NO330157B1 - Fremgangsmate og apparatur for fremstilling av silisium av hoy renhet - Google Patents

Fremgangsmate og apparatur for fremstilling av silisium av hoy renhet Download PDF

Info

Publication number: NO330157B1
Authority: NO; Norway
Prior art keywords: sio; solid; gas; temperature; high purity
Prior art date: 1997-12-25

Application number

NO20003316A

Other languages

English (en)

Norwegian (no)

Other versions

NO20003316D0 (no

NO20003316L (no

Inventor

Jiro Kondo

Haruo Shimada

Shinji Tokumaru

Ryuji Watanabe

Atsushi Nogami

Akihito Kiyose

Original Assignee

Nippon Steel Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1997-12-25

Filing date

2000-06-23

Publication date

2011-02-28

2000-06-23 Application filed by Nippon Steel Corp filed Critical Nippon Steel Corp

2000-06-23 Publication of NO20003316D0 publication Critical patent/NO20003316D0/no

2000-08-14 Publication of NO20003316L publication Critical patent/NO20003316L/no

2011-02-28 Publication of NO330157B1 publication Critical patent/NO330157B1/no

Links

238000000034 method Methods 0.000 title claims description 68
229910052710 silicon Inorganic materials 0.000 title claims description 51
239000010703 silicon Substances 0.000 title claims description 28
230000008569 process Effects 0.000 title description 24
LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims description 1088
239000007787 solid Substances 0.000 claims description 394
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 222
239000007789 gas Substances 0.000 claims description 215
238000010438 heat treatment Methods 0.000 claims description 142
235000012239 silicon dioxide Nutrition 0.000 claims description 122
238000006243 chemical reaction Methods 0.000 claims description 90
238000004519 manufacturing process Methods 0.000 claims description 88
229910052681 coesite Inorganic materials 0.000 claims description 87
229910052906 cristobalite Inorganic materials 0.000 claims description 87
229910052682 stishovite Inorganic materials 0.000 claims description 87
229910052905 tridymite Inorganic materials 0.000 claims description 87
239000000377 silicon dioxide Substances 0.000 claims description 75
239000007858 starting material Substances 0.000 claims description 66
OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 63
229910052698 phosphorus Inorganic materials 0.000 claims description 63
239000011574 phosphorus Substances 0.000 claims description 63
ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 55
229910052796 boron Inorganic materials 0.000 claims description 55
230000008021 deposition Effects 0.000 claims description 52
239000012535 impurity Substances 0.000 claims description 50
238000001816 cooling Methods 0.000 claims description 46
238000007323 disproportionation reaction Methods 0.000 claims description 42
230000008018 melting Effects 0.000 claims description 37
238000002844 melting Methods 0.000 claims description 37
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 27
238000000746 purification Methods 0.000 claims description 26
229910052799 carbon Inorganic materials 0.000 claims description 24
239000002245 particle Substances 0.000 claims description 24
OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 20
230000001590 oxidative effect Effects 0.000 claims description 18
239000000843 powder Substances 0.000 claims description 17
238000011109 contamination Methods 0.000 claims description 16
239000007788 liquid Substances 0.000 claims description 16
230000007246 mechanism Effects 0.000 claims description 13
238000001704 evaporation Methods 0.000 claims description 12
230000008020 evaporation Effects 0.000 claims description 12
239000000203 mixture Substances 0.000 claims description 12
239000003344 environmental pollutant Substances 0.000 claims description 10
229910052760 oxygen Inorganic materials 0.000 claims description 10
231100000719 pollutant Toxicity 0.000 claims description 10
238000000605 extraction Methods 0.000 claims description 9
230000032258 transport Effects 0.000 claims description 8
229910000519 Ferrosilicon Inorganic materials 0.000 claims description 7
238000005979 thermal decomposition reaction Methods 0.000 claims description 7
238000011084 recovery Methods 0.000 claims description 6
239000000112 cooling gas Substances 0.000 claims description 5
239000000284 extract Substances 0.000 claims description 2
230000007723 transport mechanism Effects 0.000 claims description 2
238000005192 partition Methods 0.000 claims 1
238000000151 deposition Methods 0.000 description 51
239000010453 quartz Substances 0.000 description 48
229910052782 aluminium Inorganic materials 0.000 description 42
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 42
XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 34
239000000356 contaminant Substances 0.000 description 34
238000006722 reduction reaction Methods 0.000 description 29
239000001257 hydrogen Substances 0.000 description 26
229910052739 hydrogen Inorganic materials 0.000 description 26
230000009467 reduction Effects 0.000 description 26
238000000921 elemental analysis Methods 0.000 description 23
KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 20
229910004298 SiO 2 Inorganic materials 0.000 description 20
UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 19
XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 18
239000007795 chemical reaction product Substances 0.000 description 18
229910052786 argon Inorganic materials 0.000 description 17
239000000047 product Substances 0.000 description 17
239000006227 byproduct Substances 0.000 description 16
229910052751 metal Inorganic materials 0.000 description 14
239000002184 metal Substances 0.000 description 14
238000002309 gasification Methods 0.000 description 12
239000000463 material Substances 0.000 description 12
229910010271 silicon carbide Inorganic materials 0.000 description 12
HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 12
238000005204 segregation Methods 0.000 description 11
239000002932 luster Substances 0.000 description 10
238000000926 separation method Methods 0.000 description 10
229910052742 iron Inorganic materials 0.000 description 9
238000007711 solidification Methods 0.000 description 9
230000008023 solidification Effects 0.000 description 9
239000013585 weight reducing agent Substances 0.000 description 9
239000003638 chemical reducing agent Substances 0.000 description 8
230000000694 effects Effects 0.000 description 8
239000010419 fine particle Substances 0.000 description 8
239000011261 inert gas Substances 0.000 description 8
150000002739 metals Chemical class 0.000 description 8
229910052814 silicon oxide Inorganic materials 0.000 description 8
238000004140 cleaning Methods 0.000 description 7
229910001392 phosphorus oxide Inorganic materials 0.000 description 7
LFGREXWGYUGZLY-UHFFFAOYSA-N phosphoryl Chemical class [P]=O LFGREXWGYUGZLY-UHFFFAOYSA-N 0.000 description 7
KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 6
239000012141 concentrate Substances 0.000 description 6
150000002431 hydrogen Chemical class 0.000 description 6
238000005406 washing Methods 0.000 description 6
238000009826 distribution Methods 0.000 description 5
238000005059 solid analysis Methods 0.000 description 5
239000000126 substance Substances 0.000 description 5
238000007740 vapor deposition Methods 0.000 description 5
IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
238000010276 construction Methods 0.000 description 4
229910044991 metal oxide Inorganic materials 0.000 description 4
150000004706 metal oxides Chemical class 0.000 description 4
239000012071 phase Substances 0.000 description 4
BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 3
BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
230000008901 benefit Effects 0.000 description 3
238000009835 boiling Methods 0.000 description 3
229910052810 boron oxide Inorganic materials 0.000 description 3
230000000052 comparative effect Effects 0.000 description 3
239000013078 crystal Substances 0.000 description 3
JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 3
229910052734 helium Inorganic materials 0.000 description 3
239000001307 helium Substances 0.000 description 3
SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 3
230000006872 improvement Effects 0.000 description 3
239000007791 liquid phase Substances 0.000 description 3
239000003921 oil Substances 0.000 description 3
230000003647 oxidation Effects 0.000 description 3
238000007254 oxidation reaction Methods 0.000 description 3
229910052763 palladium Inorganic materials 0.000 description 3
229910000077 silane Inorganic materials 0.000 description 3
239000005049 silicon tetrachloride Substances 0.000 description 3
ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 3
239000005052 trichlorosilane Substances 0.000 description 3
UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 2
UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
230000015572 biosynthetic process Effects 0.000 description 2
229910002091 carbon monoxide Inorganic materials 0.000 description 2
229910010293 ceramic material Inorganic materials 0.000 description 2
230000008859 change Effects 0.000 description 2
230000012010 growth Effects 0.000 description 2
XZWYZXLIPXDOLR-UHFFFAOYSA-N metformin Chemical compound CN(C)C(=N)NC(N)=N XZWYZXLIPXDOLR-UHFFFAOYSA-N 0.000 description 2
VNWKTOKETHGBQD-UHFFFAOYSA-N methane Natural products C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
229910052757 nitrogen Inorganic materials 0.000 description 2
229910000510 noble metal Inorganic materials 0.000 description 2
230000003287 optical effect Effects 0.000 description 2
239000001301 oxygen Substances 0.000 description 2
229910052697 platinum Inorganic materials 0.000 description 2
238000011946 reduction process Methods 0.000 description 2
PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical class [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
238000002441 X-ray diffraction Methods 0.000 description 1
KRJBVTKYLBPUJC-UHFFFAOYSA-N [B+3].[O-2].[Al+3].[O-2].[O-2] Chemical compound [B+3].[O-2].[Al+3].[O-2].[O-2] KRJBVTKYLBPUJC-UHFFFAOYSA-N 0.000 description 1
230000004931 aggregating effect Effects 0.000 description 1
238000004220 aggregation Methods 0.000 description 1
230000002776 aggregation Effects 0.000 description 1
230000004075 alteration Effects 0.000 description 1
239000004411 aluminium Substances 0.000 description 1
238000004458 analytical method Methods 0.000 description 1
238000013459 approach Methods 0.000 description 1
238000010420 art technique Methods 0.000 description 1
125000004429 atom Chemical group 0.000 description 1
150000001805 chlorine compounds Chemical class 0.000 description 1
238000005345 coagulation Methods 0.000 description 1
230000015271 coagulation Effects 0.000 description 1
239000000470 constituent Substances 0.000 description 1
238000007796 conventional method Methods 0.000 description 1
238000005202 decontamination Methods 0.000 description 1
230000003588 decontaminative effect Effects 0.000 description 1
230000003247 decreasing effect Effects 0.000 description 1
238000013461 design Methods 0.000 description 1
238000009792 diffusion process Methods 0.000 description 1
238000009837 dry grinding Methods 0.000 description 1
238000001941 electron spectroscopy Methods 0.000 description 1
238000011049 filling Methods 0.000 description 1
238000001914 filtration Methods 0.000 description 1
238000007429 general method Methods 0.000 description 1
239000012943 hotmelt Substances 0.000 description 1
-1 hydrogen monoxide Chemical class 0.000 description 1
230000006698 induction Effects 0.000 description 1
230000004807 localization Effects 0.000 description 1
TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
125000004430 oxygen atom Chemical group O* 0.000 description 1
238000010298 pulverizing process Methods 0.000 description 1
238000010791 quenching Methods 0.000 description 1
230000000171 quenching effect Effects 0.000 description 1
230000035484 reaction time Effects 0.000 description 1
230000001105 regulatory effect Effects 0.000 description 1
238000011160 research Methods 0.000 description 1
239000011435 rock Substances 0.000 description 1
239000004065 semiconductor Substances 0.000 description 1
238000007873 sieving Methods 0.000 description 1
239000011856 silicon-based particle Substances 0.000 description 1
238000004611 spectroscopical analysis Methods 0.000 description 1
230000003068 static effect Effects 0.000 description 1
238000005728 strengthening Methods 0.000 description 1
230000001629 suppression Effects 0.000 description 1
238000002207 thermal evaporation Methods 0.000 description 1
239000012808 vapor phase Substances 0.000 description 1

Classifications

- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/037—Purification
- C01B33/039—Purification by conversion of the silicon into a compound, optional purification of the compound, and reconversion into silicon
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J12/00—Chemical processes in general for reacting gaseous media with gaseous media; Apparatus specially adapted therefor
- B01J12/02—Chemical processes in general for reacting gaseous media with gaseous media; Apparatus specially adapted therefor for obtaining at least one reaction product which, at normal temperature, is in the solid state
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/0006—Controlling or regulating processes
- B01J19/0013—Controlling the temperature of the process
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J7/00—Apparatus for generating gases
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/037—Purification
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/00049—Controlling or regulating processes
- B01J2219/00051—Controlling the temperature
- B01J2219/00074—Controlling the temperature by indirect heating or cooling employing heat exchange fluids
- B01J2219/00087—Controlling the temperature by indirect heating or cooling employing heat exchange fluids with heat exchange elements outside the reactor
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/00049—Controlling or regulating processes
- B01J2219/00051—Controlling the temperature
- B01J2219/00139—Controlling the temperature using electromagnetic heating
- B01J2219/00141—Microwaves
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/00049—Controlling or regulating processes
- B01J2219/00051—Controlling the temperature
- B01J2219/00159—Controlling the temperature controlling multiple zones along the direction of flow, e.g. pre-heating and after-cooling
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/00049—Controlling or regulating processes
- B01J2219/00164—Controlling or regulating processes controlling the flow
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/00049—Controlling or regulating processes
- B01J2219/00184—Controlling or regulating processes controlling the weight of reactants in the reactor vessel

Landscapes

Chemical & Material Sciences (AREA)
Organic Chemistry (AREA)
Inorganic Chemistry (AREA)
Chemical Kinetics & Catalysis (AREA)
Silicon Compounds (AREA)

NO20003316A 1997-12-25 2000-06-23 Fremgangsmate og apparatur for fremstilling av silisium av hoy renhet NO330157B1 (no)

Applications Claiming Priority (3)

Application Number	Priority Date	Filing Date	Title
JP35765697		1997-12-25
JP7612198		1998-03-24
PCT/JP1998/005968 WO1999033749A1 (fr)	1997-12-25	1998-12-25	PROCEDE DE PREPARATION DE Si EXTREMEMENT PUR, ET EQUIPEMENT POUR LA MISE EN OEUVRE DE CE PROCEDE

Publications (3)

Publication Number	Publication Date
NO20003316D0 NO20003316D0 (no)	2000-06-23
NO20003316L NO20003316L (no)	2000-08-14
NO330157B1 true NO330157B1 (no)	2011-02-28

Family

ID=26417274

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
NO20003316A NO330157B1 (no)	1997-12-25	2000-06-23	Fremgangsmate og apparatur for fremstilling av silisium av hoy renhet

Country Status (11)

Country	Link
US (1)	US6395249B1 (de)
EP (1)	EP1057782B1 (de)
JP (1)	JP3735253B2 (de)
CN (1)	CN1207192C (de)
AU (1)	AU738233C (de)
BR (1)	BR9814468A (de)
CA (1)	CA2316180C (de)
DE (1)	DE69828201T2 (de)
ES (1)	ES2234170T3 (de)
NO (1)	NO330157B1 (de)
WO (1)	WO1999033749A1 (de)

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
EP1517964A1 (de) *	2002-06-18	2005-03-30	Ciba SC Holding AG	Planparallele körper aus silizium/siliziumoxid
RU2237015C2 (ru) *	2002-07-22	2004-09-27	Общество с ограниченной ответственностью "Компания ЭнергоРегионСервис"	Способ получения диоксида кремния из отходов ферросплавного производства
JP4436904B2 (ja)	2002-07-23	2010-03-24	新日鉄マテリアルズ株式会社	Ｓｉ製造方法
NO333319B1 (no) *	2003-12-29	2013-05-06	Elkem As	Silisiummateriale for fremstilling av solceller
JP2005206440A (ja) *	2004-01-26	2005-08-04	Nippon Steel Corp	高純度シリコン製造方法
JP2005206441A (ja) *	2004-01-26	2005-08-04	Nippon Steel Corp	高純度Ｓｉ製造用原材料及びその製造方法
JP4672264B2 (ja) *	2004-01-29	2011-04-20	新日鉄マテリアルズ株式会社	ＳｉＯの精製方法及び得られたＳｉＯを用いる高純度シリコンの製造方法
JP2005220002A (ja) *	2004-02-09	2005-08-18	Nippon Steel Corp	ＳｉＯの精製装置、かかる精製装置を用いるＳｉＯの精製方法及び得られたＳｉＯを用いる高純度シリコンの製造方法
JP4731818B2 (ja) *	2004-02-10	2011-07-27	新日鉄マテリアルズ株式会社	高純度ＳｉＯ固体の製造方法及び製造装置
JP2005225729A (ja) *	2004-02-13	2005-08-25	Nippon Steel Corp	ＳｉＯの精製装置、かかる装置を用いるＳｉＯの精製方法及び高純度シリコンの製造方法
DE102004010055A1 (de) *	2004-03-02	2005-09-22	Degussa Ag	Verfahren zur Herstellung von Silicium
KR20070020130A (ko) *	2004-07-29	2007-02-16	스미토모 티타늄 가부시키가이샤	이차전지용 ＳｉＯ분말 및 그 제조방법
JP4674349B2 (ja) *	2004-10-19	2011-04-20	独立行政法人物質・材料研究機構	結晶性珪素マイクロチューブ及びその製造方法
JP4980603B2 (ja) *	2005-10-19	2012-07-18	株式会社ブリヂストン	ケイ素微粒子の製造方法
WO2008026728A1 (en) *	2006-08-31	2008-03-06	Mitsubishi Materials Corporation	Metallic silicon and process for producing the same
JP5218934B2 (ja) *	2006-08-31	2013-06-26	三菱マテリアル株式会社	金属シリコンとその製造方法
DE102006056482B4 (de) *	2006-11-30	2010-07-15	Sunicon Ag	Vorrichtung und Verfahren zum Aufbereiten von Nichteisenmetallen
WO2008134568A2 (en) *	2007-04-25	2008-11-06	Kagan Ceran	Deposition of high-purity silicon via high-surface area gas-solid or gas-liquid interfaces and recovery via liqued phase
JP5311930B2 (ja) *	2007-08-29	2013-10-09	住友化学株式会社	シリコンの製造方法
CN101122047B (zh) *	2007-09-14	2011-02-16	李绍光	一种太阳能电池用多晶硅制造方法
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CA2316180A1 (en)	1999-07-08
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NO20003316D0 (no)	2000-06-23
EP1057782A1 (de)	2000-12-06
US6395249B1 (en)	2002-05-28
EP1057782A4 (de)	2004-03-24
AU738233B2 (en)	2001-09-13
DE69828201T2 (de)	2005-12-15
CA2316180C (en)	2004-04-20
AU1691199A (en)	1999-07-19
EP1057782B1 (de)	2004-12-15
CN1284046A (zh)	2001-02-14
CN1207192C (zh)	2005-06-22
ES2234170T3 (es)	2005-06-16
NO20003316L (no)	2000-08-14
BR9814468A (pt)	2000-10-10
DE69828201D1 (de)	2005-01-20

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