular projection
NL8200559A (nl) * 1982-02-15 1983-09-01 Ir Jan Bart Le Poole Prof Dr Bestralingsinrichting met bundelsplitsing.

Also Published As

Publication number Publication date
US4568833A (en) 1986-02-04
EP0092873A2 (fr) 1983-11-02
DE3379616D1 (en) 1989-05-18
EP0092873A3 (en) 1985-08-28
JPS58204460A (ja) 1983-11-29
EP0092873B1 (fr) 1989-04-12

Similar Documents

Publication Publication Date Title
KR101068607B1 (ko) 복수 개의 빔렛 발생 장치
NL8201732A (nl) Bestralingsinrichting met bundelsplitsing.
JP7319456B2 (ja) 粒子ビームシステム及び個別粒子ビームの電流強度を柔軟に設定するためのその使用
JP4949843B2 (ja) 荷電粒子ビームレット露光システム
KR102872217B1 (ko) 콘트라스트 보정 렌즈 시스템을 갖는 다중 입자 빔 시스템
NL8200559A (nl) Bestralingsinrichting met bundelsplitsing.
JP2810797B2 (ja) 反射電子顕微鏡
JP2019521495A (ja) 電子顕微鏡用の収差補正装置およびこのような装置を備えた電子顕微鏡
NL8000524A (nl) Lithograferen door middel van een elektronenstraal.
US7902504B2 (en) Charged particle beam reflector device and electron microscope
US4218621A (en) Electron beam exposure apparatus
NL8502275A (nl) In slanke deelbundels opgedeelde bundel geladen deeltjes.
NL8702570A (nl) Geladen deeltjes bundel apparaat.
EP4595089A1 (fr) Dispositif de transformation entre une phase azimutale et une phase linéaire dans un faisceau de particules chargées
JPS59171445A (ja) 立体走査型電子顕微鏡
US20110068675A1 (en) Multiple Device Shaping Uniform Distribution of Current Density in Electro-Static Focusing Systems
JPS59134531A (ja) 加速及び走査拡大電子レンズ装置
JPH0234144B2 (fr)
NL2016853B1 (en) Apparatus and method for irradiating a surface of a sample using charged particle beams
SU693478A1 (ru) Электронно-оптическа система
JPS62268045A (ja) 多ビ−ム陰極線管
SU928463A1 (ru) Электронно-оптическа система
JPH0352169B2 (fr)
JPS63131450A (ja) 静電偏向装置
WO2021071357A1 (fr) Dispositif pour générer une pluralité de petits faisceaux de particules chargées, et appareil d'inspection, d'imagerie ou de traitement et son procédé d'utilisation

Legal Events

Date Code Title Description
A1B A search report has been drawn up
A85 Still pending on 85-01-01
BV The patent application has lapsed