NL9401598A - Plasma-verstuivingsinrichting met een microgolfondersteuning. - Google Patents

Plasma-verstuivingsinrichting met een microgolfondersteuning. Download PDF

Info

Publication number: NL9401598A
Authority: NL; Netherlands
Prior art keywords: microwave; plasma; microwaves; target; cathode
Prior art date: 1993-10-28

Application number

NL9401598A

Other languages

English (en)

Dutch (nl)

Original Assignee

Leybold Ag

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1993-10-28

Filing date

1994-09-29

Publication date

1995-05-16

1994-09-29 Application filed by Leybold Ag filed Critical Leybold Ag

1995-05-16 Publication of NL9401598A publication Critical patent/NL9401598A/nl

Links

239000004809 Teflon Substances 0.000 claims description 4
229920006362 Teflon® Polymers 0.000 claims description 4
229920002223 polystyrene Polymers 0.000 claims description 3
239000012212 insulator Substances 0.000 claims description 2
238000002294 plasma sputter deposition Methods 0.000 claims description 2
239000004020 conductor Substances 0.000 description 10
239000000758 substrate Substances 0.000 description 10
238000004544 sputter deposition Methods 0.000 description 7
238000000034 method Methods 0.000 description 4
230000008878 coupling Effects 0.000 description 3
238000010168 coupling process Methods 0.000 description 3
238000005859 coupling reaction Methods 0.000 description 3
230000000694 effects Effects 0.000 description 3
239000011521 glass Substances 0.000 description 2
150000002500 ions Chemical class 0.000 description 2
239000002245 particle Substances 0.000 description 2
239000013077 target material Substances 0.000 description 2
RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
229910020923 Sn-O Inorganic materials 0.000 description 1
HMHVCUVYZFYAJI-UHFFFAOYSA-N Sultiame Chemical compound C1=CC(S(=O)(=O)N)=CC=C1N1S(=O)(=O)CCCC1 HMHVCUVYZFYAJI-UHFFFAOYSA-N 0.000 description 1
229910007541 Zn O Inorganic materials 0.000 description 1
229910052782 aluminium Inorganic materials 0.000 description 1
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
229910052802 copper Inorganic materials 0.000 description 1
239000010949 copper Substances 0.000 description 1
230000002950 deficient Effects 0.000 description 1
238000009713 electroplating Methods 0.000 description 1
239000002650 laminated plastic Substances 0.000 description 1
238000001755 magnetron sputter deposition Methods 0.000 description 1
239000000463 material Substances 0.000 description 1
229910052751 metal Inorganic materials 0.000 description 1
239000002184 metal Substances 0.000 description 1
229910052750 molybdenum Inorganic materials 0.000 description 1
239000011733 molybdenum Substances 0.000 description 1
239000000615 nonconductor Substances 0.000 description 1
229910052760 oxygen Inorganic materials 0.000 description 1
238000005192 partition Methods 0.000 description 1
239000002985 plastic film Substances 0.000 description 1
229920006255 plastic film Polymers 0.000 description 1
239000010453 quartz Substances 0.000 description 1
238000007789 sealing Methods 0.000 description 1
VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
125000006850 spacer group Chemical group 0.000 description 1
238000005507 spraying Methods 0.000 description 1
229960002573 sultiame Drugs 0.000 description 1
-1 trolon Polymers 0.000 description 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
- H01J37/3408—Planar magnetron sputtering
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/26—Apparatus or processes specially adapted for the manufacture of record carriers
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/32247—Resonators

Landscapes

Engineering & Computer Science (AREA)
Physics & Mathematics (AREA)
Plasma & Fusion (AREA)
Chemical & Material Sciences (AREA)
Analytical Chemistry (AREA)
Manufacturing & Machinery (AREA)
Physical Vapour Deposition (AREA)
Plasma Technology (AREA)

NL9401598A 1993-10-28 1994-09-29 Plasma-verstuivingsinrichting met een microgolfondersteuning. NL9401598A (nl)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
DE4336830		1993-10-28
DE4336830A DE4336830A1 (de)	1993-10-28	1993-10-28	Plasma-Zerstäubungsanlage mit Mikrowellenunterstützung

Publications (1)

Publication Number	Publication Date
NL9401598A true NL9401598A (nl)	1995-05-16

Family

ID=6501257

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
NL9401598A NL9401598A (nl)	1993-10-28	1994-09-29	Plasma-verstuivingsinrichting met een microgolfondersteuning.

Country Status (5)

Country	Link
US (1)	US5478459A (de)
JP (1)	JPH07183098A (de)
KR (1)	KR950012542A (de)
DE (1)	DE4336830A1 (de)
NL (1)	NL9401598A (de)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
WO2004089046A1 (ja) *	1991-11-05	2004-10-14	Nobumasa Suzuki	無端環状導波管を有するマイクロ波導入装置及び該装置を備えたプラズマ処理装置
DE19510736A1 (de) *	1995-03-24	1996-09-26	Leybold Ag	Vorrichtung zum Verhindern von Überschlägen in Hochfrequenz-Sputteranlagen
US5616224A (en) *	1995-05-09	1997-04-01	Deposition Sciences, Inc.	Apparatus for reducing the intensity and frequency of arcs which occur during a sputtering process
SG50732A1 (en) *	1995-05-19	1998-07-20	Hitachi Ltd	Method and apparatus for plasma processing apparatus
DE19532435C2 (de) *	1995-09-02	2001-07-19	Ver Foerderung Inst Kunststoff	Vorrichtung und Verfahren zum Erzeugen eines Plasmas
JPH09180898A (ja) *	1995-12-06	1997-07-11	Applied Materials Inc	プラズマ発生器及び発生方法
DE19609248A1 (de) *	1996-02-23	1997-08-28	Balzers Prozes Systeme Gmbh	Vorrichtung zum Beschichten von Substraten mittels Kathodenzerstäubung mit einem Hohltarget
DE19609249A1 (de) *	1996-02-23	1997-08-28	Balzers Prozes Systeme Gmbh	Vorrichtung zum Beschichten von Substraten mittels Kathodenzerstäubung mit einem Hohltarget
JPH09228038A (ja) *	1996-02-23	1997-09-02	Balzers Prozes Syst Gmbh	中空のターゲットを備えた、陰極スパッタによりサブストレートを被覆するための装置
US5716505A (en) *	1996-02-23	1998-02-10	Balzers Prozess-Systems Gmbh	Apparatus for coating substrates by cathode sputtering with a hollow target
JP4355036B2 (ja) *	1997-03-18	2009-10-28	キヤノンアネルバ株式会社	イオン化スパッタリング装置
JPH111770A (ja) *	1997-06-06	1999-01-06	Anelva Corp	スパッタリング装置及びスパッタリング方法
DE19905125A1 (de) *	1998-10-29	2000-05-11	Fraunhofer Ges Forschung	Elektrisch leitfähiges und optisch transparentes Material, Verfahren zu dessen Herstellung und Verwendung desselben
US6870123B2 (en)	1998-10-29	2005-03-22	Canon Kabushiki Kaisha	Microwave applicator, plasma processing apparatus having same, and plasma processing method
EP0997927A3 (de) *	1998-10-29	2003-06-25	Canon Kabushiki Kaisha	Mikrowellenkoppler mit ringförmigem Wellenleiter, Plasmabehandlungsvorrichtung und -verfahren unter Verwendung desselben
DE19928876A1 (de) *	1999-06-24	2000-12-28	Leybold Systems Gmbh	Vorrichtung zur lokalen Erzeugung eines Plasmas in einer Behandlungskammer durch Mikrowellenanregung
KR100301819B1 (ko) *	1999-06-30	2001-11-01	김영환	반도체 소자의 마스크 형성 방법
JP4121928B2 (ja)	2003-10-08	2008-07-23	シャープ株式会社	太陽電池の製造方法
US20110104381A1 (en) *	2004-01-15	2011-05-05	Stefan Laure	Plasma Treatment of Large-Scale Components
US20070077364A1 (en) *	2005-10-05	2007-04-05	Aba Con International Limited	Method to coat insulation film on aluminum body of electrolytic capacitor
JP4967784B2 (ja) *	2007-04-25	2012-07-04	凸版印刷株式会社	マイクロ波プラズマ発生装置
DE102008023027B4 (de) *	2008-05-09	2012-06-28	Von Ardenne Anlagentechnik Gmbh	Elektrodenanordnung für magnetfeldgeführte plasmagestützte Prozesse im Vakuum
TWI419988B (zh) *	2009-09-18	2013-12-21	羅門哈斯電子材料有限公司	製造耐用物件之方法
US9605341B2 (en) *	2013-03-06	2017-03-28	Applied Materials, Inc.	Physical vapor deposition RF plasma shield deposit control
US12505988B2 (en) *	2022-06-07	2025-12-23	Applied Materials, Inc.	Plasma chamber with gas cross-flow, microwave resonators and a rotatable pedestal for multiphase cyclic deposition

Citations (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE4134900A1 (de) *	1990-11-14	1992-05-21	Mitsubishi Electric Corp	Mikrowellenplasmageraet
EP0564359A1 (de) *	1992-04-03	1993-10-06	Commissariat A L'energie Atomique	Mikrowellenstrahler und Plasmareaktor unter Verwendung dieser Einrichtung
EP0563609A1 (de) *	1992-03-28	1993-10-06	Leybold Aktiengesellschaft	Vorrichtung zum Erzeugen eines Plasmas mittels Kathodenzerstäubung und Mikrowelleneinstrahlung
DE4230291A1 (de) *	1992-09-10	1994-03-17	Leybold Ag	Mikrowellenunterstützte Zerstäubungsanordnung

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH0627323B2 (ja) *	1983-12-26	1994-04-13	株式会社日立製作所	スパツタリング方法及びその装置
EP0173164B1 (de) *	1984-08-31	1988-11-09	Hitachi, Ltd.	Aufstäuben mittels Mikrowellen
JPS62170475A (ja) *	1986-01-24	1987-07-27	Hitachi Ltd	プラズマ処理装置
JPH062941B2 (ja) *	1987-05-29	1994-01-12	日本電信電話株式会社	スパッタ装置
DD263648B5 (de) *	1987-08-31	1996-01-25	Buck Werke Gmbh	Einrichtung zur erzeugungs eines Mikrowellenplasmas mit grosser Ausdehnung und Homogenitaet
DE3920834A1 (de) *	1989-06-24	1991-02-21	Leybold Ag	Mikrowellen-kathodenzerstaeubungseinrichtung
JP2936276B2 (ja) *	1990-02-27	1999-08-23	日本真空技術株式会社	透明導電膜の製造方法およびその製造装置
JPH0436465A (ja) *	1990-06-01	1992-02-06	Matsushita Electric Ind Co Ltd	マイクロ波プラズマ発生装置
DE4113142A1 (de) *	1991-03-14	1992-09-17	Leybold Ag	Vorrichtung zur erzeugung von glimmentladungen
DE4230290A1 (de) *	1992-09-10	1994-03-17	Leybold Ag	Vorrichtung zum Erzeugen eines Plasmas mittels Kathodenzerstäubung und Mikrowelleneinstrahlung

1993
- 1993-10-28 DE DE4336830A patent/DE4336830A1/de not_active Withdrawn
1994
- 1994-07-08 US US08/272,719 patent/US5478459A/en not_active Expired - Fee Related
- 1994-09-29 NL NL9401598A patent/NL9401598A/nl not_active Application Discontinuation
- 1994-10-19 JP JP6253304A patent/JPH07183098A/ja not_active Withdrawn
- 1994-10-27 KR KR1019940027670A patent/KR950012542A/ko not_active Abandoned

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE4134900A1 (de) *	1990-11-14	1992-05-21	Mitsubishi Electric Corp	Mikrowellenplasmageraet
EP0563609A1 (de) *	1992-03-28	1993-10-06	Leybold Aktiengesellschaft	Vorrichtung zum Erzeugen eines Plasmas mittels Kathodenzerstäubung und Mikrowelleneinstrahlung
EP0564359A1 (de) *	1992-04-03	1993-10-06	Commissariat A L'energie Atomique	Mikrowellenstrahler und Plasmareaktor unter Verwendung dieser Einrichtung
DE4230291A1 (de) *	1992-09-10	1994-03-17	Leybold Ag	Mikrowellenunterstützte Zerstäubungsanordnung

Also Published As

Publication number	Publication date
KR950012542A (ko)	1995-05-16
US5478459A (en)	1995-12-26
JPH07183098A (ja)	1995-07-21
DE4336830A1 (de)	1995-05-04

Legal Events

Date	Code	Title
1995-06-01	BA	A request for search or an international-type search has been filed
1997-05-01	BB	A search report has been drawn up
1997-07-01	BC	A request for examination has been filed
1999-06-01	BV	The patent application has lapsed

Publication	Publication Date	Title
NL9401598A (nl)	1995-05-16	Plasma-verstuivingsinrichting met een microgolfondersteuning.
KR100228534B1 (ko)	1999-11-01	음극스퍼터링을 이용한 플라즈마 발생장치
US5240583A (en)	1993-08-31	Apparatus to deposit multilayer films
CA2121892C (en)	2002-11-12	Ion beam gun
US8067747B2 (en)	2011-11-29	Parallel plate electrode arrangement apparatus and method
US5308461A (en)	1994-05-03	Method to deposit multilayer films
US5290993A (en)	1994-03-01	Microwave plasma processing device
US5006218A (en)	1991-04-09	Sputtering apparatus
Jenn	2003	Plasma antennas: Survey of Techniques and the Current State of the Art
JPH03122273A (ja)	1991-05-24	マイクロ波を用いた成膜装置
NL9301479A (nl)	1994-04-05	Microgolfondersteunde verstuivingsinrichting.
US5397448A (en)	1995-03-14	Device for generating a plasma by means of cathode sputtering and microwave-irradiation
US3525680A (en)	1970-08-25	Method and apparatus for the radio frequency sputtering of dielectric materials
US5418348A (en)	1995-05-23	Electron beam source assembly
KR20040050064A (ko)	2004-06-14	플랫 마그네트론
JPS6187869A (ja)	1986-05-06	スパツタ装置
US5663694A (en)	1997-09-02	Triggered-plasma microwave switch and method
US4214187A (en)	1980-07-22	Ion source producing a dense flux of low energy ions
JPH0645093A (ja)	1994-02-18	プラズマ発生装置
US4893058A (en)	1990-01-09	Array electron accelerator
KR20010022962A (ko)	2001-03-26	플라즈마 처리 장치
RU2128381C1 (ru)	1999-03-27	Ионная пушка
KR101686802B1 (ko)	2016-12-15	대향 타겟식 스퍼터링 장치
JP3080471B2 (ja)	2000-08-28	マイクロ波プラズマ発生装置
RU2210137C2 (ru)	2003-08-10	Лазерный электронно-лучевой прибор с динамической подфокусировкой