NO20084573L - Fremgangsmate for fremstilling av halvleder substrat, solenergidrevet halvleder substrat, og etsevaesker - Google Patents

Fremgangsmate for fremstilling av halvleder substrat, solenergidrevet halvleder substrat, og etsevaesker

Info

Publication number
NO20084573L
NO20084573L NO20084573A NO20084573A NO20084573L NO 20084573 L NO20084573 L NO 20084573L NO 20084573 A NO20084573 A NO 20084573A NO 20084573 A NO20084573 A NO 20084573A NO 20084573 L NO20084573 L NO 20084573L
Authority
NO
Norway
Prior art keywords
semiconductor substrate
uneven structure
solar
etching
preparation
Prior art date
Application number
NO20084573A
Other languages
English (en)
Inventor
Masato Tsuchiya
Ikuo Mashimo
Yoshimichi Kimura
Original Assignee
Space Energy Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Space Energy Corp filed Critical Space Energy Corp
Publication of NO20084573L publication Critical patent/NO20084573L/no

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Weting (AREA)
  • Photovoltaic Devices (AREA)

Abstract

Gitt er: en prosess for sikkert å produsere ved hjelp av en lav kostnad et halvledersubstrat med utmerket effektivitet ved fotoelektrisk omdannelse, og som har stabil etsningsrate og er pyramideformet, som er kapabel til å enhetlig danne en fin ujevn struktur med ønsket størrelse tilpasset for en solcelle på overflaten; et halvledersubstrat til en applikasjon for solenergisom har en enhetlig og fin pyramideformet ujevn struktur i et plan¸ og en etsningsløsning for å danne et halvledersubstrat som har en enhetlig og fint ujevn struktur, som har en høy stabilitet ved begynnende bruk. Prosessen består av etsning av et halvledersubstrat ved bruk av en alkalisk etsende løsning inneholdende i det minste en type valgt fra en gruppe bestående av karboksylsyrer som har et karbonnummer på1 til 12 og som har i det minste en karboksylgruppe i et molekyl, derav salter, og silikon, for dermed å danne en ujevn struktur på overflaten til halvleder substratet.
NO20084573A 2006-05-02 2008-11-03 Fremgangsmate for fremstilling av halvleder substrat, solenergidrevet halvleder substrat, og etsevaesker NO20084573L (no)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006128453 2006-05-02
PCT/JP2007/058666 WO2007129555A1 (ja) 2006-05-02 2007-04-20 半導体基板の製造方法、ソーラー用半導体基板及びエッチング液

Publications (1)

Publication Number Publication Date
NO20084573L true NO20084573L (no) 2009-01-20

Family

ID=38667663

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20084573A NO20084573L (no) 2006-05-02 2008-11-03 Fremgangsmate for fremstilling av halvleder substrat, solenergidrevet halvleder substrat, og etsevaesker

Country Status (9)

Country Link
US (1) US20090266414A1 (no)
EP (1) EP2015351A1 (no)
JP (1) JP4795430B2 (no)
KR (1) KR101010531B1 (no)
CN (1) CN101432855B (no)
MY (1) MY150000A (no)
NO (1) NO20084573L (no)
TW (1) TWI445073B (no)
WO (1) WO2007129555A1 (no)

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JP5302551B2 (ja) * 2008-02-28 2013-10-02 林純薬工業株式会社 シリコン異方性エッチング液組成物
KR101168589B1 (ko) 2008-03-26 2012-07-30 엘지전자 주식회사 계면 활성제를 이용한 실리콘 태양전지의 텍스처링 방법
DE102009060931A1 (de) * 2009-12-23 2011-06-30 Gebr. Schmid GmbH & Co., 72250 Verfahren und Vorrichtung zur Behandlung von Siliziumsubstraten
CN101792667A (zh) * 2010-04-01 2010-08-04 江阴市江化微电子材料有限公司 一种低张力ito蚀刻液
JP2011258767A (ja) * 2010-06-09 2011-12-22 Sharp Corp 太陽電池
KR20120015485A (ko) * 2010-08-12 2012-02-22 동우 화인켐 주식회사 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭 방법
KR20120015484A (ko) 2010-08-12 2012-02-22 동우 화인켐 주식회사 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭 방법
JP5648392B2 (ja) * 2010-09-22 2015-01-07 凸版印刷株式会社 反射型フォトマスクブランクおよびその製造方法
SG11201401176VA (en) * 2011-10-14 2014-10-30 Shuyan Xu Alkaline solution for texturing monocrystalline silicon substrate
WO2013089641A1 (en) * 2011-12-12 2013-06-20 Xu Shuyan Chemical texturing of monocrystalline silicon substrate
KR20130068759A (ko) * 2011-12-16 2013-06-26 동우 화인켐 주식회사 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭방법
US20150125985A1 (en) 2012-05-11 2015-05-07 Wako Pure Chemical Industries, Ltd. Etching fluid and production method for silicon-based substrate using same
JPWO2014010471A1 (ja) * 2012-07-09 2016-06-23 攝津製油株式会社 エッチング液、エッチング力回復剤、太陽電池用半導体基板の製造方法、及び太陽電池用半導体基板
CN105518834B (zh) * 2013-09-19 2018-02-16 摄津制油株式会社 半导体基板用蚀刻液
WO2016063881A1 (ja) 2014-10-21 2016-04-28 攝津製油株式会社 半導体基板用エッチング液
US20190214460A1 (en) * 2016-09-30 2019-07-11 Intel Corporation Fabricating nanowire transistors using directional selective etching
CN114792740B (zh) * 2022-03-25 2023-04-21 安徽华晟新能源科技有限公司 半导体衬底层的制备方法及太阳能电池的制备方法
CN115011348B (zh) * 2022-06-30 2023-12-29 湖北兴福电子材料股份有限公司 一种氮化铝蚀刻液及其应用

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Also Published As

Publication number Publication date
KR101010531B1 (ko) 2011-01-24
JP4795430B2 (ja) 2011-10-19
TWI445073B (zh) 2014-07-11
EP2015351A1 (en) 2009-01-14
JPWO2007129555A1 (ja) 2009-09-17
WO2007129555A1 (ja) 2007-11-15
MY150000A (en) 2013-11-15
TW200807547A (en) 2008-02-01
KR20080104030A (ko) 2008-11-28
CN101432855B (zh) 2011-03-16
CN101432855A (zh) 2009-05-13
US20090266414A1 (en) 2009-10-29

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