NO813769L - Hoeytrykks plasmahydrering av silisium-tetraklorid - Google Patents

Hoeytrykks plasmahydrering av silisium-tetraklorid

Info

Publication number
NO813769L
NO813769L NO813769A NO813769A NO813769L NO 813769 L NO813769 L NO 813769L NO 813769 A NO813769 A NO 813769A NO 813769 A NO813769 A NO 813769A NO 813769 L NO813769 L NO 813769L
Authority
NO
Norway
Prior art keywords
plasma
pressure plasma
sicl4
gas
silicon
Prior art date
Application number
NO813769A
Other languages
English (en)
Norwegian (no)
Inventor
Murray John Rice Jr
Kalluri Ramulingeswara
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of NO813769L publication Critical patent/NO813769L/no

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/08—Compounds containing halogen
    • C01B33/107—Halogenated silanes
    • C01B33/1071—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J12/00—Chemical processes in general for reacting gaseous media with gaseous media; Apparatus specially adapted therefor
    • B01J12/002—Chemical processes in general for reacting gaseous media with gaseous media; Apparatus specially adapted therefor carried out in the plasma state
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J2219/0894—Processes carried out in the presence of a plasma
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S423/00—Chemistry of inorganic compounds
    • Y10S423/09—Reaction techniques
    • Y10S423/10—Plasma energized

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Silicon Compounds (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
NO813769A 1980-05-09 1981-11-09 Hoeytrykks plasmahydrering av silisium-tetraklorid NO813769L (no)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/148,094 US4309259A (en) 1980-05-09 1980-05-09 High pressure plasma hydrogenation of silicon tetrachloride

Publications (1)

Publication Number Publication Date
NO813769L true NO813769L (no) 1981-11-12

Family

ID=22524246

Family Applications (1)

Application Number Title Priority Date Filing Date
NO813769A NO813769L (no) 1980-05-09 1981-11-09 Hoeytrykks plasmahydrering av silisium-tetraklorid

Country Status (7)

Country Link
US (1) US4309259A (da)
EP (1) EP0052615B1 (da)
JP (1) JPS6117765B2 (da)
DK (1) DK4282A (da)
IT (1) IT1170944B (da)
NO (1) NO813769L (da)
WO (1) WO1981003168A1 (da)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2530638A1 (fr) * 1982-07-26 1984-01-27 Rhone Poulenc Spec Chim Procede de preparation d'un melange a base de trichlorosilane utilisable pour la preparation de silicium de haute purete
US4542004A (en) * 1984-03-28 1985-09-17 Solavolt International Process for the hydrogenation of silicon tetrachloride
DE3843313A1 (de) * 1988-12-22 1990-06-28 Wacker Chemitronic Verfahren zur entfernung von gasfoermigen kontaminierenden, insbesondere dotierstoffverbindungen aus halogensilanverbindungen enthaltenden traegergasen
JP2978746B2 (ja) * 1995-10-31 1999-11-15 日本電気株式会社 半導体装置の製造方法
RU2142909C1 (ru) * 1998-07-30 1999-12-20 Институт химии высокочистых веществ РАН Способ получения высокочистого трихлорсилана и устройство для его осуществления
RU2147292C1 (ru) * 1999-02-18 2000-04-10 Институт неорганической химии СО РАН Способ получения трихлорсилана
DE102005024041A1 (de) 2005-05-25 2006-11-30 City Solar Ag Verfahren zur Herstellung von Silicium aus Halogensilanen
DE102005041137A1 (de) * 2005-08-30 2007-03-01 Degussa Ag Reaktor, Anlage und großtechnisches Verfahren zur kontinuierlichen Herstellung von hochreinem Siliciumtetrachlorid oder hochreinem Germaniumtetrachlorid
DE102006034061A1 (de) * 2006-07-20 2008-01-24 REV Renewable Energy Ventures, Inc., Aloha Polysilanverarbeitung und Verwendung
DE102006043929B4 (de) * 2006-09-14 2016-10-06 Spawnt Private S.À.R.L. Verfahren zur Herstellung von festen Polysilanmischungen
DE102006050329B3 (de) † 2006-10-25 2007-12-13 Wacker Chemie Ag Verfahren zur Herstellung von Trichlorsilan
DE102007013219A1 (de) * 2007-03-15 2008-09-18 Rev Renewable Energy Ventures, Inc. Plasmagestützte Synthese
RU2350558C2 (ru) * 2007-05-02 2009-03-27 Федеральное государственное унитарное предприятие "Горно-химический комбинат" Способ получения трихлорсилана плазмохимическим гидрированием тетрахлорида кремния и устройство для его осуществления
JP4714196B2 (ja) * 2007-09-05 2011-06-29 信越化学工業株式会社 トリクロロシランの製造方法および多結晶シリコンの製造方法
CN101254921B (zh) * 2008-03-19 2010-10-06 四川金谷多晶硅有限公司 一种转化四氯化硅制取三氯氢硅和多晶硅的方法
DE102008025261B4 (de) 2008-05-27 2010-03-18 Rev Renewable Energy Ventures, Inc. Halogeniertes Polysilan und plasmachemisches Verfahren zu dessen Herstellung
DE102008025260B4 (de) 2008-05-27 2010-03-18 Rev Renewable Energy Ventures, Inc. Halogeniertes Polysilan und thermisches Verfahren zu dessen Herstellung
EP2420113A4 (en) 2009-04-14 2014-04-02 Rf Thummim Technologies Inc METHOD AND DEVICE FOR EXPLORING RESONANCES IN MOLECULES
US20120070362A1 (en) * 2009-05-22 2012-03-22 Hemlock Semiconductor Corporation Quantitative measurement of gas phase process intermediates using raman spectroscopy
DE102009056437B4 (de) 2009-12-02 2013-06-27 Spawnt Private S.À.R.L. Verfahren und Vorrichtung zur Herstellung von kurzkettigen halogenierten Polysilanen
DE102009056731A1 (de) 2009-12-04 2011-06-09 Rev Renewable Energy Ventures, Inc. Halogenierte Polysilane und Polygermane
CA2830480A1 (en) 2010-03-17 2011-09-22 Rf Thummim Technologies, Inc. Method and apparatus for electromagnetically producing a disturbance in a medium with simultaneous resonance of acoustic waves created by the disturbance
US8029756B1 (en) 2010-03-30 2011-10-04 Peak Sun Sillcon Corporation Closed-loop silicon production
DE102010025948A1 (de) 2010-07-02 2012-01-05 Spawnt Private S.À.R.L. Polysilane mittlerer Kettenlänge und Verfahren zu deren Herstellung
EP2688839B1 (de) * 2011-03-25 2016-09-14 Evonik Degussa GmbH Verwendung von siliziumcarbidrohren mit flansch- oder bördelende
KR101329750B1 (ko) * 2011-05-18 2013-11-14 (주)그린사이언스 플라즈마 수소화 반응 장치
CN104261413B (zh) * 2014-09-19 2016-03-23 天津大学 低温等离子体还原四氯化硅生产三氯氢硅方法及其装置
CN106495165B (zh) * 2016-11-23 2018-02-16 亚洲硅业（青海）有限公司 一种以四氯化硅制备三氯氢硅的装置及方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB838378A (en) * 1956-10-01 1960-06-22 Saint Gobain An improved process for the production of metals and other chemical elements of metallic character in a state of high purity
US3933985A (en) * 1971-09-24 1976-01-20 Motorola, Inc. Process for production of polycrystalline silicon
US3840750A (en) * 1972-11-06 1974-10-08 Plasmachem Plasma apparatus for carrying out high temperature chemical reactions
US4102985A (en) * 1977-01-06 1978-07-25 Westinghouse Electric Corp. Arc heater production of silicon involving a hydrogen reduction

Also Published As

Publication number Publication date
WO1981003168A1 (en) 1981-11-12
IT8148392A1 (it) 1982-11-04
JPS6117765B2 (da) 1986-05-09
EP0052615A1 (en) 1982-06-02
JPS57500559A (da) 1982-04-01
DK4282A (da) 1982-01-08
US4309259A (en) 1982-01-05
IT1170944B (it) 1987-06-03
EP0052615B1 (en) 1985-01-16
EP0052615A4 (en) 1982-09-03
IT8148392A0 (it) 1981-05-04

Similar Documents

Publication Publication Date Title
NO813769L (no) Hoeytrykks plasmahydrering av silisium-tetraklorid
US4830702A (en) Hollow cathode plasma assisted apparatus and method of diamond synthesis
US4870245A (en) Plasma enhanced thermal treatment apparatus
US4924061A (en) Microwave plasma torch, device comprising such a torch and process for manufacturing powder by the use thereof
US20050020071A1 (en) Method and apparatus for cleaning and method and apparatus for etching
CN105121341B (zh) 用于制备八氯三硅烷的方法和装置
US20050142046A1 (en) Method and apparatus for chemical synthesis
US8282902B2 (en) Apparatus for producing trichlorosilane, and method for producing trichlorosilane
JPS6063375A (ja) 気相法堆積膜製造装置
CN106676498B (zh) 一种化学气相沉积系统
US5478453A (en) Process for preparing disilane from monosilane by electric discharge and cryogenic trapping
US7585480B2 (en) Highly pure ultra-fine SiOx powder and method for production thereof
WO2010042237A3 (en) Method and apparatus for simplified startup of chemical vapor deposition of polysilicon
CN103328381B (zh) 用于将四氯化硅转化为三氯硅烷的方法及装置
CN114901865B (zh) 用于沉积二维的层的cvd反应器的应用
EP0539050A1 (en) Chemical vapor deposition of diamond
KR101395249B1 (ko) 다결정 실리콘 생성 방법
WO1985004389A1 (en) Process for the hydrogenation of silicon tetrachloride
Huang et al. Methane dimerization via microwave plasmas
EP0334791A1 (en) Process for the preparation of silicon nitride
CN102011101A (zh) 金刚石薄膜的生长装置
CN213624376U (zh) 一种化学气相沉积装置
NO306056B1 (no) Fremgangsmåte til fremstilling av et produktpulver omfattende en karbidforbindelse
US20170312724A1 (en) Fluidized bed reactor and process for producing polycrystalline silicon granules
JPH02259074A (ja) Ｃｖｄ方法および装置