NO20060576L - Abrasive partikler for kjemisk mekanisk polering - Google Patents

Abrasive partikler for kjemisk mekanisk polering

Info

Publication number
NO20060576L
NO20060576L NO20060576A NO20060576A NO20060576L NO 20060576 L NO20060576 L NO 20060576L NO 20060576 A NO20060576 A NO 20060576A NO 20060576 A NO20060576 A NO 20060576A NO 20060576 L NO20060576 L NO 20060576L
Authority
NO
Norway
Prior art keywords
abrasive particles
nanometers
mechanical polishing
chemical mechanical
volume
Prior art date
Application number
NO20060576A
Other languages
English (en)
Norwegian (no)
Inventor
Jia-Ni Chu
James Neil Pryor
Original Assignee
Grace W R & Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=34079279&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=NO20060576(L) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Grace W R & Co filed Critical Grace W R & Co
Publication of NO20060576L publication Critical patent/NO20060576L/no

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
NO20060576A 2003-07-11 2006-02-03 Abrasive partikler for kjemisk mekanisk polering NO20060576L (no)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US48668603P 2003-07-11 2003-07-11
PCT/US2004/021998 WO2005007770A1 (en) 2003-07-11 2004-07-09 Abrasive particles for chemical mechanical polishing

Publications (1)

Publication Number Publication Date
NO20060576L true NO20060576L (no) 2006-02-03

Family

ID=34079279

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20060576A NO20060576L (no) 2003-07-11 2006-02-03 Abrasive partikler for kjemisk mekanisk polering

Country Status (17)

Country Link
US (1) US20060175295A1 (pl)
EP (1) EP1660606B1 (pl)
JP (1) JP2007531631A (pl)
KR (1) KR101134827B1 (pl)
CN (1) CN1849379B (pl)
AU (1) AU2004257233A1 (pl)
BR (1) BRPI0412515A (pl)
CA (1) CA2532114A1 (pl)
DK (1) DK1660606T3 (pl)
ES (1) ES2436215T3 (pl)
MX (1) MXPA06000251A (pl)
NO (1) NO20060576L (pl)
PL (1) PL1660606T3 (pl)
PT (1) PT1660606E (pl)
RU (1) RU2356926C2 (pl)
TW (1) TWI415926B (pl)
WO (1) WO2005007770A1 (pl)

Families Citing this family (60)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100662546B1 (ko) * 2005-03-07 2006-12-28 제일모직주식회사 실리콘 웨이퍼의 표면 품질을 개선하는 연마용 슬러리 조성물 및 이를 이용한 연마방법
DE102005017372A1 (de) * 2005-04-14 2006-10-19 Degussa Ag Wässrige Ceroxiddispersion
TWI506621B (zh) * 2005-12-22 2015-11-01 Kao Corp 硬碟基板用研磨液組合物
US20130000214A1 (en) * 2006-01-11 2013-01-03 Jia-Ni Chu Abrasive Particles for Chemical Mechanical Polishing
JP2007220995A (ja) * 2006-02-17 2007-08-30 Fujifilm Corp 金属用研磨液
US7897061B2 (en) * 2006-02-01 2011-03-01 Cabot Microelectronics Corporation Compositions and methods for CMP of phase change alloys
EP2052048B1 (en) * 2006-07-12 2018-01-24 Cabot Microelectronics Corporation Cmp method for metal-containing substrates
JP5007384B2 (ja) * 2006-10-18 2012-08-22 株式会社荏原製作所 触媒支援型化学加工方法及び装置
US20080085412A1 (en) * 2006-10-04 2008-04-10 Ortiz C Yolanda Silica-coated metal oxide sols having variable metal oxide to silica ratio
JP4665886B2 (ja) * 2006-10-27 2011-04-06 富士電機デバイステクノロジー株式会社 垂直磁気記録媒体、垂直磁気記録媒体用基板、および、それらの製造方法
US7837888B2 (en) * 2006-11-13 2010-11-23 Cabot Microelectronics Corporation Composition and method for damascene CMP
US7976723B2 (en) * 2007-05-17 2011-07-12 International Business Machines Corporation Method for kinetically controlled etching of copper
US20090001373A1 (en) * 2007-06-26 2009-01-01 Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel Ltd.) Electrode of aluminum-alloy film with low contact resistance, method for production thereof, and display unit
EP2048207A1 (en) * 2007-10-11 2009-04-15 STMicroelectronics S.r.l. Method of planarizing chalcogenide alloys, in particular for use in phase change memory devices
JP5270303B2 (ja) * 2008-10-31 2013-08-21 日揮触媒化成株式会社 研磨用シリカゾルおよびその製造方法
JP5326638B2 (ja) * 2009-02-18 2013-10-30 富士電機株式会社 磁気記録媒体用ガラス基板の製造方法、それが使用される磁気記録媒体用ガラス基板、および、垂直磁気記録媒体
US8382016B2 (en) * 2009-02-25 2013-02-26 Thiele Kaolin Company Nano particle mineral pigment
US20140234639A1 (en) * 2013-02-21 2014-08-21 Prakash B Malla Self binding nano particle mineral pigment
CN101928521B (zh) * 2009-06-26 2014-09-03 盟智科技股份有限公司 研浆组成物及使用该研浆组成物的金属镶嵌结构制造方法
WO2011031666A1 (en) 2009-09-11 2011-03-17 First Solar, Inc. Photovoltaic back contact
US20110117696A1 (en) * 2009-11-19 2011-05-19 Air Liquide Electronics U.S. Lp CdTe SURFACE TREATMENT FOR STABLE BACK CONTACTS
KR101271414B1 (ko) * 2010-02-15 2013-06-05 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 구리층 및 몰리브덴층을 포함하는 다층 박막용 에칭액
JP5617387B2 (ja) * 2010-07-06 2014-11-05 富士電機株式会社 垂直磁気記録媒体用基板の製造方法、および、該製造方法により製造される垂直磁気記録媒体用基板
SG11201606187RA (en) * 2010-09-08 2016-09-29 Basf Se Aqueous polishing composition and process for chemically mechanically polishing substrates containing silicon oxide dielectric and polysilicon films
WO2012032466A1 (en) * 2010-09-08 2012-03-15 Basf Se Aqueous polishing compositions containing n-substituted diazenium dioxides and/or n'-hydroxy-diazenium oxide salts
JP5965907B2 (ja) * 2010-09-08 2016-08-10 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ 電気機器や機械機器・光学機器用の基板の化学機械研磨用の水性研磨組成物と方法
WO2012036087A1 (ja) * 2010-09-15 2012-03-22 旭硝子株式会社 研磨剤および研磨方法
JP5979872B2 (ja) * 2011-01-31 2016-08-31 花王株式会社 磁気ディスク基板の製造方法
TWI605112B (zh) * 2011-02-21 2017-11-11 福吉米股份有限公司 研磨用組成物
JP5979871B2 (ja) * 2011-03-09 2016-08-31 花王株式会社 磁気ディスク基板の製造方法
US20120264303A1 (en) * 2011-04-15 2012-10-18 Taiwan Semiconductor Manufacturing Co., Ltd. Chemical mechanical polishing slurry, system and method
US9443739B2 (en) 2011-08-01 2016-09-13 Basf Se Process for the manufacture of semiconductor devices comprising the chemical mechanical polishing of elemental germanium and/or Si1-xGex material in the presence of a CMP composition comprising a specific organic compound
CN102344761A (zh) * 2011-08-03 2012-02-08 南通海迅天恒纳米科技有限公司 一种铈掺杂二氧化硅溶胶的制备方法
WO2013077368A1 (ja) * 2011-11-25 2013-05-30 株式会社 フジミインコーポレーテッド 研磨用組成物
JP6077208B2 (ja) * 2011-11-25 2017-02-08 株式会社フジミインコーポレーテッド 研磨用組成物
EP2794733B1 (en) * 2011-12-21 2019-05-15 Basf Se Method for manufacturing cmp composition and application thereof
EP2802436B1 (en) * 2012-01-10 2019-09-25 Saint-Gobain Ceramics & Plastics, Inc. Abrasive particles having complex shapes
JP6291026B2 (ja) * 2013-03-15 2018-03-14 エコラボ ユーエスエー インコーポレイティド サファイアの表面を研磨する方法
JP2013177617A (ja) * 2013-05-09 2013-09-09 Jgc Catalysts & Chemicals Ltd 研磨用シリカゾルおよび研磨用組成物
EP2810997A1 (en) * 2013-06-05 2014-12-10 Basf Se A chemical mechanical polishing (cmp) composition
JP6407582B2 (ja) * 2013-07-03 2018-10-17 Hoya株式会社 基板の製造方法、多層反射膜付き基板の製造方法、マスクブランクの製造方法、転写用マスクの製造方法、及び基板加工装置
US9190091B2 (en) * 2013-08-02 2015-11-17 HGST Netherlands, B.V. Composition and method for planarized bit-patterned magnetic media
US9340706B2 (en) * 2013-10-10 2016-05-17 Cabot Microelectronics Corporation Mixed abrasive polishing compositions
US20150114928A1 (en) * 2013-10-30 2015-04-30 Jia-Ni Chu Abrasive Particles for Chemical Mechanical Polishing
CN104650739A (zh) * 2013-11-22 2015-05-27 安集微电子（上海）有限公司 一种用于抛光二氧化硅基材的化学机械抛光液
WO2016136447A1 (ja) * 2015-02-26 2016-09-01 堺化学工業株式会社 負帯電性基板の研磨方法、及び、高表面平滑性の負帯電性基板の製造方法
US10414947B2 (en) * 2015-03-05 2019-09-17 Cabot Microelectronics Corporation Polishing composition containing ceria particles and method of use
US9505952B2 (en) * 2015-03-05 2016-11-29 Cabot Microelectronics Corporation Polishing composition containing ceria abrasive
CN105463467A (zh) * 2015-11-30 2016-04-06 江苏中晶科技有限公司 高精密弱碱性不锈钢抛光液及其制备方法
US10066126B2 (en) * 2016-01-06 2018-09-04 Cabot Microelectronics Corporation Tungsten processing slurry with catalyst
US10253216B2 (en) * 2016-07-01 2019-04-09 Versum Materials Us, Llc Additives for barrier chemical mechanical planarization
US10752785B2 (en) * 2016-09-09 2020-08-25 IndusCo, Ltd. Anti-slip botanical antimicrobial microemulsions
CN108728849A (zh) * 2018-05-17 2018-11-02 合肥协耀玻璃制品有限公司 一种不锈钢材料用抛光剂及其制备方法
CN108587478B (zh) * 2018-07-03 2020-09-25 中国人民解放军国防科技大学 一种改性纳米二氧化硅复合抛光液及其应用
US10907074B2 (en) * 2019-07-03 2021-02-02 Fujifilm Electronic Materials U.S.A., Inc. Polishing compositions for reduced defectivity and methods of using the same
US20220411686A1 (en) * 2019-12-04 2022-12-29 3M Innovative Properties Company Particulate slurries and methods of making the same
ES2756948B2 (es) * 2020-02-04 2022-12-19 Drylyte Sl Electrolito solido para el electropulido en seco de metales con moderador de actividad
US20210269674A1 (en) * 2020-02-28 2021-09-02 Fujimi Corporation Polishing composition containing zirconia particles and an oxidizer
KR102526666B1 (ko) 2021-06-17 2023-04-26 배진범 정전기 방지용 연마체
CN115109520B (zh) * 2022-06-01 2024-10-15 大连理工大学 用于单晶金刚石化学机械抛光加工的抛光液及其制备方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU817038A1 (ru) * 1979-06-28 1981-03-30 Всесоюзный Научно-Исследовательскийинститут Синтетических Смол Полимерна абразивна композици
RU2064943C1 (ru) * 1994-09-29 1996-08-10 Институт неметаллических материалов СО РАН Композиционный полимерный материал для абразивного инструмента
KR100313573B1 (ko) * 1999-02-19 2001-11-07 안복현 연마용 조성물
JP3099002B1 (ja) * 1999-06-25 2000-10-16 茂徳科技股▲ふん▼有限公司 ２段階化学機械研磨方法
US6527817B1 (en) * 1999-11-15 2003-03-04 Cabot Microelectronics Corporation Composition and method for planarizing surfaces
US6454820B2 (en) * 2000-02-03 2002-09-24 Kao Corporation Polishing composition
US6471884B1 (en) * 2000-04-04 2002-10-29 Cabot Microelectronics Corporation Method for polishing a memory or rigid disk with an amino acid-containing composition
EP2045307A1 (en) * 2000-05-12 2009-04-08 Nissan Chemical Industries, Ltd. Polishing composition
JP4251516B2 (ja) * 2000-05-12 2009-04-08 花王株式会社 研磨液組成物
MY118582A (en) * 2000-05-12 2004-12-31 Kao Corp Polishing composition
US6976905B1 (en) * 2000-06-16 2005-12-20 Cabot Microelectronics Corporation Method for polishing a memory or rigid disk with a phosphate ion-containing polishing system
JP3945745B2 (ja) * 2001-03-09 2007-07-18 三井金属鉱業株式会社 セリウム系研摩材及び研摩材スラリー並びにセリウム系研摩材の製造方法
JP2003197573A (ja) * 2001-12-26 2003-07-11 Ekc Technology Kk メタル膜絶縁膜共存表面研磨用コロイダルシリカ
JP3748410B2 (ja) * 2001-12-27 2006-02-22 株式会社東芝 研磨方法及び半導体装置の製造方法
US6896942B2 (en) * 2002-04-17 2005-05-24 W. R. Grace & Co. -Conn. Coating composition comprising colloidal silica and glossy ink jet recording sheets prepared therefrom

Also Published As

Publication number Publication date
RU2006104117A (ru) 2006-07-27
KR20060041220A (ko) 2006-05-11
EP1660606A1 (en) 2006-05-31
BRPI0412515A (pt) 2006-09-19
MXPA06000251A (es) 2006-03-30
DK1660606T3 (da) 2013-12-02
KR101134827B1 (ko) 2012-04-13
AU2004257233A1 (en) 2005-01-27
CN1849379B (zh) 2011-12-14
US20060175295A1 (en) 2006-08-10
PL1660606T3 (pl) 2014-02-28
WO2005007770A1 (en) 2005-01-27
CN1849379A (zh) 2006-10-18
EP1660606B1 (en) 2013-09-04
CA2532114A1 (en) 2005-01-27
RU2356926C2 (ru) 2009-05-27
TWI415926B (zh) 2013-11-21
ES2436215T3 (es) 2013-12-27
TW200516132A (en) 2005-05-16
JP2007531631A (ja) 2007-11-08
PT1660606E (pt) 2013-12-09

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