NO306529B1 - Transistor - Google Patents
TransistorInfo
- Publication number
- NO306529B1 NO306529B1 NO985472A NO985472A NO306529B1 NO 306529 B1 NO306529 B1 NO 306529B1 NO 985472 A NO985472 A NO 985472A NO 985472 A NO985472 A NO 985472A NO 306529 B1 NO306529 B1 NO 306529B1
- Authority
- NO
- Norway
- Prior art keywords
- electrode
- effect transistor
- field
- transistor
- semiconductor material
- Prior art date
Links
- 230000005669 field effect Effects 0.000 abstract 6
- 239000004065 semiconductor Substances 0.000 abstract 5
- 239000000463 material Substances 0.000 abstract 4
- 238000000034 method Methods 0.000 abstract 2
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 229910044991 metal oxide Inorganic materials 0.000 abstract 1
- 150000004706 metal oxides Chemical class 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
- H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/051—Manufacture or treatment of FETs having PN junction gates
- H10D30/0516—Manufacture or treatment of FETs having PN junction gates of FETs having PN heterojunction gates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/061—Manufacture or treatment of FETs having Schottky gates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/63—Vertical IGFETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6728—Vertical TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
- H10D30/83—FETs having PN junction gate electrodes
- H10D30/831—Vertical FETs having PN junction gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
Landscapes
- Thin Film Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Junction Field-Effect Transistors (AREA)
- Electronic Switches (AREA)
Priority Applications (14)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NO985472A NO306529B1 (no) | 1998-01-16 | 1998-11-23 | Transistor |
| CA002317759A CA2317759C (en) | 1998-01-16 | 1999-01-14 | A field-effect transistor |
| PCT/NO1999/000013 WO1999040631A1 (en) | 1998-01-16 | 1999-01-14 | A field-effect transistor |
| AU25520/99A AU732134C (en) | 1998-01-16 | 1999-01-14 | A field-effect transistor |
| DE69902441T DE69902441T2 (de) | 1998-01-16 | 1999-01-14 | Feldeffekttransistor |
| US09/380,611 US6429457B1 (en) | 1998-01-16 | 1999-01-14 | Field-effect transistor |
| EP99905363A EP1051754B1 (de) | 1998-01-16 | 1999-01-14 | Feldeffekttransistor |
| AT99905363T ATE222027T1 (de) | 1998-01-16 | 1999-01-14 | Feldeffekttransistor |
| ES99905363T ES2179619T3 (es) | 1998-01-16 | 1999-01-14 | Transistor con efecto de campo. |
| CNB998039977A CN1210808C (zh) | 1998-01-16 | 1999-01-14 | 场效应晶体管 |
| RU2000121548/28A RU2189665C2 (ru) | 1998-01-16 | 1999-01-14 | Полевой транзистор |
| KR10-2000-7007821A KR100368818B1 (ko) | 1998-01-16 | 1999-01-14 | 전계 효과 트랜지스터 |
| JP2000530947A JP3495703B2 (ja) | 1998-01-16 | 1999-01-14 | 電界効果トランジスタおよび電界効果トランジスタの製造方法 |
| DK99905363T DK1051754T3 (da) | 1998-01-16 | 1999-01-14 | Felteffekttransistor |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NO980224A NO306528B1 (no) | 1998-01-16 | 1998-01-16 | Felteffekttransistor |
| NO985472A NO306529B1 (no) | 1998-01-16 | 1998-11-23 | Transistor |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| NO985472D0 NO985472D0 (no) | 1998-11-23 |
| NO985472L NO985472L (no) | 1999-07-19 |
| NO306529B1 true NO306529B1 (no) | 1999-11-15 |
Family
ID=26648813
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NO985472A NO306529B1 (no) | 1998-01-16 | 1998-11-23 | Transistor |
Country Status (14)
| Country | Link |
|---|---|
| US (1) | US6429457B1 (de) |
| EP (1) | EP1051754B1 (de) |
| JP (1) | JP3495703B2 (de) |
| KR (1) | KR100368818B1 (de) |
| CN (1) | CN1210808C (de) |
| AT (1) | ATE222027T1 (de) |
| AU (1) | AU732134C (de) |
| CA (1) | CA2317759C (de) |
| DE (1) | DE69902441T2 (de) |
| DK (1) | DK1051754T3 (de) |
| ES (1) | ES2179619T3 (de) |
| NO (1) | NO306529B1 (de) |
| RU (1) | RU2189665C2 (de) |
| WO (1) | WO1999040631A1 (de) |
Families Citing this family (69)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6859548B2 (en) | 1996-09-25 | 2005-02-22 | Kabushiki Kaisha Toshiba | Ultrasonic picture processing method and ultrasonic picture processing apparatus |
| US6839158B2 (en) | 1997-08-28 | 2005-01-04 | E Ink Corporation | Encapsulated electrophoretic displays having a monolayer of capsules and materials and methods for making the same |
| US6842657B1 (en) | 1999-04-09 | 2005-01-11 | E Ink Corporation | Reactive formation of dielectric layers and protection of organic layers in organic semiconductor device fabrication |
| US7030412B1 (en) | 1999-05-05 | 2006-04-18 | E Ink Corporation | Minimally-patterned semiconductor devices for display applications |
| NO315728B1 (no) | 2000-03-22 | 2003-10-13 | Thin Film Electronics Asa | Multidimensjonal adresseringsarkitektur for elektroniske innretninger |
| JP2004507096A (ja) * | 2000-08-18 | 2004-03-04 | シーメンス アクチエンゲゼルシヤフト | 有機電界効果トランジスタ（ｏｆｅｔ），該有機電界効果トランジスタの製造方法、前記有機電界効果トランジスタから形成される集積回路、及び該集積回路の使用 |
| DE10043204A1 (de) | 2000-09-01 | 2002-04-04 | Siemens Ag | Organischer Feld-Effekt-Transistor, Verfahren zur Strukturierung eines OFETs und integrierte Schaltung |
| DE10045192A1 (de) | 2000-09-13 | 2002-04-04 | Siemens Ag | Organischer Datenspeicher, RFID-Tag mit organischem Datenspeicher, Verwendung eines organischen Datenspeichers |
| DE10061297C2 (de) | 2000-12-08 | 2003-05-28 | Siemens Ag | Verfahren zur Sturkturierung eines OFETs |
| DE10061299A1 (de) | 2000-12-08 | 2002-06-27 | Siemens Ag | Vorrichtung zur Feststellung und/oder Weiterleitung zumindest eines Umwelteinflusses, Herstellungsverfahren und Verwendung dazu |
| DE10105914C1 (de) | 2001-02-09 | 2002-10-10 | Siemens Ag | Organischer Feldeffekt-Transistor mit fotostrukturiertem Gate-Dielektrikum und ein Verfahren zu dessen Erzeugung |
| US6844608B2 (en) * | 2001-05-07 | 2005-01-18 | Advanced Micro Devices, Inc. | Reversible field-programmable electric interconnects |
| WO2002091385A1 (en) * | 2001-05-07 | 2002-11-14 | Advanced Micro Devices, Inc. | Molecular memory cell |
| US6627944B2 (en) | 2001-05-07 | 2003-09-30 | Advanced Micro Devices, Inc. | Floating gate memory device using composite molecular material |
| EP1388179A1 (de) * | 2001-05-07 | 2004-02-11 | Advanced Micro Devices, Inc. | Schaltelement mit speichereffekt |
| US6781868B2 (en) * | 2001-05-07 | 2004-08-24 | Advanced Micro Devices, Inc. | Molecular memory device |
| KR100900080B1 (ko) * | 2001-05-07 | 2009-06-01 | 어드밴스드 마이크로 디바이시즈, 인코포레이티드 | 자기 조립형 폴리머 막을 구비한 메모리 디바이스 및 그제조 방법 |
| JP4841751B2 (ja) * | 2001-06-01 | 2011-12-21 | 株式会社半導体エネルギー研究所 | 有機半導体装置及びその作製方法 |
| US6756620B2 (en) * | 2001-06-29 | 2004-06-29 | Intel Corporation | Low-voltage and interface damage-free polymer memory device |
| US6624457B2 (en) | 2001-07-20 | 2003-09-23 | Intel Corporation | Stepped structure for a multi-rank, stacked polymer memory device and method of making same |
| US6967640B2 (en) | 2001-07-27 | 2005-11-22 | E Ink Corporation | Microencapsulated electrophoretic display with integrated driver |
| US6806526B2 (en) | 2001-08-13 | 2004-10-19 | Advanced Micro Devices, Inc. | Memory device |
| US6858481B2 (en) | 2001-08-13 | 2005-02-22 | Advanced Micro Devices, Inc. | Memory device with active and passive layers |
| EP1434232B1 (de) | 2001-08-13 | 2007-09-19 | Advanced Micro Devices, Inc. | Speicherzelle |
| US6838720B2 (en) * | 2001-08-13 | 2005-01-04 | Advanced Micro Devices, Inc. | Memory device with active passive layers |
| US6768157B2 (en) | 2001-08-13 | 2004-07-27 | Advanced Micro Devices, Inc. | Memory device |
| DE10151036A1 (de) | 2001-10-16 | 2003-05-08 | Siemens Ag | Isolator für ein organisches Elektronikbauteil |
| DE10151440C1 (de) | 2001-10-18 | 2003-02-06 | Siemens Ag | Organisches Elektronikbauteil, Verfahren zu seiner Herstellung und seine Verwendung |
| DE10160732A1 (de) | 2001-12-11 | 2003-06-26 | Siemens Ag | Organischer Feld-Effekt-Transistor mit verschobener Schwellwertspannung und Verwendung dazu |
| JP4247377B2 (ja) * | 2001-12-28 | 2009-04-02 | 独立行政法人産業技術総合研究所 | 薄膜トランジスタ及びその製造方法 |
| KR100433407B1 (ko) * | 2002-02-06 | 2004-05-31 | 삼성광주전자 주식회사 | 업라이트형 진공청소기 |
| US6900851B2 (en) | 2002-02-08 | 2005-05-31 | E Ink Corporation | Electro-optic displays and optical systems for addressing such displays |
| US6885146B2 (en) | 2002-03-14 | 2005-04-26 | Semiconductor Energy Laboratory Co., Ltd. | Display device comprising substrates, contrast medium and barrier layers between contrast medium and each of substrates |
| DE10212640B4 (de) | 2002-03-21 | 2004-02-05 | Siemens Ag | Logische Bauteile aus organischen Feldeffekttransistoren |
| EP1367659B1 (de) * | 2002-05-21 | 2012-09-05 | Semiconductor Energy Laboratory Co., Ltd. | Organischer Feldeffekt-Transistor |
| KR100417461B1 (ko) * | 2002-07-12 | 2004-02-05 | 주식회사 하이닉스반도체 | 반도체 소자의 제조 방법 |
| US6821811B2 (en) | 2002-08-02 | 2004-11-23 | Semiconductor Energy Laboratory Co., Ltd. | Organic thin film transistor and method of manufacturing the same, and semiconductor device having the organic thin film transistor |
| JP2005537637A (ja) | 2002-08-23 | 2005-12-08 | ジーメンス アクツィエンゲゼルシャフト | 過電圧保護用の有機構成部品および関連する回路 |
| CN100364108C (zh) * | 2002-08-28 | 2008-01-23 | 中国科学院长春应用化学研究所 | 含有有机半导体的夹心型场效应晶体管及制作方法 |
| US7012276B2 (en) * | 2002-09-17 | 2006-03-14 | Advanced Micro Devices, Inc. | Organic thin film Zener diodes |
| CN1186822C (zh) | 2002-09-23 | 2005-01-26 | 中国科学院长春应用化学研究所 | 有机薄膜晶体管及制备方法 |
| DE10253154A1 (de) | 2002-11-14 | 2004-05-27 | Siemens Ag | Messgerät zur Bestimmung eines Analyten in einer Flüssigkeitsprobe |
| EP1563553B1 (de) | 2002-11-19 | 2007-02-14 | PolyIC GmbH & Co. KG | Organische elektronische schaltung mit stukturierter halbleitender funktionsschicht und herstellungsverfahren dazu |
| DE10302149A1 (de) | 2003-01-21 | 2005-08-25 | Siemens Ag | Verwendung leitfähiger Carbon-black/Graphit-Mischungen für die Herstellung von low-cost Elektronik |
| US7132680B2 (en) * | 2003-06-09 | 2006-11-07 | International Business Machines Corporation | Organic field-effect transistor and method of making same based on polymerizable self-assembled monolayers |
| EP1498957A1 (de) * | 2003-07-14 | 2005-01-19 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Feldeffekttransistor und Verfahren zum Herstellen eines Feldeffekttransistors |
| DE10339036A1 (de) | 2003-08-25 | 2005-03-31 | Siemens Ag | Organisches elektronisches Bauteil mit hochaufgelöster Strukturierung und Herstellungsverfahren dazu |
| DE10340644B4 (de) | 2003-09-03 | 2010-10-07 | Polyic Gmbh & Co. Kg | Mechanische Steuerelemente für organische Polymerelektronik |
| US7659138B2 (en) * | 2003-12-26 | 2010-02-09 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing an organic semiconductor element |
| US7554121B2 (en) | 2003-12-26 | 2009-06-30 | Semiconductor Energy Laboratory Co., Ltd. | Organic semiconductor device |
| CA2585190A1 (en) * | 2004-11-10 | 2006-05-18 | Canon Kabushiki Kaisha | Amorphous oxide and field effect transistor |
| KR100911698B1 (ko) * | 2004-11-10 | 2009-08-10 | 캐논 가부시끼가이샤 | 비정질 산화물을 사용한 전계 효과 트랜지스터 |
| RU2004133958A (ru) * | 2004-11-23 | 2006-05-10 | Брон Цой (RU) | Пучковый микроэлектронный элемент |
| DE102005009820A1 (de) | 2005-03-01 | 2006-09-07 | Polyic Gmbh & Co. Kg | Elektronikbaugruppe mit organischen Logik-Schaltelementen |
| JP4667096B2 (ja) * | 2005-03-25 | 2011-04-06 | 株式会社半導体エネルギー研究所 | 有機半導体装置及びその作製方法 |
| RU2371809C1 (ru) * | 2005-09-16 | 2009-10-27 | Кэнон Кабусики Кайся | Полевой транзистор, имеющий канал, содержащий оксидный полупроводниковый материал, включающий в себя индий и цинк |
| CN101661993B (zh) * | 2008-08-28 | 2011-10-26 | 中国科学院微电子研究所 | 应用于有机电路的双金属电极结构及其制备方法 |
| GB0912034D0 (en) | 2009-07-10 | 2009-08-19 | Cambridge Entpr Ltd | Patterning |
| GB0913456D0 (en) | 2009-08-03 | 2009-09-16 | Cambridge Entpr Ltd | Printed electronic device |
| CN102779855B (zh) * | 2012-07-06 | 2015-08-12 | 哈尔滨理工大学 | 双肖特基结氧化锌半导体薄膜晶体管及制作方法 |
| US10032924B2 (en) | 2014-03-31 | 2018-07-24 | The Hong Kong University Of Science And Technology | Metal oxide thin film transistor with channel, source and drain regions respectively capped with covers of different gas permeability |
| CN104465989B (zh) * | 2014-12-26 | 2017-02-22 | 中国科学院微电子研究所 | 三端原子开关器件及其制备方法 |
| US9653493B2 (en) * | 2015-06-12 | 2017-05-16 | Eastman Kodak Company | Bottom-gate and top-gate VTFTs on common structure |
| US10504939B2 (en) | 2017-02-21 | 2019-12-10 | The Hong Kong University Of Science And Technology | Integration of silicon thin-film transistors and metal-oxide thin film transistors |
| CN109037347A (zh) * | 2018-07-28 | 2018-12-18 | 张玉英 | 一种具有三明治结构的钛酸铋薄膜晶体管及制备方法 |
| KR102551995B1 (ko) * | 2018-11-16 | 2023-07-06 | 엘지디스플레이 주식회사 | 수직 구조 트랜지스터 및 전자장치 |
| KR102580260B1 (ko) | 2021-10-12 | 2023-09-19 | 성균관대학교산학협력단 | 수직 성장한 결정립을 가지는 활성층을 포함하는 스페이스-프리 수직 전계 효과 트랜지스터 |
| CN117810269A (zh) * | 2021-11-15 | 2024-04-02 | 武汉华星光电半导体显示技术有限公司 | 薄膜晶体管、电子装置及其制备方法及显示装置 |
| CN119545863B (zh) * | 2023-08-24 | 2025-11-21 | 上海交通大学 | 一种短沟道场效应晶体管、其制备方法及电子器件 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4587540A (en) * | 1982-04-05 | 1986-05-06 | International Business Machines Corporation | Vertical MESFET with mesa step defining gate length |
| JPS59208783A (ja) * | 1983-05-12 | 1984-11-27 | Seiko Instr & Electronics Ltd | 薄膜トランジスタ |
| US4677451A (en) * | 1985-05-24 | 1987-06-30 | Hughes Aircraft Company | Vertical channel field effect transistor |
| US4735918A (en) * | 1985-05-24 | 1988-04-05 | Hughes Aircraft Company | Vertical channel field effect transistor |
| SU1482479A1 (ru) * | 1986-01-31 | 1996-11-27 | Институт прикладной физики АН СССР | Полевой вертикальный транзистор |
| US4903089A (en) * | 1988-02-02 | 1990-02-20 | Massachusetts Institute Of Technology | Vertical transistor device fabricated with semiconductor regrowth |
| US5047812A (en) * | 1989-02-27 | 1991-09-10 | Motorola, Inc. | Insulated gate field effect device |
| US5206531A (en) * | 1990-03-19 | 1993-04-27 | Lockheed Sanders, Inc. | Semiconductor device having a control gate with reduced semiconductor contact |
| RU2045112C1 (ru) * | 1992-03-19 | 1995-09-27 | Нижегородский государственный университет им.Н.И.Лобачевского | Полевой вертикальный транзистор |
| JPH0793441B2 (ja) | 1992-04-24 | 1995-10-09 | ヒュンダイ エレクトロニクス インダストリーズ カンパニー リミテッド | 薄膜トランジスタ及びその製造方法 |
| US5668391A (en) * | 1995-08-02 | 1997-09-16 | Lg Semicon Co., Ltd. | Vertical thin film transistor |
| US5780911A (en) | 1995-11-29 | 1998-07-14 | Lg Semicon Co., Ltd. | Thin film transistor and method for fabricating the same |
| US5990509A (en) * | 1997-01-22 | 1999-11-23 | International Business Machines Corporation | 2F-square memory cell for gigabit memory applications |
-
1998
- 1998-11-23 NO NO985472A patent/NO306529B1/no not_active Application Discontinuation
-
1999
- 1999-01-14 RU RU2000121548/28A patent/RU2189665C2/ru not_active IP Right Cessation
- 1999-01-14 US US09/380,611 patent/US6429457B1/en not_active Expired - Fee Related
- 1999-01-14 DE DE69902441T patent/DE69902441T2/de not_active Expired - Fee Related
- 1999-01-14 ES ES99905363T patent/ES2179619T3/es not_active Expired - Lifetime
- 1999-01-14 CN CNB998039977A patent/CN1210808C/zh not_active Expired - Fee Related
- 1999-01-14 AU AU25520/99A patent/AU732134C/en not_active Ceased
- 1999-01-14 AT AT99905363T patent/ATE222027T1/de not_active IP Right Cessation
- 1999-01-14 CA CA002317759A patent/CA2317759C/en not_active Expired - Fee Related
- 1999-01-14 KR KR10-2000-7007821A patent/KR100368818B1/ko not_active Expired - Fee Related
- 1999-01-14 WO PCT/NO1999/000013 patent/WO1999040631A1/en not_active Ceased
- 1999-01-14 DK DK99905363T patent/DK1051754T3/da active
- 1999-01-14 EP EP99905363A patent/EP1051754B1/de not_active Expired - Lifetime
- 1999-01-14 JP JP2000530947A patent/JP3495703B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| WO1999040631A1 (en) | 1999-08-12 |
| JP3495703B2 (ja) | 2004-02-09 |
| CN1210808C (zh) | 2005-07-13 |
| AU732134B2 (en) | 2001-04-12 |
| DE69902441T2 (de) | 2003-04-17 |
| US6429457B1 (en) | 2002-08-06 |
| ATE222027T1 (de) | 2002-08-15 |
| DE69902441D1 (de) | 2002-09-12 |
| JP2002503035A (ja) | 2002-01-29 |
| DK1051754T3 (da) | 2002-09-02 |
| ES2179619T3 (es) | 2003-01-16 |
| NO985472L (no) | 1999-07-19 |
| EP1051754B1 (de) | 2002-08-07 |
| RU2189665C2 (ru) | 2002-09-20 |
| KR20010034186A (ko) | 2001-04-25 |
| KR100368818B1 (ko) | 2003-01-24 |
| CA2317759A1 (en) | 1999-08-12 |
| AU2552099A (en) | 1999-08-23 |
| CA2317759C (en) | 2004-06-22 |
| NO985472D0 (no) | 1998-11-23 |
| EP1051754A1 (de) | 2000-11-15 |
| CN1293825A (zh) | 2001-05-02 |
| AU732134C (en) | 2001-11-22 |
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