NO20054401L - Fremgangsmate for fremstilling av en kvartsgassdigel for bruk ved trekking av enkeltkrystallsilisium og kvartsgassdigel fremstilt med fremgangsmaten - Google Patents

Fremgangsmate for fremstilling av en kvartsgassdigel for bruk ved trekking av enkeltkrystallsilisium og kvartsgassdigel fremstilt med fremgangsmaten

Info

Publication number
NO20054401L
NO20054401L NO20054401A NO20054401A NO20054401L NO 20054401 L NO20054401 L NO 20054401L NO 20054401 A NO20054401 A NO 20054401A NO 20054401 A NO20054401 A NO 20054401A NO 20054401 L NO20054401 L NO 20054401L
Authority
NO
Norway
Prior art keywords
crucible
single crystal
crystal silicon
quartz gas
gas crucible
Prior art date
Application number
NO20054401A
Other languages
English (en)
Inventor
Yasuo Ohama
Hiroshi Matsui
Original Assignee
Shinetsu Quartz Prod
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinetsu Quartz Prod filed Critical Shinetsu Quartz Prod
Publication of NO20054401L publication Critical patent/NO20054401L/no

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B19/00—Other methods of shaping glass
    • C03B19/09—Other methods of shaping glass by fusing powdered glass in a shaping mould
    • C03B19/095—Other methods of shaping glass by fusing powdered glass in a shaping mould by centrifuging, e.g. arc discharge in rotating mould
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B2201/00—Type of glass produced
    • C03B2201/02—Pure silica glass, e.g. pure fused quartz
    • C03B2201/03—Impurity concentration specified
    • C03B2201/04—Hydroxyl ion (OH)

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Glass Melting And Manufacturing (AREA)

Abstract

Oppfinnelsen vedrører en fremgangsmåte for fremstilling av en kvartsglassdigel for bruk ved trekking av enkeltkrystallsilisium. Digelen har minst en dobbeMagstmktur med et porefritt indre lag og et opakt basislegeme eller ytre lag med porer.Det som kjennetegner oppfinnelsen er at i det minste basislegemet tilformes med et silisiumoksidpulver som holdes i en gass med et blandingsforhold på 0,0005 til 0,0065 kg/kg (tørr gass). Oppfinnelsen vedrører også en med fremgangsmåten fremstilt kvartsglassdigel. Den tilveiebragte digel har en gjennomsnittlig OH-gmppe-konsentrasjon på 50 ppm eller mindre og vibrasjoner på overflaten til silisiumsmelten under trekkingen av enkeltkrystallsilisium, undertrykkes. Den nye digelen er også mindre utsatt for digeldeformasjon under trekkingen av enkeltkrystallsilisium.
NO20054401A 2003-02-28 2005-09-22 Fremgangsmate for fremstilling av en kvartsgassdigel for bruk ved trekking av enkeltkrystallsilisium og kvartsgassdigel fremstilt med fremgangsmaten NO20054401L (no)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003052704A JP4453954B2 (ja) 2003-02-28 2003-02-28 シリコン単結晶引上げ用石英ガラスルツボの製造方法および該製造方法で製造された石英ガラスルツボ
PCT/EP2004/001663 WO2004076725A1 (en) 2003-02-28 2004-02-20 Method for producing quartz glass crucible for use in pulling silicon single crystal and quartz glass crucible produced by said method

Publications (1)

Publication Number Publication Date
NO20054401L true NO20054401L (no) 2005-09-22

Family

ID=32923408

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20054401A NO20054401L (no) 2003-02-28 2005-09-22 Fremgangsmate for fremstilling av en kvartsgassdigel for bruk ved trekking av enkeltkrystallsilisium og kvartsgassdigel fremstilt med fremgangsmaten

Country Status (6)

Country Link
US (1) US7587912B2 (no)
EP (1) EP1601823A1 (no)
JP (1) JP4453954B2 (no)
KR (1) KR100731835B1 (no)
NO (1) NO20054401L (no)
WO (1) WO2004076725A1 (no)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200911722A (en) 2007-07-27 2009-03-16 Japan Super Quartz Corp Production method of quartz glass crucible
US8272234B2 (en) * 2008-12-19 2012-09-25 Heraeus Shin-Etsu America, Inc. Silica crucible with pure and bubble free inner crucible layer and method of making the same
JP4951040B2 (ja) * 2009-08-05 2012-06-13 信越石英株式会社 シリカ容器及びその製造方法
KR101048586B1 (ko) * 2009-10-06 2011-07-12 주식회사 엘지실트론 고강도 석영 도가니 및 그 제조방법
JP4951057B2 (ja) 2009-12-10 2012-06-13 信越石英株式会社 シリカ容器及びその製造方法
JP2011230987A (ja) * 2010-04-30 2011-11-17 Sumitomo Electric Ind Ltd ガラス母材製造方法
JP5453677B2 (ja) * 2010-06-25 2014-03-26 株式会社Ｓｕｍｃｏ シリカガラスルツボ、シリコンインゴットの製造方法
JP5500684B2 (ja) 2010-06-25 2014-05-21 株式会社Ｓｕｍｃｏ シリカガラスルツボ及びその製造方法、シリコンインゴットの製造方法
KR101232990B1 (ko) * 2011-03-29 2013-02-13 정호용 반도체관련장비의 조 및 그 제조방법
US8524319B2 (en) 2011-11-18 2013-09-03 Memc Electronic Materials, Inc. Methods for producing crucibles with a reduced amount of bubbles
US8857214B2 (en) * 2011-11-18 2014-10-14 Sunedison Semiconductor Limited Methods for producing crucibles with a reduced amount of bubbles
DE102012109181B4 (de) 2012-09-27 2018-06-28 Heraeus Quarzglas Gmbh & Co. Kg Ziehen eines Halbleiter-Einkristalls nach dem Czochralski-Verfahren und dafür geeigneter Quarzglastiegel
JP6324837B2 (ja) * 2014-07-31 2018-05-16 信越石英株式会社 単結晶シリコン引き上げ用石英ガラスるつぼの製造方法
JP6713382B2 (ja) * 2016-08-30 2020-06-24 クアーズテック株式会社 石英ガラスルツボの製造方法、及び石英ガラスルツボ
KR102270393B1 (ko) * 2019-10-22 2021-06-30 에스케이실트론 주식회사 원료 공급 유닛, 이를 포함하는 실리콘 단결정 잉곳의 성장 장치 및 원료 공급 방법
CN110802757B (zh) * 2019-10-31 2021-11-09 淮北卓本科技有限责任公司 一种便于烘干的塑料管生产原料用混料设备

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01148718A (ja) 1987-12-03 1989-06-12 Shin Etsu Handotai Co Ltd 石英るつぼの製造方法
JPH0422861A (ja) 1990-05-17 1992-01-27 Matsushita Seiko Co Ltd 炭酸ガス検知装置
JP2933404B2 (ja) 1990-06-25 1999-08-16 信越石英 株式会社 シリコン単結晶引き上げ用石英ガラスルツボとその製造方法
GB9015090D0 (en) * 1990-07-09 1990-08-29 British Telecomm Method for the preparation of halide glass articles
JP3304131B2 (ja) * 1992-07-21 2002-07-22 ジャパンスーパークォーツ株式会社 石英粉の脱水方法
JP2888079B2 (ja) * 1993-02-04 1999-05-10 信越半導体株式会社 シリコン単結晶引上げ用ルツボ
US5772714A (en) * 1995-01-25 1998-06-30 Shin-Etsu Quartz Products Co., Ltd. Process for producing opaque silica glass
JP2811290B2 (ja) 1995-04-04 1998-10-15 信越石英株式会社 シリコン単結晶引き上げ用石英ガラスルツボ
JP3765368B2 (ja) * 1999-06-01 2006-04-12 東芝セラミックス株式会社 石英ガラスルツボおよびその製造方法
DE19962449C2 (de) * 1999-12-22 2003-09-25 Heraeus Quarzglas Quarzglastiegel und Verfahren für seine Herstellung
JP4592037B2 (ja) * 2000-05-31 2010-12-01 信越石英株式会社 石英ガラスルツボの製造方法
JP4447738B2 (ja) 2000-05-31 2010-04-07 信越石英株式会社 多層構造の石英ガラスルツボの製造方法

Also Published As

Publication number Publication date
EP1601823A1 (en) 2005-12-07
JP2004262690A (ja) 2004-09-24
KR20050101564A (ko) 2005-10-24
US20060174651A1 (en) 2006-08-10
WO2004076725A1 (en) 2004-09-10
KR100731835B1 (ko) 2007-06-25
US7587912B2 (en) 2009-09-15
JP4453954B2 (ja) 2010-04-21

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