NL8901590A - Halfgeleiderinrichting voor het opwekken van een elektronenstroom. - Google Patents

Halfgeleiderinrichting voor het opwekken van een elektronenstroom. Download PDF

Info

Publication number: NL8901590A
Authority: NL; Netherlands
Prior art keywords: semiconductor device; type; semiconductor; region; thickness
Prior art date: 1989-06-23

Application number

NL8901590A

Other languages

English (en)

Dutch (nl)

Original Assignee

Philips Nv

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1989-06-23

Filing date

1989-06-23

Publication date

1991-01-16

1989-06-23 Application filed by Philips Nv filed Critical Philips Nv

1989-06-23 Priority to NL8901590A priority Critical patent/NL8901590A/nl

1990-06-18 Priority to EP19900201575 priority patent/EP0404246B1/fr

1990-06-18 Priority to DE1990609303 priority patent/DE69009303T2/de

1990-06-20 Priority to JP2160029A priority patent/JPH0330230A/ja

1991-01-16 Publication of NL8901590A publication Critical patent/NL8901590A/nl

1992-11-02 Priority to US07/970,437 priority patent/US5243197A/en

Links

239000004065 semiconductor Substances 0.000 title claims description 69
230000001133 acceleration Effects 0.000 claims description 9
238000010894 electron beam technology Methods 0.000 claims description 8
229910052710 silicon Inorganic materials 0.000 claims description 8
239000010703 silicon Substances 0.000 claims description 8
229910052792 caesium Inorganic materials 0.000 claims description 7
TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 claims description 7
239000000463 material Substances 0.000 claims description 7
230000015556 catabolic process Effects 0.000 claims description 4
229910052788 barium Inorganic materials 0.000 claims description 2
DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 2
229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 2
239000012535 impurity Substances 0.000 claims 1
239000010410 layer Substances 0.000 description 25
230000000694 effects Effects 0.000 description 8
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
238000013139 quantization Methods 0.000 description 6
238000010586 diagram Methods 0.000 description 5
238000000034 method Methods 0.000 description 5
238000001493 electron microscopy Methods 0.000 description 3
238000010438 heat treatment Methods 0.000 description 3
238000005381 potential energy Methods 0.000 description 3
230000007423 decrease Effects 0.000 description 2
238000004519 manufacturing process Methods 0.000 description 2
239000002344 surface layer Substances 0.000 description 2
101001053395 Arabidopsis thaliana Acid beta-fructofuranosidase 4, vacuolar Proteins 0.000 description 1
JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
NIQCNGHVCWTJSM-UHFFFAOYSA-N Dimethyl phthalate Chemical compound COC(=O)C1=CC=CC=C1C(=O)OC NIQCNGHVCWTJSM-UHFFFAOYSA-N 0.000 description 1
QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
239000010406 cathode material Substances 0.000 description 1
238000009826 distribution Methods 0.000 description 1
239000002019 doping agent Substances 0.000 description 1
238000005265 energy consumption Methods 0.000 description 1
230000008020 evaporation Effects 0.000 description 1
238000001704 evaporation Methods 0.000 description 1
230000002349 favourable effect Effects 0.000 description 1
239000007789 gas Substances 0.000 description 1
238000001459 lithography Methods 0.000 description 1
238000001451 molecular beam epitaxy Methods 0.000 description 1
230000001590 oxidative effect Effects 0.000 description 1
239000001301 oxygen Substances 0.000 description 1
229910052760 oxygen Inorganic materials 0.000 description 1
238000002360 preparation method Methods 0.000 description 1
239000007787 solid Substances 0.000 description 1
238000001228 spectrum Methods 0.000 description 1
239000000758 substrate Substances 0.000 description 1
XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/308—Semiconductor cathodes, e.g. cathodes with PN junction layers

Landscapes

Cold Cathode And The Manufacture (AREA)
Electrodes For Cathode-Ray Tubes (AREA)

NL8901590A 1989-06-23 1989-06-23 Halfgeleiderinrichting voor het opwekken van een elektronenstroom. NL8901590A (nl)

Priority Applications (5)

Application Number	Priority Date	Filing Date	Title
NL8901590A NL8901590A (nl)	1989-06-23	1989-06-23	Halfgeleiderinrichting voor het opwekken van een elektronenstroom.
EP19900201575 EP0404246B1 (fr)	1989-06-23	1990-06-18	Dispositif semiconducteur pour engendrer un courant d'électrons
DE1990609303 DE69009303T2 (de)	1989-06-23	1990-06-18	Halbleiteranordnung zum Erzeugen eines Elektronenstromes.
JP2160029A JPH0330230A (ja)	1989-06-23	1990-06-20	電子流を発生する半導体デバイス
US07/970,437 US5243197A (en)	1989-06-23	1992-11-02	Semiconductor device for generating an electron current

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
NL8901590A NL8901590A (nl)	1989-06-23	1989-06-23	Halfgeleiderinrichting voor het opwekken van een elektronenstroom.
NL8901590		1989-06-23

Publications (1)

Publication Number	Publication Date
NL8901590A true NL8901590A (nl)	1991-01-16

Family

ID=19854892

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
NL8901590A NL8901590A (nl)	1989-06-23	1989-06-23	Halfgeleiderinrichting voor het opwekken van een elektronenstroom.

Country Status (4)

Country	Link
EP (1)	EP0404246B1 (fr)
JP (1)	JPH0330230A (fr)
DE (1)	DE69009303T2 (fr)
NL (1)	NL8901590A (fr)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
NL8600676A (nl) *	1986-03-17	1987-10-16	Philips Nv	Halfgeleiderinrichting voor het opwekken van een elektronenstroom.
EP0257460B1 (fr) *	1986-08-12	1996-04-24	Canon Kabushiki Kaisha	Générateur de faisceau d'électrons à l'état solide

1989
- 1989-06-23 NL NL8901590A patent/NL8901590A/nl not_active Application Discontinuation
1990
- 1990-06-18 EP EP19900201575 patent/EP0404246B1/fr not_active Expired - Lifetime
- 1990-06-18 DE DE1990609303 patent/DE69009303T2/de not_active Expired - Fee Related
- 1990-06-20 JP JP2160029A patent/JPH0330230A/ja active Pending

Also Published As

Publication number	Publication date
JPH0330230A (ja)	1991-02-08
DE69009303T2 (de)	1994-12-08
DE69009303D1 (de)	1994-07-07
EP0404246A1 (fr)	1990-12-27
EP0404246B1 (fr)	1994-06-01

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Legal Events

Date	Code	Title	Description
1991-01-16	A1B	A search report has been drawn up
1992-02-03	BV	The patent application has lapsed