NO20054401L - Fremgangsmate for fremstilling av en kvartsgassdigel for bruk ved trekking av enkeltkrystallsilisium og kvartsgassdigel fremstilt med fremgangsmaten - Google Patents
Fremgangsmate for fremstilling av en kvartsgassdigel for bruk ved trekking av enkeltkrystallsilisium og kvartsgassdigel fremstilt med fremgangsmatenInfo
- Publication number
- NO20054401L NO20054401L NO20054401A NO20054401A NO20054401L NO 20054401 L NO20054401 L NO 20054401L NO 20054401 A NO20054401 A NO 20054401A NO 20054401 A NO20054401 A NO 20054401A NO 20054401 L NO20054401 L NO 20054401L
- Authority
- NO
- Norway
- Prior art keywords
- crucible
- single crystal
- crystal silicon
- quartz gas
- gas crucible
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title abstract 4
- 239000010453 quartz Substances 0.000 title 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 abstract 1
- 239000011148 porous material Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B19/00—Other methods of shaping glass
- C03B19/09—Other methods of shaping glass by fusing powdered glass in a shaping mould
- C03B19/095—Other methods of shaping glass by fusing powdered glass in a shaping mould by centrifuging, e.g. arc discharge in rotating mould
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B2201/00—Type of glass produced
- C03B2201/02—Pure silica glass, e.g. pure fused quartz
- C03B2201/03—Impurity concentration specified
- C03B2201/04—Hydroxyl ion (OH)
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Manufacturing & Machinery (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Glass Melting And Manufacturing (AREA)
Abstract
Oppfinnelsen vedrører en fremgangsmåte for fremstilling av en kvartsglassdigel for bruk ved trekking av enkeltkrystallsilisium. Digelen har minst en dobbeMagstmktur med et porefritt indre lag og et opakt basislegeme eller ytre lag med porer.Det som kjennetegner oppfinnelsen er at i det minste basislegemet tilformes med et silisiumoksidpulver som holdes i en gass med et blandingsforhold på 0,0005 til 0,0065 kg/kg (tørr gass). Oppfinnelsen vedrører også en med fremgangsmåten fremstilt kvartsglassdigel. Den tilveiebragte digel har en gjennomsnittlig OH-gmppe-konsentrasjon på 50 ppm eller mindre og vibrasjoner på overflaten til silisiumsmelten under trekkingen av enkeltkrystallsilisium, undertrykkes. Den nye digelen er også mindre utsatt for digeldeformasjon under trekkingen av enkeltkrystallsilisium.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003052704A JP4453954B2 (ja) | 2003-02-28 | 2003-02-28 | シリコン単結晶引上げ用石英ガラスルツボの製造方法および該製造方法で製造された石英ガラスルツボ |
| PCT/EP2004/001663 WO2004076725A1 (en) | 2003-02-28 | 2004-02-20 | Method for producing quartz glass crucible for use in pulling silicon single crystal and quartz glass crucible produced by said method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NO20054401L true NO20054401L (no) | 2005-09-22 |
Family
ID=32923408
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NO20054401A NO20054401L (no) | 2003-02-28 | 2005-09-22 | Fremgangsmate for fremstilling av en kvartsgassdigel for bruk ved trekking av enkeltkrystallsilisium og kvartsgassdigel fremstilt med fremgangsmaten |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US7587912B2 (no) |
| EP (1) | EP1601823A1 (no) |
| JP (1) | JP4453954B2 (no) |
| KR (1) | KR100731835B1 (no) |
| NO (1) | NO20054401L (no) |
| WO (1) | WO2004076725A1 (no) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8047020B2 (en) | 2007-07-27 | 2011-11-01 | Japan Super Quartz Corporation | Method of producing vitreous silica crucible |
| US8272234B2 (en) * | 2008-12-19 | 2012-09-25 | Heraeus Shin-Etsu America, Inc. | Silica crucible with pure and bubble free inner crucible layer and method of making the same |
| JP4951040B2 (ja) * | 2009-08-05 | 2012-06-13 | 信越石英株式会社 | シリカ容器及びその製造方法 |
| KR101048586B1 (ko) * | 2009-10-06 | 2011-07-12 | 주식회사 엘지실트론 | 고강도 석영 도가니 및 그 제조방법 |
| JP4951057B2 (ja) * | 2009-12-10 | 2012-06-13 | 信越石英株式会社 | シリカ容器及びその製造方法 |
| JP2011230987A (ja) * | 2010-04-30 | 2011-11-17 | Sumitomo Electric Ind Ltd | ガラス母材製造方法 |
| JP5500684B2 (ja) | 2010-06-25 | 2014-05-21 | 株式会社Sumco | シリカガラスルツボ及びその製造方法、シリコンインゴットの製造方法 |
| JP5453677B2 (ja) * | 2010-06-25 | 2014-03-26 | 株式会社Sumco | シリカガラスルツボ、シリコンインゴットの製造方法 |
| KR101232990B1 (ko) * | 2011-03-29 | 2013-02-13 | 정호용 | 반도체관련장비의 조 및 그 제조방법 |
| US8524319B2 (en) | 2011-11-18 | 2013-09-03 | Memc Electronic Materials, Inc. | Methods for producing crucibles with a reduced amount of bubbles |
| US8857214B2 (en) * | 2011-11-18 | 2014-10-14 | Sunedison Semiconductor Limited | Methods for producing crucibles with a reduced amount of bubbles |
| DE102012109181B4 (de) | 2012-09-27 | 2018-06-28 | Heraeus Quarzglas Gmbh & Co. Kg | Ziehen eines Halbleiter-Einkristalls nach dem Czochralski-Verfahren und dafür geeigneter Quarzglastiegel |
| JP6324837B2 (ja) * | 2014-07-31 | 2018-05-16 | 信越石英株式会社 | 単結晶シリコン引き上げ用石英ガラスるつぼの製造方法 |
| JP6713382B2 (ja) * | 2016-08-30 | 2020-06-24 | クアーズテック株式会社 | 石英ガラスルツボの製造方法、及び石英ガラスルツボ |
| KR102270393B1 (ko) * | 2019-10-22 | 2021-06-30 | 에스케이실트론 주식회사 | 원료 공급 유닛, 이를 포함하는 실리콘 단결정 잉곳의 성장 장치 및 원료 공급 방법 |
| CN110802757B (zh) * | 2019-10-31 | 2021-11-09 | 淮北卓本科技有限责任公司 | 一种便于烘干的塑料管生产原料用混料设备 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01148718A (ja) | 1987-12-03 | 1989-06-12 | Shin Etsu Handotai Co Ltd | 石英るつぼの製造方法 |
| JPH0422861A (ja) | 1990-05-17 | 1992-01-27 | Matsushita Seiko Co Ltd | 炭酸ガス検知装置 |
| JP2933404B2 (ja) | 1990-06-25 | 1999-08-16 | 信越石英 株式会社 | シリコン単結晶引き上げ用石英ガラスルツボとその製造方法 |
| GB9015090D0 (en) * | 1990-07-09 | 1990-08-29 | British Telecomm | Method for the preparation of halide glass articles |
| JP3304131B2 (ja) | 1992-07-21 | 2002-07-22 | ジャパンスーパークォーツ株式会社 | 石英粉の脱水方法 |
| JP2888079B2 (ja) * | 1993-02-04 | 1999-05-10 | 信越半導体株式会社 | シリコン単結晶引上げ用ルツボ |
| US5772714A (en) * | 1995-01-25 | 1998-06-30 | Shin-Etsu Quartz Products Co., Ltd. | Process for producing opaque silica glass |
| JP2811290B2 (ja) | 1995-04-04 | 1998-10-15 | 信越石英株式会社 | シリコン単結晶引き上げ用石英ガラスルツボ |
| JP3765368B2 (ja) * | 1999-06-01 | 2006-04-12 | 東芝セラミックス株式会社 | 石英ガラスルツボおよびその製造方法 |
| DE19962449C2 (de) * | 1999-12-22 | 2003-09-25 | Heraeus Quarzglas | Quarzglastiegel und Verfahren für seine Herstellung |
| JP4592037B2 (ja) * | 2000-05-31 | 2010-12-01 | 信越石英株式会社 | 石英ガラスルツボの製造方法 |
| JP4447738B2 (ja) | 2000-05-31 | 2010-04-07 | 信越石英株式会社 | 多層構造の石英ガラスルツボの製造方法 |
-
2003
- 2003-02-28 JP JP2003052704A patent/JP4453954B2/ja not_active Expired - Lifetime
-
2004
- 2004-02-20 US US10/547,053 patent/US7587912B2/en not_active Expired - Fee Related
- 2004-02-20 EP EP04713045A patent/EP1601823A1/en not_active Withdrawn
- 2004-02-20 KR KR1020057015829A patent/KR100731835B1/ko not_active Expired - Lifetime
- 2004-02-20 WO PCT/EP2004/001663 patent/WO2004076725A1/en not_active Ceased
-
2005
- 2005-09-22 NO NO20054401A patent/NO20054401L/no not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| EP1601823A1 (en) | 2005-12-07 |
| JP4453954B2 (ja) | 2010-04-21 |
| JP2004262690A (ja) | 2004-09-24 |
| KR100731835B1 (ko) | 2007-06-25 |
| US20060174651A1 (en) | 2006-08-10 |
| US7587912B2 (en) | 2009-09-15 |
| WO2004076725A1 (en) | 2004-09-10 |
| KR20050101564A (ko) | 2005-10-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FC2A | Withdrawal, rejection or dismissal of laid open patent application |