NO20064349L - Nanoelektroniske og mikroelektroniske rensesammensetninger - Google Patents

Nanoelektroniske og mikroelektroniske rensesammensetninger

Info

Publication number
NO20064349L
NO20064349L NO20064349A NO20064349A NO20064349L NO 20064349 L NO20064349 L NO 20064349L NO 20064349 A NO20064349 A NO 20064349A NO 20064349 A NO20064349 A NO 20064349A NO 20064349 L NO20064349 L NO 20064349L
Authority
NO
Norway
Prior art keywords
approx
formulation
weight
nanoelectronic
components
Prior art date
Application number
NO20064349A
Other languages
English (en)
Norwegian (no)
Inventor
Chien-Pin Sherman Hsu
Original Assignee
Mallincrodt Baker Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mallincrodt Baker Inc filed Critical Mallincrodt Baker Inc
Publication of NO20064349L publication Critical patent/NO20064349L/no

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/39—Organic or inorganic per-compounds
    • C11D3/3947—Liquid compositions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/395—Bleaching agents
    • C11D3/3956—Liquid compositions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/261—Alcohols; Phenols
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/34—Organic compounds containing sulfur
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C11D7/5004—Organic solvents
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C11D7/5004—Organic solvents
    • C11D7/5009—Organic solvents containing phosphorus, sulfur or silicon, e.g. dimethylsulfoxide
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C11D7/5004—Organic solvents
    • C11D7/5013—Organic solvents containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C11D7/5004—Organic solvents
    • C11D7/5022—Organic solvents containing oxygen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/40—Specific cleaning or washing processes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Emergency Medicine (AREA)
  • Inorganic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
NO20064349A 2004-03-01 2006-09-26 Nanoelektroniske og mikroelektroniske rensesammensetninger NO20064349L (no)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US54897704P 2004-03-01 2004-03-01
PCT/US2005/004350 WO2005093032A1 (en) 2004-03-01 2005-02-11 Nanoelectronic and microelectronic cleaning compositions

Publications (1)

Publication Number Publication Date
NO20064349L true NO20064349L (no) 2006-11-30

Family

ID=34960788

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20064349A NO20064349L (no) 2004-03-01 2006-09-26 Nanoelektroniske og mikroelektroniske rensesammensetninger

Country Status (20)

Country Link
US (1) US7767636B2 (pt)
EP (1) EP1720966B1 (pt)
JP (1) JP4633785B2 (pt)
KR (1) KR101154692B1 (pt)
CN (1) CN1961065B (pt)
AT (1) ATE488570T1 (pt)
BR (1) BRPI0508291A (pt)
CA (1) CA2558069A1 (pt)
DE (1) DE602005024772D1 (pt)
DK (1) DK1720966T3 (pt)
ES (1) ES2354077T3 (pt)
IL (1) IL177728A (pt)
MY (1) MY146442A (pt)
NO (1) NO20064349L (pt)
PL (1) PL1720966T3 (pt)
PT (1) PT1720966E (pt)
SG (1) SG150509A1 (pt)
TW (1) TWI379174B (pt)
WO (1) WO2005093032A1 (pt)
ZA (1) ZA200607122B (pt)

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WO2006056298A1 (en) * 2004-11-25 2006-06-01 Basf Aktiengesellschaft Resist stripper and residue remover for cleaning copper surfaces in semiconductor processing
KR100675284B1 (ko) * 2005-02-01 2007-01-26 삼성전자주식회사 마이크로일렉트로닉 세정제 및 이것을 사용하여반도체소자를 제조하는 방법
JP2008535250A (ja) * 2005-04-04 2008-08-28 マリンクロッド・ベイカー・インコーポレイテッド 配線の前工程でイオン注入されたフォトレジストを洗浄するための組成物
EP1932174A4 (en) * 2005-10-05 2009-09-23 Advanced Tech Materials OXIDIZING AQUEOUS CLEANSER FOR REMOVING NIGHT REST
US20070240740A1 (en) * 2006-04-13 2007-10-18 Mcdermott Wayne T Cleaning of contaminated articles by aqueous supercritical oxidation
US7772128B2 (en) * 2006-06-09 2010-08-10 Lam Research Corporation Semiconductor system with surface modification
US8183195B2 (en) * 2007-02-14 2012-05-22 Avantor Performance Materials, Inc. Peroxide activated oxometalate based formulations for removal of etch residue
KR101416103B1 (ko) * 2007-11-12 2014-07-09 (주)코미코 불순물 제거용 세정액 및 이를 이용한 불순물 제거방법
CN101685274B (zh) * 2008-09-26 2012-08-22 安集微电子（上海）有限公司 一种用于厚膜光刻胶的清洗剂
JP5212827B2 (ja) * 2009-02-04 2013-06-19 富士電機株式会社 磁気記録媒体の製造方法、及びこの方法により製造された磁気記録媒体
WO2010091045A2 (en) * 2009-02-05 2010-08-12 Advanced Technology Materials, Inc. Non-fluoride containing composition for the removal of polymers and other organic material from a surface
KR101831452B1 (ko) * 2009-02-25 2018-02-22 아반토 퍼포먼스 머티리얼즈, 엘엘씨 다목적 산성, 유기 용매 기반의 마이크로전자 세정 조성물
BRPI1008034A2 (pt) * 2009-02-25 2016-03-15 Avantor Performance Mat Inc composições removedoras para limpeza de fotorresistor implantado por íons de discos de silício de dispositivos semicondutores
US9076920B2 (en) * 2010-06-09 2015-07-07 Basf Se Aqueous alkaline etching and cleaning composition and method for treating the surface of silicon substrates
CN101912857B (zh) * 2010-07-21 2011-12-14 河北工业大学 锑化铟晶片碱性化学机械抛光后的表面洁净方法
JP5985156B2 (ja) * 2011-04-04 2016-09-06 東京エレクトロン株式会社 半導体基板の超臨界乾燥方法及び装置
EP2540800A1 (en) * 2011-06-30 2013-01-02 Solvay Sa Process for etching using sulfur compounds
SG11201400840UA (en) 2011-10-05 2014-04-28 Avantor Performance Mat Inc Microelectronic substrate cleaning compositions having copper/azole polymer inhibition
EP2843689A4 (en) * 2012-04-27 2015-05-13 Wako Pure Chem Ind Ltd CLEANING AGENT FOR SEMICONDUCTOR SUBSTRATES AND PROCESS FOR PROCESSING THE SURFACE OF A SEMICONDUCTOR SUBSTRATE
US9536730B2 (en) * 2012-10-23 2017-01-03 Air Products And Chemicals, Inc. Cleaning formulations
US8853081B2 (en) * 2012-12-27 2014-10-07 Intermolecular, Inc. High dose ion-implanted photoresist removal using organic solvent and transition metal mixtures
DE102013107240A1 (de) * 2013-07-09 2015-01-15 Institut Für Verbundwerkstoffe Gmbh Gemisch zur Herstellung von Nanopartikeln aus Siliziumdioxid, Verwendung eines solchen Gemisches, Verfahren zur Herstellung von Nanopartikeln aus Siliziumdioxid, Verwendung von nach dem Verfahren hergestellten Nanopartikeln aus Siliziumdioxid sowie nach dem Verfahren hergestellte Nanopartikel aus Siliziumdioxid
JP2020513440A (ja) * 2016-11-25 2020-05-14 インテグリス・インコーポレーテッド エッチング後残留物を除去するための洗浄組成物
JP6495230B2 (ja) * 2016-12-22 2019-04-03 花王株式会社 シリコンウェーハ用リンス剤組成物
SG11202101497RA (en) * 2018-10-16 2021-03-30 Showa Denko Kk Composition, method for cleaning adhesive polymer, method for producing device wafer, and method for regenerating support wafer
KR102544429B1 (ko) * 2019-01-15 2023-06-20 가부시끼가이샤 레조낙 분해세정 조성물, 접착성 폴리머의 세정 방법, 및 디바이스 웨이퍼의 제조 방법
CN113430070B (zh) * 2020-03-23 2024-08-23 上海新阳半导体材料股份有限公司 一种CoWP兼容性的半水基清洗液、其制备方法及应用
KR102935525B1 (ko) * 2020-08-13 2026-03-06 엔테그리스, 아이엔씨. 니트라이드 에천트 조성물 및 방법
CN113201743B (zh) * 2021-04-08 2022-06-21 浙江工业大学 一种适用于电子器件的除锈剂及其制备方法
KR102933956B1 (ko) 2021-05-03 2026-03-04 삼성전자주식회사 포토레지스트 박리 조성물과 이를 이용하는 반도체 소자 및 반도체 패키지의 제조 방법
WO2024143473A1 (ja) * 2022-12-28 2024-07-04 株式会社トクヤマ 遷移金属用酸化剤の分解抑制剤

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Also Published As

Publication number Publication date
DE602005024772D1 (de) 2010-12-30
SG150509A1 (en) 2009-03-30
CN1961065B (zh) 2011-01-26
PL1720966T3 (pl) 2011-06-30
TWI379174B (en) 2012-12-11
MY146442A (en) 2012-08-15
JP2007525851A (ja) 2007-09-06
ZA200607122B (en) 2008-09-25
CN1961065A (zh) 2007-05-09
JP4633785B2 (ja) 2011-02-16
TW200534054A (en) 2005-10-16
KR20070003888A (ko) 2007-01-05
BRPI0508291A (pt) 2007-07-31
KR101154692B1 (ko) 2012-06-08
ATE488570T1 (de) 2010-12-15
CA2558069A1 (en) 2005-10-06
US7767636B2 (en) 2010-08-03
IL177728A0 (en) 2006-12-31
US20090163396A1 (en) 2009-06-25
EP1720966B1 (en) 2010-11-17
WO2005093032A1 (en) 2005-10-06
PT1720966E (pt) 2010-12-21
ES2354077T3 (es) 2011-03-09
EP1720966A1 (en) 2006-11-15
DK1720966T3 (da) 2011-02-28
IL177728A (en) 2011-08-31

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